Patent application number | Description | Published |
20090278166 | SEMICONDUCTOR DEVICE - A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region. | 11-12-2009 |
20100276729 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF TRENCH GATE - IGBT 10 comprises an n | 11-04-2010 |
20110001553 | METHOD OF DRIVING REVERSE CONDUCTING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE - A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased. | 01-06-2011 |
20110297934 | SEMICONDUCTOR DEVICE - A reverse conducting semiconductor device having an IGBT element region and a diode element region in one semiconductor substrate is provided. An electric current detection region is arranged adjacent to the IGBT element region, and a collector region of the IGBT element region is extended to connect with a collector region of the electric current detection region. Instability in the IGBT detection current caused by a boundary portion between the IGBT and the diode can be suppressed. In the same way, an electric current detection region is arranged adjacent to the diode element region, and a cathode region of the diode element region is extended to connect with a cathode region of the electric current detection region. Instability in the diode detection current caused by the boundary portion between the IGBT and the diode can be suppressed. | 12-08-2011 |
20120007141 | SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR SUBSTRATE INCLUDING DIODE REGION AND IGBT REGION - A semiconductor device, including a semiconductor substrate in which a diode region and an IGBT region are formed, is provided. A lifetime control region is formed within a diode drift region. The diode drift region and the IGBT drift region are a continuous region across a boundary region between the diode region and the IGBT region. A first separation region and a second separation region are formed within the boundary region. The first separation region is formed of a p-type semiconductor, formed in a range extending from an upper surface of the semiconductor substrate to a position deeper than both of a lower end of an anode region and a lower end of a body region, and bordering with the anode region. The second separation region is formed of a p-type semiconductor, formed in a range extending from the upper surface of the semiconductor substrate to a position deeper than both of the lower end of the anode region and the lower end of the body region, and bordering with the body region. The second separation region is separated from the first separation region. | 01-12-2012 |
20120007142 | SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR SUBSTRATE INCLUDING DIODE REGION AND IGBT REGION - Provided is a semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed. A separation region formed of a p-type semiconductor is formed in a range between the diode region and the IGBT region and extending from an upper surface of the semiconductor substrate to a position deeper than both a lower end of an anode region and a lower end of a body region. A diode lifetime control region is formed within a diode drift region. A carrier lifetime in the diode lifetime control region is shorter than that in the diode drift region outside the diode lifetime control region. An end of the diode lifetime control region on an IGBT region side is located right below the separation region. | 01-12-2012 |
20120043582 | SEMICONDUCTOR DEVICE HAVING BOTH IGBT AREA AND DIODE AREA - There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted. | 02-23-2012 |
20120080718 | SEMICONDUCTOR DEVICE - The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element region are formed in one semiconductor substrate. The boundary region comprises a second conductivity type first diffusion region, a first conductivity type second diffusion region, and a second conductivity type third diffusion region. A first drift region of the IGBT element region contiguously contacts the first diffusion region of the boundary region, and a second drift region of the diode element region contiguously contacts the first diffusion region of the boundary region. A first body region of the IGBT element region contiguously contacts the second diffusion region of the boundary region, and a second body region of the diode element region contiguously contacts the second diffusion region of the boundary region. | 04-05-2012 |
20130001639 | SEMICONDUCTOR DEVICE COMPRISING SEMICONDUCTOR SUBSTRATE HAVING DIODE REGION AND IGBT REGION - A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region. | 01-03-2013 |
20130009206 | SEMICONDUCTOR DEVICE - In a semiconductor device in which a diode and an IGBT are formed in a main region of a same semiconductor substrate, in order to obtain a sufficiently large sense IGBT current in a stable manner, a sense region is provided with a first region in which a distance from an end of a main cathode region on a side of the sense region in a plan view of the semiconductor substrate is equal to or longer than 615 μm. Alternatively, in order to obtain a sufficiently large sense diode current in a stable manner, the sense region is provided with a second region in which a distance from the main cathode region in a plan view of the semiconductor substrate is equal to or shorter than 298 μm. The sense region may be provided with both the first region and the second region. | 01-10-2013 |
20140077253 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a drift layer formed in a semiconductor substrate, and a body layer formed at an upper surface of the semiconductor substrate and located on an upper surface side of the drift layer. The drift layer includes a lifetime control region having a crystal defect density that is equal to or higher than h/2, where h is a maximum value of a crystal defect density of the drift layer that varies in a depth direction of the semiconductor substrate. The lifetime control region is formed by irradiating charged particles to a first conductivity type pre-drift layer including a first resistance layer and a second resistance layer, a resistivity of the second resistance layer being lower than a resistivity of the first resistance layer. At least of a part of the lifetime control region is formed in a range of the second resistance layer. | 03-20-2014 |
20140217465 | SEMICONDUCTOR DEVICE - A semiconductor device in which a diode region and an IGBT region are formed on a same semiconductor substrate is provided. The diode region includes a plurality of first conductivity type anode layers exposed to a surface of the semiconductor substrate and separated from each other. The IGBT region includes a plurality of first conductivity type body contact layers that are exposed to the surface of the semiconductor substrate and separated from each other. The anode layer includes at least one or more of the first anode layers. The first anode layer is formed in a position in the proximity of at least IGBT region, and an area of a plane direction of the semiconductor substrate in each of the first anode layers is larger than the area of a plane direction of the semiconductor substrate in the body contact layer in the closest proximity of the diode region. | 08-07-2014 |
20140231827 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed. | 08-21-2014 |
20140346592 | SEMICONDUCTOR DEVICE - A vertical MOSFET includes: a semiconductor substrate comprising a drain layer, a drift layer, a body layer, and a source layer; and a trench gate penetrating through the source layer and the body layer from an upper surface of the semiconductor substrate and reaching the drift layer. The trench gate includes a gate electrode; a first insulating film disposed on a bottom surface of a trench formed in the semiconductor substrate; a second insulating film disposed at least on a side surface of the trench, and in contact with the body layer; and a third insulating film disposed between the gate electrode and the second insulating film, and formed of a material of which dielectric constant is higher than a dielectric constant of the second insulating film. | 11-27-2014 |
20150041887 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer surrounding a bottom of the trench gate, a second semiconductor layer disposed along one of end portions of the trench gate in a longitudinal direction of the trench gate, one of end portions of the second semiconductor layer contacting the body layer and the other of the end portions of the second semiconductor layer contacting the first semiconductor layer, and a connecting layer, one of end portions of the connecting layer being connected to the body layer and the other of the end portions of the connecting layer being connected to the first semiconductor layer, the connecting layer contacting the second semiconductor layer, and the connecting layer being separated from the one of the end portions of the trench gate in the longitudinal direction of the trench gate by the second semiconductor layer. | 02-12-2015 |
Patent application number | Description | Published |
20090034115 | MAGNETIC RECORDING MEDIUM, RECORDING /REPRODUCING APPARATUS, AND STAMPER - A servo pattern is formed in a servo pattern region on at least one surface of a substrate of a magnetic recording medium by a concave/convex pattern including a plurality of convex parts, at least protruding end parts of which are formed of magnetic material, and at least one concave part. The servo pattern region includes an address pattern region and a burst pattern region. The at least one concave part is formed in the servo pattern region so that a larger of an inscribed circle with a largest diameter out of inscribed circles on protruding end surfaces of the convex parts formed in the address pattern region and an inscribed circle with a largest diameter out of inscribed circles on protruding end surfaces of the convex parts formed in the burst pattern region is an inscribed circle with a largest diameter out of inscribed circles on protruding end surfaces of the convex parts formed in the servo pattern region. | 02-05-2009 |
20090059409 | Magnetic recording reproducing apparatus - The magnetic recording and reproducing apparatus includes: a perpendicular recording magnetic recording medium including a track pattern including track portions and gap portions arranged so as to be alternately adjacent to each other in a cross-track direction, at least part of portions corresponding to the track portions being recording areas having the width substantially the same as the width of the track portions, portions between the recording areas being non-recording areas; and a magnetic head of a perpendicular recording type for applying a recording magnetic field to the recording areas. The anisotropic magnetic field Hk (T) of the recording areas of the magnetic recording medium and the recording magnetic field intensity Fw (t) of the recording magnetic field at the upper surface of the recording areas satisfy the following inequality (I): | 03-05-2009 |
20090168245 | INFORMATION RECORDING MEDIUM, RECORDING/REPRODUCING APPARATUS, AND STAMPER - Data track patterns and servo patterns are formed on an information recording medium by concave/convex patterns divided into ring-shaped regions that are concentric with the data track patterns. In the servo patterns, a unit convex length and a unit concave length along the direction of rotation increase in each ring-shaped region from an inside to an outside of the ring-shaped region in proportion to the distance from the center of the data track patterns and a value produced by dividing an average unit convex (or concave) length inside each ring-shaped region by a distance from the center to the ring-shaped region decreases toward the outer periphery of the medium. The ring-shaped regions include plural first regions between an innermost region and an outermost region. Respective lengths along a radial direction of the first regions increase toward an outer periphery of the medium. | 07-02-2009 |
20090185308 | MAGNETIC RECORDING MEDIUM, RECORDING REPRODUCING APPARATUS, AND STAMPER - On a magnetic recording medium, M sets of burst patterns are formed along a direction of rotation of a substrate in each burst pattern region, where M is a natural number of two or higher. Each burst pattern is formed so as to include two types of burst signal units that are positioned at different distances from a center of data track patterns and have an equal length along a radial direction of the substrate. The length along the radial direction is (2·M/N) times the track pitch, where N is a natural number of two or higher. In a predetermined range where both ends in the radial direction do not match a center in the radial direction of a burst pattern, (2·M) centers in the radial direction of the burst patterns are present at intervals of (1/N) times the track pitch in the radial direction, the two types of burst signal units are formed of recording regions and do not overlap each other in the direction of rotation, centers of the burst signal units in the radial direction are separated by (M/N) times the track pitch, and facing end parts in the radial direction of the burst signal units are separated via non-recording regions. | 07-23-2009 |
20090207522 | MAGNETIC RECORDING MEDIUM, RECORDING/REPRODUCING APPARATUS, AND STAMPER - On a magnetic recording medium, M sets of burst patterns are formed along a direction of rotation of a substrate in each burst pattern region, where M is a natural number of two or higher. Each burst pattern is formed so as to include two types of burst signal units that are positioned at different distances from a center of data track patterns and have an equal length along a radial direction of the substrate. The length along the radial direction is (2·M/N) times the track pitch, where N is a natural number of two or higher. In a predetermined range where both ends in the radial direction do not match a center in the radial direction of a burst pattern, (2·M) centers in the radial direction of the burst patterns are present at intervals of (1/N) times the track pitch in the radial direction, the two types of burst signal units are formed of non-recording regions and do not overlap each other in the direction of rotation, centers of the burst signal units in the radial direction are separated by (M/N) times the track pitch, and facing end parts in the radial direction of the burst signal units are separated via recording regions. | 08-20-2009 |
20090231746 | Magnetic recording apparatus and magnetic recording medium - In the magnetic recording apparatus, a recording layer is formed in a concavo-convex pattern, and recording elements are formed of convex portions of the concavo-convex pattern. Furthermore, the following equation (I) | 09-17-2009 |
20120230167 | MICROWAVE ASSISTED MAGNETIC HEAD AND MAGNETIC DISK DEVICE - A microwave assisted magnetic head of the present invention includes: at least two or more auxiliary coils that are arranged in a periphery of a writing main pole; and microwave current supply means that applies microwave currents to the at least two or more auxiliary coils. The at least two or more auxiliary coils respectively include linear body parts linearly arranged on an ABS side, two of the linear body parts of the at least two or more auxiliary coils are arranged in a substantially orthogonal positional relationship, and the microwave current supply means is configured such that the microwave current supply means changes phase differences of the microwave currents applied respectively to the at least two or more auxiliary coils. Therefore, the microwave current can be easily controlled, and thus, a circularly polarized magnetic field with high magnetization inversion efficiency can be generated as an assistance magnetic field. | 09-13-2012 |
20120250472 | MAGNETIC HEAD FOR MICROWAVE ASSISTED MAGNETIC RECORDING - A magnetic head that writes information to a recording medium includes a magnetic pole layer that generates a writing magnetic field to the recording medium, a microstripline that is disposed in proximity to the magnetic pole layer and to which high frequency current is applied, and a ferromagnetic thin film that is disposed on a portion of the microstripline that faces the recording medium, and that generates a high frequency alternate-current (AC) magnetic field to be applied to the recording medium, using a current magnetic field generated on the microstripline due to the high frequency current. | 10-04-2012 |
20120320474 | MICROWAVE ASSISTED MAGNETIC RECORDING HEAD AND MAGNETIC RECORDING METHOD THEREWITH - A microwave assisted magnetic head includes a main magnetic pole; a trailing shield, a main coil for causing the main magnetic pole to generate a perpendicular recording field, at least one secondary coil for generating an in-plane alternate-current (AC) magnetic field with a frequency in a microwave band from a magnetic recording gap between the main magnetic pole and the trailing shield, nonmagnetic films formed on magnetic recording gap facing surfaces that are defined by the main magnetic pole and the trailing shield, the main magnetic pole and the trailing shield being configured with first soil magnetic films, and second soft magnetic films formed further on the surfaces of the nonmagnetic films. The second soft magnetic films have larger anisotropy fields than the first soft magnetic films have. | 12-20-2012 |
20130083428 | MAGNETIC RECORDING APPARATUS - A magnetic recording apparatus includes a magnetic recording medium that is provided with a first magnetic layer with magneto crystalline anisotropy energy, a second magnetic layer with magneto crystalline anisotropy energy that is smaller than the magneto crystalline anisotropy energy of the first magnetic layer, and a nonmagnetic metal layer that is positioned between the first magnetic layer and the second magnetic layer and that provides coupling force between the first magnetic layer and the second magnetic layer; and a magnetic head that includes a main pole that applies a recording magnetic field in a direction perpendicular to a film surface of the magnetic recording medium to the magnetic recording medium, and an alternate current (AC) magnetic field generator that applies an AC magnetic field with a frequency of 1-40 GHz to the magnetic recording medium. | 04-04-2013 |
20130128382 | SUSPENSION WITH HIGH CONDUCTIVITY GROUND LAYER - A suspension is configured to support a magnetic head slider having a recording head element for recording to a magnetic recording medium and a microwave generating element that applies a high-frequency magnetic field to the magnetic recording medium when recording to the magnetic recording medium is conducted by the recording head element. The suspension includes a flexure that supports the magnetic head slider, and a microwave signal transmission line and a recording signal transmission line that are supported by the flexure. The microwave signal transmission line is connected to the microwave generating element and configured to transmit microwave signals for generating the high-frequency magnetic field, the recording signal transmission line being connected to the recording head element and configured to transmit recording signals. The flexure has a main body part, a support part for the magnetic head slider, and a pair of arm parts that links the main body part and the support part. The recording signal transmission line is supported between the main body part and the support part by a separate support part separated from the flexure, the microwave signal transmission line is supported between the main body part and the support part by at least one of the pair of arm parts, and a portion of the one of the arm parts that supports the microwave signal transmission line has a lamination structure in which an insulating layer that supports the microwave signal transmission line on one surface and a substrate whose portion opposing the other surface of the insulating layer has conductivity are laminated. | 05-23-2013 |
20130128387 | SUSPENSION WITH HIGH CONDUCTIVITY GROUND LAYER - A suspension is configured to support a magnetic head slider having a recording head element for recording data signals to a magnetic recording medium and a microwave generating element that applies a high-frequency magnetic field to the magnetic recording medium when recording is conducted by the recording head element. The suspension includes a flexure that supports the magnetic head slider and a microwave signal transmission line. The microwave signal transmission line is connected to the microwave generating element and configured to transmit microwave signals for generating the high-frequency magnetic field. A portion that supports the microwave signal transmission line of the flexure includes a lamination structure, a ground layer with the thickness of 0.1 μm or greater and less than 2 μm and having higher conductivity than that of the flexure main plate, and an insulating layer that supports the microwave signal transmission line. | 05-23-2013 |
20130128388 | SUSPENSION WITH HIGH CONDUCTIVITY GROUND LAYER - A suspension is configured to support a magnetic head slider having a recording head element for recording to a magnetic recording medium and a microwave generating element that applies a high-frequency magnetic field to the magnetic recording medium when recording is conducted by the recording head element. The suspension has a flexure that supports the magnetic head slider, a microwave signal transmission line and a recording signal transmission line. The microwave signal transmission line is connected to the microwave generating element and configured to transmit microwave signals for generating the high-frequency magnetic field. The microwave signal transmission line and the recording signal transmission line are supported between the main body part and the support part, a portion of which has a first lamination structure where a first ground layer is conductive and a first insulating layer supports the microwave signal transmission. | 05-23-2013 |
20130242430 | MAGNETIC RECORDING MEDIUM, METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING OR REPRODUCING APPARATUS - Ion irradiation is applied to the surface of a recording layer which has a granular structure containing ferromagnetic particles which are composed of an L10 ordered alloy and a non-magnetic intergranular layer, thereby the ferromagnetic particles in the side of the substrate are transformed into an L10 ordered alloy having a high magnetic anisotropy, and the ferromagnetic particles in the side of the surface of the medium are transformed into an A1 disordered alloy having a low magnetic anisotropy. | 09-19-2013 |
20130258514 | MICROWAVE-ASSISTED MAGNETIC RECORDING DEVICE AND METHOD USING NON-CONSTANT MICROWAVE - A magnetic recording device includes a magnetic disk and a magnetic head that performs magnetic recording to the magnetic disk. The magnetic head includes a main magnetic pole layer and a microwave generating element. The magnetic recording device further includes a microwave generating element driving current control circuit. The microwave generating element driving current control circuit, during the magnetic recording, applies a microwave generating element driving current at a first current level to the microwave generating element for a period that is from at the latest a polarity reversal of the recording current before a subsequent polarity reversal of the recording voltage, and thereafter applies another microwave generating element driving current at a second current level, which is smaller than the first current level, to the microwave generating element, or stops the application of the another microwave generating element driving current until the polarity reversal of the recording voltage. | 10-03-2013 |
20130258527 | MAGNETIC HEAD AND MAGNETIC RECORDING APPARATUS - A magnetic head includes a microwave-generating element connected to a ground line. The ground line is made shorter by connecting the ground line to a conductive slider substrate so that the microwave-generating element is in a short-circuited end condition. This allows a microwave excitation current to be efficiently supplied to the microwave-generating-element, thus enabling effective microwave-assisted recording. | 10-03-2013 |