Sima
Sima Alikhanzadeh-Arani, Tehran IR
Patent application number | Description | Published |
---|---|---|
20120115731 | METHOD FOR PREPARING YTTRIUM BARIUM COPPER OXIDE (YBCO) SUPERCONDUCTING NANOPARTICLES - A method for preparing yttrium barium copper oxide (“YBCO”; “Y-123”; YBa | 05-10-2012 |
Sima Asvadi, Eindhoven AU
Patent application number | Description | Published |
---|---|---|
20090018622 | BODY COVER, GLASSES AND/OR AT LEAST PARTIAL HEAD COVER, METHOD FOR RADIATING AT LEAST PART OF A HUMAN BODY AND USE OF A BODY COVER - Body cover, comprising a substrate, for covering at least part of a human body, and at least one electroluminescent source coupled to the substrate, for illuminating at least a part of the body, wherein the cover is configured to at least partly surround at least a part of the body and/or a body support. Method for radiating at least part of a human body, especially in the treatment of jaundice and/or crigler najjar, comprising covering at least part of the body and/or a body support with a cover with at least one electroluminescent source and emitting light from the electroluminescent source to at least part of the body. | 01-15-2009 |
Sima Barhoom, Hod Hasharon IL
Patent application number | Description | Published |
---|---|---|
20130122491 | SYSTEMS AND METHODS FOR DETECTION OF CELLULAR STRESS - There are provided methods for detection and measurement of stress in a cell, the method including introducing a labeled tRNA into the cell and detecting a change in subcellular localization of the labeled tRNA in the cell, based on the signal emitted from the labeled tRNA. There are further provided methods and systems for the generation of a stress index of a living cell. There are further provided methods and systems for detection of stress in a living cell, comprising detection of changes in subcellular localization of labeled tRNA in a cell, wherein the detection is performed in real time. | 05-16-2013 |
Sima Dimitrijev, Shailer Park AU
Patent application number | Description | Published |
---|---|---|
20100149852 | CHARGE RETENTION STRUCTURES AND TECHNIQUES FOR IMPLEMENTING CHARGE CONTROLLED RESISTORS IN MEMORY CELLS AND ARRAYS OF MEMORY - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, memory cells and arrays, and methods to use silicon carbide structures to retain amounts of charge indicative of a resistive state in, for example, a charge-controlled resistor of a memory cell. In some embodiments, a memory cell comprises a silicon carbide structure including a charge reservoir configured to store an amount of charge carriers constituting a charge cloud. The amount of charge carriers in the charge cloud can represent a data value. Further, the memory cell includes a resistive element in communication with the charge reservoir and is configured to provide a resistance as a function of the amount of charge carriers in the charge reservoir. The charge reservoir is configured to modulate the size of the charge cloud to change the data value. | 06-17-2010 |
20110042685 | SUBSTRATES AND METHODS OF FABRICATING EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including epitaxial layers, by supplying sources of silicon and carbon with sequential emphasis. In at least some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer on a substrate in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source, and purging other gaseous materials subsequent to converting the layer. The presence of the silicon source can be independent of the presence of the carbon source. In some embodiments, dopants, such as n-type dopants, can be introduced during the formation of the epitaxial layer of silicon carbide. | 02-24-2011 |
20110042686 | SUBSTRATES AND METHODS OF FABRICATING DOPED EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including doped epitaxial layers (e.g., P-doped silicon carbide epitaxial layers), by supplying sources of silicon and carbon with sequential emphasis. In some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source and a dopant, and purging other gaseous materials. In some embodiments, the presence of the silicon source can be independent of the presence of the carbon source and/or the dopant. | 02-24-2011 |
20110272707 | SUBSTRATES AND METHODS OF FORMING FILM STRUCTURES TO FACILITATE SILICON CARBIDE EPITAXY - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form film structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate. In some embodiments, a method of preparing a substrate for silicon carbide epitaxial layer formation can include forming an ultrathin layer of oxide that is configured to inhibit contaminants from interacting with a silicon-based substrate. Further, the method can include forming a carbonized film on the silicon-based substrate that is configured to inhibit contaminants from interacting with the silicon-based substrate. The carbonized film can be configured to be transitory as fabrication parameters are modified to form an epitaxial layer of silicon carbide. | 11-10-2011 |
20120056194 | BARRIER STRUCTURES AND METHODS OF FORMING SAME TO FACILITATE SILICON CARBIDE EPITAXY AND SILICON CARBIDE-BASED MEMORY FABRICATION - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form barrier structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate, for fabricating various silicon carbide-based semiconductor devices, including silicon carbide-based memory elements and cells. In some embodiments, a semiconductor wafer includes a silicon substrate, a barrier-seed layer disposed over the silicon substrate, and a silicon carbide layer formed over the barrier-seed layer. The semiconductor wafer can be used to form a variety of SiC-based semiconductor devices. In one embodiment, a silicon carbide-based memory element is formed to include barrier-seed layer, multiple silicon carbide layers formed over the barrier-seed layer, and a dielectric layer formed over the multiple silicon carbide layers. | 03-08-2012 |
Sima Mirilashvili, Lod IL
Patent application number | Description | Published |
---|---|---|
20100056528 | SULFONAMIDE DERIVATIVES WITH THERAPEUTIC INDICATIONS - The invention provides sulfonamide compounds of formula (I) as defined herein, pharmaceutical compositions containing the same and methods of treatment using such compounds and pharmaceutical compositions. These compounds have a common wide range of beneficial therapeutic indications, in particular as analgesic and anti-inflammatory agents. | 03-04-2010 |
20120108631 | Sulfonamides for the Modulation of PKM2 - The invention relates to sulfonamide compounds and methods for activating PKM2. The compounds and methods are useful in treating or preventing a disease or disorder selected from cancer, cell proliferative disorder, inflammatory disorder, metabolic disorder, and immune system disorder. | 05-03-2012 |
20120316148 | Compositions and Methods for Modulating a Kinase - The invention relates to compounds and methods for modulating one or more components of a kinase signaling cascade. | 12-13-2012 |
Sima Mottale, Castagnola CH
Patent application number | Description | Published |
---|---|---|
20150360777 | Multi-Task Frisbee-Umbrella - The present invention discloses an unmanned aerial vehicle capable of transforming its shape, comprising | 12-17-2015 |
Sima Noghanian, Edmonton CA
Patent application number | Description | Published |
---|---|---|
20090077668 | NETWORK SECURITY DEVICES AND METHODS - An OSI layer 2 network device on the edge of a network such as a SAN is configured to replace the original source address of traffic entering the network with a known identifier or address, which is used to signify that entry point as the traffic source to the other nodes of the network. Nodes of the network recognize the new source address as a valid source address. The network device also maintains state (e.g., association of original source address with new source address/identifier) so as to translate addresses to enable reply traffic to be sent back to the original sender. | 03-19-2009 |
Sima Ronasi, North Vancouver CA
Patent application number | Description | Published |
---|---|---|
20140030625 | VOLTAGE REVERSAL TOLERANT FUEL CELL WITH SELECTIVELY CONDUCTING ANODE - Use of a selectively conducting anode component in solid polymer electrolyte fuel cells can reduce the degradation associated with repeated startup and shutdown, but unfortunately can also adversely affect a cell's tolerance to voltage reversal. Use of a carbon sublayer in such cells can improve the tolerance to voltage reversal, but can adversely affect cell performance. However, employing an appropriate selection of selectively conducting material and carbon sublayer, in which the carbon sublayer is in contact with the side of the anode opposite the solid polymer electrolyte, can provide for cells that exhibit acceptable behaviour in every regard. A suitable selectively conducting material comprises platinum deposited on tin oxide. | 01-30-2014 |
Sima Singh, Phagwara IN
Patent application number | Description | Published |
---|---|---|
20140154312 | ORAL TARGETTED DRUG DELIVERY SYSTEM - The present invention discloses an “Improved Oral Targetted Drug Delivery System (O-TDDS)” particularly suited for delivery of drugs having activity against the diseases located in the colon e.g. colon cancer, ulcerative colitis, protozoal infections etc. The system comprises two elements or parts viz. microspheres (drug+natural polymers such as guar gum or xanthan gum) and probiotics. Both the elements are packed together in a single, pharmaceutically acceptable oral dosage form such as a capsule. The system offers distinct advantages of drug delivery without undesirable side-effects of diarrhea, nausea or vomiting commonly encountered in case of anti-cancer drugs such as 5-Fluorouracil. | 06-05-2014 |
Sima Tarashioon, Delft NL
Patent application number | Description | Published |
---|---|---|
20110123052 | MICROPHONE - A microphone and a method for manufacturing the same. The microphones includes a substrate die; and a microphone and an accelerometer formed from the substrate die. The accelerometer is adapted to provide a signal for compensating mechanical vibrations of the substrate die. | 05-26-2011 |
Sima Tessema, Washington, DC US
Patent application number | Description | Published |
---|---|---|
20140199665 | FOOD SELECTION SYSTEM AND METHOD OF USING THE SAME - A food selection system which includes a housing have at least one storage compartment and a plurality of air vents and an aroma creation device to create an aroma stored within at least one storage compartment, wherein an exterior surface of the housing resembles a food item, and the plurality of air vents connect the at least one storage compartment to the exterior surface. | 07-17-2014 |