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Sirard
Jean-Claude Sirard, Lille FR
| Patent application number | Description | Published |
|---|---|---|
| 20110110962 | Novel Immunoadjuvant Flagellin-Based Compounds and Use Thereof - The present invention relates to novel peptide compounds derived from flagellin originating from | 05-12-2011 |
Marc-Andre Sirard, Breakeyville CA
| Patent application number | Description | Published |
|---|---|---|
| 20100021898 | MAMMALIAN OOCYTE DEVELOPMENT COMPETENCY GRANULOSA MARKERS AND USES THEREOF - The present invention relates to the competence of oocytes for uterine implantation and development into living individuals. The invention more particularly relates to markers that are detected and measured in granulosa cells collected along with the oocytes during oocyte aspiration as it is done in assisted reproduction techniques. Markers include cytochrome P450 aromatase (CYP19A1), cell division cycle 42 (CDC42), 3-β-hydroxysteroid dehydrogenase 1 (3βHSD1), serpm peptidase inhibitor clade E member 2 (SERPINE 2), and adrenodoxm (ADX) that are detected and measured, using RT-PCR. | 01-28-2010 |
| 20120164636 | MAMMALIAN OOCYTE DEVELOPMENT COMPETENCY GRANULOSA MARKERS AND USES THEREOF - The present invention relates to the competence of oocytes to uterine implantation and development into living individual. The invention more particularly relates to marker that are detected and measured in granulosa cells collected along with the oocytes during oocyte aspiration as it is done in assisted reproduction techniques. | 06-28-2012 |
Marc-André Sirard, Quebec CA
| Patent application number | Description | Published |
|---|---|---|
| 20120283125 | Ovarian Markers of Oocyte Competency and Uses Thereof - The present invention relates to the competence of oocytes to fertilization, uterine implantation and development into a living being. The invention describes ovarian markers whose expression is predicative of oocyte competency that are detected and/or measured in follicular fluid, cumulus cells and/or follicular cells of a mammal. Also described are methods for evaluating competence of mammalian oocytes, methods for selecting a mammalian oocyte for assisted reproduction (AR), and screening methods for identifying stimulatory or inhibitory compounds to mammalian oocyte competence. | 11-08-2012 |
Pierre Sirard, St. Jean Sur Richelieu CA
| Patent application number | Description | Published |
|---|---|---|
| 20100076191 | PROCESS FOR PREPARING TRIAZOLE SUBSTITUTED AZAINDOLEOXOACETIC PIPERAZINE DERIVATIVES AND NOVEL SALT FORMS PRODUCED THEREIN - A process is provided for preparing triazole substituted azaindoleoxoacetic piperazine derivative. Novel intermediates produced in the above process, and novel N-1 and amorphous forms of a 1,2,3-triazole substituted azaindoloxoacetic piperazine derivatives and processes for producing such novel forms are also provided. | 03-25-2010 |
| 20100210599 | PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 08-19-2010 |
| 20120238755 | SALTS OF PRODRUGS OF PIPERAZINE AND SUBSTITUTED PIPERIDINE ANTIVIRAL AGENTS - This invention provides for prodrug Compounds I, pharmaceutical compositions thereof, and their use in treating HIV infection. | 09-20-2012 |
Stephen Sirard, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090068767 | TUNING VIA FACET WITH MINIMAL RIE LAG - A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained. | 03-12-2009 |
Stephen M. Sirard, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100248485 | METHOD FOR DIELECTRIC MATERIAL REMOVAL BETWEEN CONDUCTIVE LINES - A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts. | 09-30-2010 |
| 20100285671 | STRIP WITH REDUCED LOW-K DIELECTRIC DAMAGE - A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas. | 11-11-2010 |
| 20110097821 | METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE - A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R) | 04-28-2011 |
| 20110097904 | METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE - A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH | 04-28-2011 |
Stephen M. Sirard, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100261352 | METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE - A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped. | 10-14-2010 |
| 20110244600 | METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE - A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R) | 10-06-2011 |