Patent application number | Description | Published |
20080265261 | PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL - Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer. | 10-30-2008 |
20100314628 | PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL - Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer. | 12-16-2010 |
20110095646 | DEVICE FOR CONVERTING THERMAL POWER INTO ELECTRICITY - A device for converting thermal power into electric power including a plurality of bimetallic strips disposed between a rigid support and a plate of a resilient plastic material; and on the side of the plate of a resilient plastic material opposite to the strips, a layer of a piezoelectric material connected to output terminals, wherein the rigid support is capable of being in contact with a hot source, and the plate of a resilient plastic material is capable of transmitting to the piezoelectric layer the mechanical stress due to the deformations of the bimetallic strips. | 04-28-2011 |
20110095655 | THERMOELECTRIC GENERATOR - A thermoelectric generator including, between first and second walls delimiting a tightly closed space, a layer of a piezoelectric material connected to output terminals; a plurality of openings crossing the piezoelectric layer and emerging into first and second cavities close to the first and second walls; and in the tight space, drops of a liquid, the first wall being capable of being in contact with a hot source having a temperature greater than the evaporation temperature of the liquid and the second wall being capable of being in contact with a cold source having a temperature smaller than the evaporation temperature of the liquid. | 04-28-2011 |
20110108892 | DETECTOR OF BIOLOGICAL OR CHEMICAL MATERIAL AND CORRESPONDING ARRAY OF DETECTORS - A detector of biological or chemical material, including a MOS transistor having its channel region inserted between upper and lower insulated gates, the upper insulated gate including a detection layer capable of generating a charge at the interface of the upper insulated gate and of its gate insulator, the thickness of the upper gate insulator being smaller than the thickness of the lower gate insulator. | 05-12-2011 |
20110230020 | SCHOTTKY-BARRIER MOS TRANSISTOR ON A FULLY-DEPLETED SEMICONDUCTOR FILM AND PROCESS FOR FABRICATING SUCH A TRANSISTOR - This process for manufacturing a Schottky-barrier MOS transistor on a fully depleted semiconductor film may include depositing a first layer of a first sacrificial material on an active zone of the substrate, forming a silicon layer on top of the first layer of sacrificial material, forming a gate region on top of the silicon layer with interposition of a gate oxide layer, and selective etching of the sacrificial material so as to form a tunnel beneath the gate region. The tunnel is filled with a dielectric second sacrificial material. A controlled lateral etching of the second sacrificial material is performed so as to keep behind a zone of dielectric material beneath the gate region. Silicidation is performed at the location of the source region and drain region and at the location of the etched zone. | 09-22-2011 |
20120017962 | PROCESS FOR GENERATING ELECTRICAL ENERGY IN A SEMICONDUCTOR DEVICE AND THE CORRESPONDING DEVICE - Electrical energy is generated in a device that includes an integrated circuit which produces thermal flux when operated. A substrate supports the integrated circuit. A structure is formed in the substrate, that structure having a semiconductor p-n junction thermally coupled to the integrated circuit. Responsive to the thermal flux produced by the integrated circuit, the structure generates electrical energy. The generated electrical energy may be stored for use by the integrated circuit. | 01-26-2012 |
20150015112 | THERMO-MECHANO-ELECTRICAL CONVERTER - A thermo-mechano-electric converter including a plurality of shape memory bistable elements embedded in a resilient material intimately associated with a piezoelectric material. | 01-15-2015 |
20150042205 | DEVICE FOR CONVERTING THERMAL POWER INTO ELECTRIC POWER - A device for converting thermal power into electric power includes many conversion cells arranged inside and on top of a substrate. Each conversion cell includes a curved bimetal strip and first and second diodes coupled to the bimetal strip. The diodes are arranged in a semiconductor region of the substrate. | 02-12-2015 |
Patent application number | Description | Published |
20090152998 | MICRORESONATOR - A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening. | 06-18-2009 |
20100295416 | MICRORESONATOR - A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening. | 11-25-2010 |
20110115237 | THERMOELECTRIC GENERATOR - A thermoelectric generator including a membrane maintained by lateral ends and capable of taking a first shape when its temperature reaches a first threshold and a second shape when its temperature reaches a second threshold greater than the first threshold; at least one electrically conductive element attached to with the membrane and connecting the lateral ends of the membrane; and circuitry capable of generating, at the level of the membrane, a magnetic field orthogonal to the membrane displacement direction, the lateral ends of the membrane being connected to output terminals of the generator. | 05-19-2011 |
20110121391 | METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR - A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring. | 05-26-2011 |
20120228992 | THERMOELECTRIC GENERATOR - A thermoelectric generator including a sheet of a deformable material containing closed cavities, each of which contains a drop of a vaporizable liquid, and a mechanism for transforming into electricity the power resulting from the deformation of the sheet linked to the evaporation/condensation of the liquid. | 09-13-2012 |
20130180562 | TUNNEL-EFFECT POWER CONVERTER - A tunnel-effect power converter including first and second electrodes having opposite surfaces, wherein the first electrode includes protrusions extending towards the second electrode. | 07-18-2013 |
20130257219 | ENERGY HARVESTING DEVICE - An energy harvester including first and second sheets; and a plurality of walls, each wall being sandwiched between the first and second sheets and surrounding a cavity, wherein each cavity houses at least one curved plate adapted to change from a first shape to a second shape when its temperature reaches a first threshold and to return to the first shape when its temperature falls to a second threshold lower than said first threshold. | 10-03-2013 |
20130280549 | CURVED PLATE AND METHOD OF FORMING THE SAME - A method of forming at least one curved plate having first and second layers, the first layer being formed of a first material and the second layer being formed of a second material, the method including forming one or more blocks of a fusible material on a surface of a substrate; baking the one or more blocks to deform their shape; and depositing the first and second materials over the one or more deformed blocks to form the first and second layers. | 10-24-2013 |
20130292952 | DEVICE FOR CONVERTING THERMAL ENERGY INTO ELECTRIC ENERGY IN THE PRESENCE OF A HOT SOURCE - A device for converting thermal energy into electric energy intended to be used in combination with a hot source including: a capacitor of variable capacitance, including two electrodes separated by an electrically-insulating material, one of these electrodes being deformable and being associated with an element forming a bimetallic strip, said bimetallic strip including at least two layers of materials having different thermal expansion coefficients, said bimetallic strip being free to deform when it is submitted to the heat of said hot source; a second capacitor having a first electrode connected to a first electrode of said capacitor of variable capacitance; a harvesting circuit electrically connected between the second electrode of the capacitor of variable capacitance and the second electrode of the second capacitor, said harvesting circuit being capable of conducting the current flowing between said second electrodes. | 11-07-2013 |
20140070317 | METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR - A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring. | 03-13-2014 |
20150022054 | THERMAL ENERGY HARVESTING OPTIMISATION WITH BISTABLE ELEMENTS AND COLLABORATIVE BEHAVIOR - System for converting thermal energy into electrical energy (S | 01-22-2015 |