Patent application number | Description | Published |
20130043541 | LOW POWER/HIGH SPEED TSV INTERFACE DESIGN - A TSV interface circuit for a TSV provided in an interposer substrate that forms a connection between a first die and a second die includes a driving circuit provided in the first die and a receiver circuit provided in the second die where the driving circuit is coupled to a first supply voltage and a second supply voltage that are both lower than the interposer substrate voltage that substantially reduces the parasitic capacitance of the TSV. The receiver circuit is also coupled to the first supply voltage and the second supply voltage that are both lower than the interposer substrate voltage. | 02-21-2013 |
20130168805 | Packages with Passive Devices and Methods of Forming the Same - A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A Post-Passivation Interconnect (PPI) line is disposed over the passivation layer and electrically coupled to the metal pad. An Under-Bump Metallurgy (UBM) is disposed over and electrically coupled to the PPI line. A passive device includes a portion at a same level as the UBM. The portion of the passive device is formed of a same material as the UBM. | 07-04-2013 |
20130307119 | PACKAGE WITH METAL-INSULATOR-METAL CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures. | 11-21-2013 |
20140001635 | Package with Passive Devices and Method of Forming the Same | 01-02-2014 |
20140029205 | Band Pass Filter for 2.5D/3D Integrated Circuit Applications - The present disclosure relates to a device and method for a band pass filter with a reduced cost, area penalty, and manufacturing complexity relative to current solutions. An integrated passive device chip comprising a plurality of capacitors embedded in a common molding compound along with a transceiver chip, and arranged within a polymer package. Ultra-thick metallization layers are disposed within the polymer package and configured to couple the integrated passive device chip to the transceiver chip. The ultra-thick metallization layers also form a plurality of transmission lines, wherein the combined integrated passive device chip and transmission lines form a band pass filter with improved frequency response, noise immunity, and cost and area penalty as compared to conventional solutions. The band pass filter may also be coupled to a plurality of solder balls comprising a Flip Chip Ball Grid Array suitable for 2.5D and 3D integrated circuit applications. | 01-30-2014 |
20140042612 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In an embodiment, a method of manufacturing a semiconductor device includes forming a first conductive structure over a workpiece in a first metallization layer, the first conductive structure including a first portion having a first width and a second portion having a second width. The second width is different than the first width. The method includes forming a second conductive structure in a second metallization layer proximate the first metallization layer, and coupling a portion of the second conductive structure to the first portion of the first conductive structure. | 02-13-2014 |
20140061898 | Metal Pads with Openings in Integrated Circuits - A device includes a metal pad, and a passivation layer including portions overlapping edge portions of the metal pad. A Post-Passivation-Interconnect (PPI) includes a trace portion overlying the passivation layer, and a pad portion connected to the trace portion. A polymer layer includes an upper portion over the PPI, and a plug portion extending into, and encircled by, the pad portion of the PPI. | 03-06-2014 |
20140073091 | Packages with Passive Devices and Methods of Forming the Same - A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A Post-Passivation Interconnect (PPI) line is disposed over the passivation layer and electrically coupled to the metal pad. An Under-Bump Metallurgy (UBM) is disposed over and electrically coupled to the PPI line. A passive device includes a portion at a same level as the UBM. The portion of the passive device is formed of a same material as the UBM. | 03-13-2014 |
20140252646 | Interconnect Structure for Package-on-Package Devices - An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package. | 09-11-2014 |
20140295624 | Package with Passive Devices and Method of Forming the Same - An embodiment is a device comprising a substrate, a metal pad over the substrate, and a passivation layer comprising a portion over the metal pad. The device further comprises a metal pillar over and electrically coupled to the metal pad, and a passive device comprising a first portion at a same level as the metal pillar, wherein the first portion of the passive device is formed of a same material as the metal pillar. | 10-02-2014 |