| Patent application number | Description | Published |
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| 20080197769 | ORGANIC LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME - An organic compound film is composed of a hole transporting region, a first mixed region, a light emitting region, a second mixed region, and an electron transporting region that are connected to one another. With the organic compound film thus structured, the blue organic light emitting device obtained is free from interfaces between layers which are present in the conventional laminate structure. When pigment doping is added to this device structure, a white organic light emitting device is obtained. A blue or white organic light emitting device having high light emission efficiency and long lifetime is provided by this method. When this organic light emitting device is combined with color conversion layers or color filters, a full color display device that consumes less power and lasts long can be obtained. | 08-21-2008 |
| 20080199992 | DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND TELEVISION RECEIVER - The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode. | 08-21-2008 |
| 20080203477 | SEMICONDUCTOR DEVICE - Plural kinds of thin film transistors having different film thicknesses of semiconductor layers are provided over a substrate having an insulating surface. A channel formation region of semiconductor layer in a thin film transistor for which high speed operation is required is made thinner than a channel formation region of a semiconductor layer of a thin film transistor for which high withstand voltage is required. A gate insulating layer of the thin film transistor for which high speed operation is required may be thinner than a gate insulating layer of the thin film transistor for which high withstand voltage is required. | 08-28-2008 |
| 20080203501 | SEMICONDUCTOR DEVICE - A semiconductor device with higher reliability and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor layer overlapping with a gate electrode and having an impurity region outside a region which overlaps with the gate electrode; a first conductive layer which is provided on a side provided with the gate electrode of the semiconductor layer and partially in contact with the impurity region; an insulating layer provided over the gate electrode and the first conductive layer; and a second conductive layer which is formed in the insulating layer and in contact with the first conductive layer through an opening at least part of which overlaps with the first conductive layer. | 08-28-2008 |
| 20080206915 | MANUFACTURING METHOD FOR DISPLAY DEVICE - With an interconnected fabrication step using the prior art photolithography, major portions of resist, interconnected material, and process gas necessary during plasma processing are wasted. Furthermore, a pumping means such as a vacuum system is necessary. Therefore, the whole equipment is increased in size. Consequently, as the processed substrate is increased in size, the manufacturing cost is increased. Accordingly, a means consisting of directly spraying the resist and interconnected material as liquid drops on necessary locations over the substrate to delineate a pattern is applied. Also, a means consisting of performing a vapor-phase reaction process such as ashing or etching at or near atmospheric pressure is applied. | 08-28-2008 |
| 20080210164 | Heat treatment apparatus and heat treatment method - An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed. A portion of the circulating gas may be expelled, and can be utilized as a heat source in order to preheat a newly introduced gas. | 09-04-2008 |
| 20080210928 | Semiconductor Device - The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order. | 09-04-2008 |
| 20080213929 | Light Emitting Device - An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT ( | 09-04-2008 |
| 20080213954 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film. | 09-04-2008 |
| 20080213986 | LASER ANNEALING METHOD AND LASER ANNEALING DEVICE - In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the surface of the semiconductor film in irradiating the laser beam and the laser annealing operation can be performed effectively. | 09-04-2008 |
| 20080224215 | SEMICONDUCTOR THIN FILM AND ITS MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer. | 09-18-2008 |
| 20080227232 | Method for manufacturing display device - An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween. | 09-18-2008 |
| 20080230682 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer. | 09-25-2008 |
| 20080230871 | SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT. | 09-25-2008 |
| 20080237875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer. | 10-02-2008 |
| 20080239230 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal display device using a plastic substrate becomes required to have high resolution, high opening ratio, high reliability, or the like, with the increasing of a screen size. Besides, high productivity and cost reduction is also required. According to the present invention, a protective film | 10-02-2008 |
| 20080246036 | Semiconductor Device, Television Set, and Method for Manufacturing The Same - An object of the invention is to provide a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, or a conductive film with an easy process, and further, a semiconductor device and a television set having a high throughput or a high yield at low cost and a manufacturing method thereof. One feature of the invention is that a first film pattern is formed by a droplet discharge method, a photosensitive material is discharged or applied to the first film pattern, a mask pattern is formed by irradiating a region where the first film pattern and the photosensitive material are overlapped with a laser beam and by developing, and a second film pattern having a desired shape is formed by etching the first film pattern using the mask pattern as a mask. | 10-09-2008 |
| 20080246407 | Display Device - The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern. | 10-09-2008 |
| 20080248609 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible. | 10-09-2008 |
| 20080252199 | Light Emitting Element and Light Emitting Device - The present invention provides a light-emitting element sandwiching a composite layer in which an organic compound and an inorganic compound are mixed between a first electrode and a second electrode, where the composite layer includes a first layer including a first organic compound and a first inorganic compound that exhibits an electron accepting property to the first organic compound (serves as an electron acceptor), a second layer including a second organic compound and a second inorganic compound, and a third layer including a third organic compound and a third inorganic compound that exhibits an electron donating property to the third organic compound (serves as an electron acceptor). | 10-16-2008 |
| 20080252207 | Light emitting device and manufacturing method of the same - Not all of light generated in the light emitting layer comprising the organic material are taken out in the desirable direction. For example, light emitted in the lateral direction (the direction parallel to the substrate face) is not taken out and therefore is a loss. An object of the present invention is to provide a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, as well as a method of manufacturing this light emitting device. | 10-16-2008 |
| 20080254598 | Laser Irradiation Method, Laser Irradiation Apparatus, And Semiconductor Device - An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser. | 10-16-2008 |
| 20080258610 | Light-Emitting Element, Light-Emitting Device, and Electronic Appliance - The cluster is formed in such a way that two molecules of arylamine compounds in each of which two arylamines each having one phenyl group and two aryl groups bonded with a nitrogen atom form a bisphenyl bond through the respective phenyl groups are arranged in parallel, thereby forming a dimolecular body and that the dimolecular body is coordinated to metal oxide. The light-emitting element has a layer including the cluster. A manufacturing method thereof includes the steps of vaporizing simultaneously metal oxide and an arylamine compound in which two arylamines each having one phenyl group and two aryl groups bonded with a nitrogen atom form a bisphenyl bond through the respective phenyl groups under vacuum and solidifying simultaneously the vaporized metal oxide and arylamine compound. | 10-23-2008 |
| 20080260938 | Film Formation Apparatus, Film Formation Method, Manufacturing Apparatus, and Method for Manufacturing Light-Emitting Device - An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat. | 10-23-2008 |
| 20080261379 | Method for manufacturing SOI substrate and semiconductor device - It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other. | 10-23-2008 |
| 20080268618 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a process of forming a single-crystalline semiconductor layer bonded to a glass substrate by low-temperature heat treatment, before a bonding and separation step in which the single-crystalline semiconductor layer is bonded to the glass substrate, the glass substrate is heated at a temperature higher than a heat temperature in the bonding and separation step. In a bonding step between the single-crystalline semiconductor layer and the glass substrate, the single-crystalline semiconductor layer is heated at a temperature close to a strain point of the glass substrate, specifically at a temperature in a range from minus 50° C. to plus 50° C. of a strain point. Accordingly, the glass substrate is subjected to heat treatment in advance at a temperature higher than the temperature close to the strain point, specifically, at a temperature higher than the temperature in a range from minus 50° C. to plus 50° C. of the strain point. | 10-30-2008 |
| 20080272374 | SEMICONDUCTOR DISPLAY DEVICE - To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes. | 11-06-2008 |
| 20080278064 | Light Emitting Element - It is an object of the present invention to provide a light-emitting element having a structure in which the drive voltage is relatively low. Further, it is an object of the invention to provide a highly reliable light emitting device by alleviating the stress to the light emitting layer. Further, it is another object of the invention to provide a light emitting element having a structure in which increase in the drive voltage over time is small. It is an object of the present invention to provide a display device in which the drive voltage is low and increase in the drive voltage over time is small and which can withstand long-term use. In a light emitting element, a layer in contact with an electrode serves as a hole generating layer such as an organic compound layer containing a P-type semiconductor or an electron accepting material, a light emitting layer is provided between hole generating layers, an electron generating layer is formed between the hole generation layer on the cathode side and the light emitting layer. | 11-13-2008 |
| 20080280033 | Droplet Discharge Device, and Method for Forming Pattern, and Method for Manufacturing Display Device - It is an object of the present invention to improve the usability of a material, and to provide a display device which can be manufactured by simplifying the manufacturing process and a manufacturing technique thereof. It is also an object of the invention to provide a technique in which a pattern of a wiring or the like constituting these display devices can be formed to have a desired shape with favorable controllability. One feature of a droplet discharge device of the invention comprises: a discharge means for discharging a composition including a pattern forming material; and a shape means for shaping the shape of the composition before the composition is attached to a formation region, in which the shape means is provided between the discharge means and the formation region. | 11-13-2008 |
| 20080282984 | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device - In this embodiment, an interval distance between a deposition source holder | 11-20-2008 |
| 20080283616 | Memory Device and Semiconductor Device - It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion. | 11-20-2008 |
| 20080294033 | Biological Signal Processing Unit, Wireless Memory, Biological Signal Processing System, And Control System Of Device To Be Controlled - It is an object to provide a means for easily operating various devices to be controlled (i.e. a word processor or a car) using a brain wave signal of a patient with Alzheimer's disease or a psychological disorder, and for supporting the active performance of a user by employing wireless communication with a memory (wireless memory) capable of communicating without wires in which a command on the human movement is memorized. A present biological signal processing unit has an electrode for detecting a biological signal (an electric signal) from a living body, or for transmitting an electric signal into a living body, an interface, and an antenna which can communicate with an external device (i.e. wireless memory, reader/writer); therefore, convenience of the user is improved in the case where a user utilizes an electronic device or the like. In addition, the active performance of a user can be supported. | 11-27-2008 |
| 20080296560 | Method for Manufacturing Semiconductor Device - The present invention provides a method for manufacturing a semiconductor device which can reduce characteristic deterioration due to impurity incorporation. The present invention also provides a semiconductor device and an electric appliance with reduced characteristic deterioration due to the impurity incorporation. The method for manufacturing a semiconductor device has a process for depositing an organic semiconductor. In addition, a process for introducing and exhausting gas having low reactivity while heating a treater so that temperature in the inside of the treater is higher than sublimation temperature of the organic semiconductor after taking a subject deposited with the organic semiconductor from the treater. | 12-04-2008 |
| 20080299496 | Manufacturing Apparatus and Manufacturing Method of Light-Emitting Device - Demands such as higher definition, higher opening aperture, and higher reliability on a full-color flat panel display have been increased. Such demands are big objects in advancing higher definition (increase in the number of pixels) of a light-emitting device and miniaturization of each display pixel pitch with reduction in size of the light-emitting device. An organic compound-containing layer is selectively deposited using a laser beam which passes through openings of a mask. An irradiated substrate provided with a light absorption layer and a material layer containing an organic compound and a deposition substrate provided with first electrodes are placed so as to face each other. The light absorption layer is heated by a laser beam which has passed through the openings of the mask, and the organic compound at a position overlapping with the heated region is vaporized, and accordingly the organic compound is selectively deposited over the deposition substrate. | 12-04-2008 |
| 20080303408 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier-films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs. | 12-11-2008 |
| 20080305569 | Semiconductor Device and a Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 12-11-2008 |
| 20080308807 | Display device and manufacturing method thereof - It is an object to provide a manufacturing method by which display devices can be manufactured in quantity without degrading the characteristics of thin film transistors. In a display device including a thin film transistor in which a microcrystalline semiconductor film, a gate insulating film in contact with the microcrystalline semiconductor film, and a gate electrode overlap with each other, an antioxidant film is formed on a surface of the microcrystalline semiconductor film. The antioxidant film on the surface of the microcrystalline semiconductor film can prevent a surface of a microcrystal grain from being oxidized, thereby preventing the mobility of the thin film transistor from decreasing. | 12-18-2008 |
| 20080308830 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel forming region become longer. The first impurity region is formed to be overlapped with a side wall. A gate overlapping structure can be realized with the side wall functioning as an electrode. | 12-18-2008 |
| 20080309585 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, comprises the steeps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate. | 12-18-2008 |
| 20080311286 | Thermal Treatment Equipment and Method for Heat-Treating - The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment rooms of n pieces (n> | 12-18-2008 |
| 20080315202 | DISPLAY DEVICE - A resin material having a small relative dielectric constant is used as a layer insulation film | 12-25-2008 |
| 20090001896 | Light-Emitting Device and Method of Manufacturing the Same, and Method of Operating Manufacturing Apparatus - The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed blow the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, little damage was observed on the EL layer, but significant damages were found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT. | 01-01-2009 |
| 20090008643 | Light Emitting Device, Method of Manufacturing the Same, and Manufacturing Apparatus Therefor - A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision. | 01-08-2009 |
| 20090011611 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed. | 01-08-2009 |
| 20090015524 | Electro-optical device - An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period. | 01-15-2009 |
| 20090020762 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer. | 01-22-2009 |
| 20090029739 | Portable Electronic Device - When image data is displayed on the display portion of a conventional mobile telephone, characters cannot be displayed thereon, and thus the image data and the characters cannot be simultaneously displayed. In a portable electronic device according to the present invention, a cover member having a first display device ( | 01-29-2009 |
| 20090033600 | Light Emitting Device and Method of Driving the Light Emitting Device - A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element ( | 02-05-2009 |
| 20090035922 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more. | 02-05-2009 |
| 20090040445 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance. | 02-12-2009 |
| 20090042326 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %. | 02-12-2009 |
| 20090042356 | Peeling Method and Method of Manufacturing Semiconductor Device - There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( | 02-12-2009 |
| 20090042394 | MANUFACTURING METHOD FOR WIRING - In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized. | 02-12-2009 |
| 20090046236 | Liquid Crystal Display Device - A height difference under a sealant is reduced in a case where lines are present under the sealant. | 02-19-2009 |
| 20090047758 | METHOD OF MANUFACTURING DISPLAY DEVICE - In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10 | 02-19-2009 |
| 20090050941 | Semiconductor device - A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer. | 02-26-2009 |
| 20090051270 | EL Display Device and Manufacturing Method Thereof - Reducing the manufacturing cost of an EL display device and an electronic device furnished with the EL display device is taken as an objective. A textured structure in which projecting portions are formed on the surface of a cathode is used. External stray light is diffusely (irregularly) reflected by the action of the projecting portions when reflected by the surface of the cathode, and therefore a defect in which the face of an observer or the surrounding scenery is reflected in the surface of the cathode can be prevented. This can be completed without using a conventionally necessary high price circular polarizing film, and therefore it is possible to reduce the cost of manufacturing the EL display device. | 02-26-2009 |
| 20090057670 | Semiconductor Device and Process for Production Thereof - Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area. | 03-05-2009 |
| 20090057672 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 03-05-2009 |
| 20090057675 | Display device and electronic appliance including the display device - To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided. | 03-05-2009 |
| 20090057726 | Manufacturing method of semiconductor device, semiconductor device, and electronic device - An embrittlement layer is formed in a single crystal semiconductor substrate having a (110) plane as a main surface by irradiation of the main surface with ions, and an insulating layer is formed over the main surface of the single crystal semiconductor substrate. The insulating layer and a substrate having an insulating surface are bonded, and the single crystal semiconductor substrate is separated along the embrittlement layer to provide a single crystal semiconductor layer having the (110) plane as a main surface over the substrate having the insulating surface. Then, an n-channel transistor and a p-channel transistor are formed so as to each have a <110> axis of the single crystal semiconductor layer in a channel length direction. | 03-05-2009 |
| 20090058285 | Deposition Apparatus and Deposition Method - A deposition apparatus is provided for manufacturing an organic compound layer having a plurality of function regions. The deposition apparatus includes a plurality of evaporation sources within a deposition chamber, for enabling continuous formation of respective function regions comprised of organic compounds and, further, formation of a mixed region at an interface between adjacent ones of the function regions. With the deposition apparatus having such fabrication chamber, it is possible to prevent impurity contamination between the functions regions and further possible to form an organic compound layer with an energy gap relaxed at the interface. | 03-05-2009 |
| 20090061551 | Light Emitting Apparatus and Method of Fabricating the Same - Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation. | 03-05-2009 |
| 20090066589 | Wireless Chip - The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface. | 03-12-2009 |
| 20090072235 | ELECTRONIC DEVICE HAVING LIQUID CRYSTAL DISPLAY DEVICE - A display device of the present invention includes a first substrate and a second substrate opposed to each other, a liquid crystal interposed between the first substrate and the second substrate, an active matrix circuit and a driving circuit each comprising a thin film transistor formed over the first substrate, a resin layer formed over the active matrix circuit and the driving circuit, a spacer formed over the active matrix circuit, a sealing material formed over the driving circuit, and a filler included in the sealing material and in contact with the resin layer. | 03-19-2009 |
| 20090072238 | INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - An LDD structure is manufactured to have a desired aspect ratio of the height to the width of a gate electrode. The gate electrode is first deposited on a semiconductor substrate followed by ion implantation with the gate electrode as a mask to form a pair of impurity regions. The gate electrode is then anodic oxidized to form an oxide film enclosing the electrode. With the oxide film as a mask, highly doped regions are formed by ion implantation in order to define lightly doped regions between the highly doped regions and the channel region located therebetween. | 03-19-2009 |
| 20090072343 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm. | 03-19-2009 |
| 20090072757 | METHOD OF DRIVING A LIGHT EMITTING DEVICE - The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |V | 03-19-2009 |
| 20090074952 | Fabrication System and a Fabrication Method of a Light Emitting Device - An evaporation apparatus with high utilization efficiency for EL materials and excellent film uniformity is provided. The invention is an evaporation apparatus having a movable evaporation source and a substrate rotating unit, in which the space between an evaporation source holder and a workpiece (substrate) is narrowed to 30 cm or below, preferably 20 cm, more preferably 5 to 15 cm, to improve the utilization efficiency for EL materials. In evaporation, the evaporation source holder is moved in the X-direction or the Y-direction, and the workpiece (substrate) is rotated for deposition. Therefore, film uniformity is improved. | 03-19-2009 |
| 20090075411 | MANUFACTURING APPARATUS - A manufacturing apparatus is provided, which can improve a utilization efficiency of an evaporation material, reduce manufacturing costs of a light emitting device having an organic light emitting element, and shorten manufacturing time necessary to manufacture a light emitting device. According to the present invention, a multi-chamber manufacturing apparatus having plural film forming chambers includes a first film forming chamber for subjecting a first substrate to evaporation and a second film forming chamber for subjecting a second substrate to evaporation. In each film forming chamber, plural organic compound layers are laminated, thereby improving the throughput. Further, it is possible that the respective substrates in the plural film forming chambers are subjected to evaporation in the same manner in parallel, while another film forming chamber undergoes cleaning. | 03-19-2009 |
| 20090081816 | LIGHT EMITTING DEVICE AND PRODUCTION SYSTEM OF THE SAME - To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and data of a change over time of luminance of a light emitting element. Further, by correcting a video signal inputted to the light emitting device in conformity with a characteristic of the driving TFT of each pixel and a degree of a deterioration of the light emitting element based on the over-described two data, nonuniformity of luminance caused by a deterioration of an electroluminescent layer and nonuniformity of luminance caused by dispersion of a characteristic of the driving TFT are restrained. | 03-26-2009 |
| 20090085182 | Semiconductor device and method for manufacturing the same - A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 10 | 04-02-2009 |
| 20090090954 | NONVOLATILE MEMORY AND MANUFACTURING METHOD THEREOF - Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the memory element TFTs. This enables low-voltage write/erase operations to be performed on the memory elements, and hence the memory elements are less prone to deteriorate. Therefore, a nonvolatile memory capable of miniaturization can be provided. | 04-09-2009 |
| 20090091014 | Semiconductor Device Having a Flexible Printed Circuit - To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel. | 04-09-2009 |
| 20090096369 | ORGANIC LIGHT EMITTING ELEMENT AND DISPLAY DEVICE USING THE ELEMENT - A hole transporting region made of a hole transporting material, an electron transporting region made of an electron transporting material, and a mixed region (light emitting region) in which both the hole transporting material and the electron transporting material are mixed and which is doped with a triplet light emitting material for red color are provided in an organic compound film, whereby interfaces between respective layers which exist in a conventional lamination structure are eliminated, and respective functions of hole transportation, electron transportation, and light emission are exhibited. In accordance with the above-mentioned method, the organic light emitting element for red color can be obtained in which power consumption is low and a life thereof is long. Thus, the display device and the electric device are manufactured by using the organic light emitting element. | 04-16-2009 |
| 20090098739 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate. | 04-16-2009 |
| 20090101901 | Semiconductor device and manufacturing method thereof - By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer. | 04-23-2009 |
| 20090101910 | Thin-film transistor - A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking lay r and a gate insulator of the transistor. | 04-23-2009 |
| 20090104721 | Deposition Method and Method for Manufacturing Light Emitting Device - An object is to provide a deposition method by which a film having a desired shape can be formed with high productivity. Further, a method for manufacturing a light emitting device by which a light emitting device having high definition can be manufactured with high productivity is provided. Specifically, even in the case of using a large-sized substrate, a method for manufacturing a light emitting device having high definition is provided. By using a deposition target substrate and a shadow mask having a smaller area than the deposition target substrate, the deposition target substrate and the shadow mask are aligned with each other, and an evaporation material is deposited on at least part of the deposition target substrate through a plurality of deposition steps. As an evaporation source, a light absorption layer and a supporting substrate having the evaporation material is preferably used. | 04-23-2009 |
| 20090108263 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled. | 04-30-2009 |
| 20090109143 | EL Display Device and A Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue. | 04-30-2009 |
| 20090114917 | THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode, a gate insulating layer covering the gate electrode, a microcrystalline semiconductor layer over the gate insulating layer, an amorphous semiconductor layer over the microcrystalline semiconductor layer, source and drain regions over the amorphous semiconductor layer, source and drain electrodes in contact with and over the source and drain regions, and a part of the amorphous semiconductor layer overlapping with the source and drain regions is thicker than a part of the amorphous semiconductor layer overlapping with a channel formation region. The side face of the source and drain regions and the side face of the amorphous semiconductor form a tapered shape together with an outmost surface of the amorphous semiconductor layer. The taper angle of the tapered shape is such an angle that decrease electric field concentration around a junction portion between the source and drain regions and the amorphous semiconductor layer. | 05-07-2009 |
| 20090117680 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device which is excellent in photoelectric conversion characteristics is provided by effectively utilizing silicon semiconductor materials. The present invention relates to a method for manufacturing a photoelectric conversion device using a solar cell, in which a plurality of single crystal semiconductor substrates in each of which a damaged layer is formed at a predetermined depth is arranged over a supporting substrate having an insulating surface; a surface layer part of the single crystal semiconductor substrate is separated thinly using the damaged layer as a boundary so as to form a single crystal semiconductor layer over one surface of the supporting substrate; and the single crystal semiconductor layer is irradiated with a laser beam from a surface side which is exposed by separation of the single crystal semiconductor layer to planarize the surface of the single crystal semiconductor layer. | 05-07-2009 |
| 20090117692 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A single crystal semiconductor substrate bonded over a supporting substrate with a buffer layer interposed therebetween and having a separation layer is heated to separate the single crystal semiconductor substrate using the separation layer or a region near the separation layer as a separation plane, thereby forming a single crystal semiconductor layer over the supporting substrate. The single crystal semiconductor layer is irradiated with a laser beam to re-single-crystallize the single crystal semiconductor layer through melting. An impurity element is selectively added into the single crystal semiconductor layer to form a pair of impurity regions and a channel formation region between the pair of impurity regions. The single crystal semiconductor layer is heated at temperature which is equal to or higher than 400° C. and equal to or lower than a strain point of the supporting substrate and which does not cause melting of the single crystal semiconductor layer. | 05-07-2009 |
| 20090117704 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - As a base substrate, a substrate having an insulating surface such as a glass substrate is used. Then, a single crystal semiconductor layer is formed over the base substrate with the use of a large-sized semiconductor substrate. Note that, it is preferable that the base substrate be provided with a plurality of single crystal semiconductor layers. After that, the single crystal semiconductor layers are cut to divide the single crystal semiconductor layers into a plurality of single crystal semiconductor regions by patterning. Next, the single crystal semiconductor regions are irradiated with laser light or heat treatment is performed on the single crystal semiconductor regions in order to improve the planarity of surfaces and reduce defects. Peripheral portions of the single crystal semiconductor regions are not used as semiconductor elements, and central portions of the single crystal semiconductor regions are used as the semiconductor elements. | 05-07-2009 |
| 20090120498 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A photoelectric conversion device with an excellent photoelectric conversion characteristic with a silicon semiconductor material effectively utilized. The photoelectric conversion device includes a first unit cell including a first electrode, a first impurity semiconductor layer, a single crystal semiconductor layer, and a second impurity semiconductor layer; and a second unit cell including a third impurity semiconductor layer, a non-single-crystal semiconductor layer, a fourth impurity semiconductor layer, and a second electrode. The second and third impurity semiconductor layers are in contact with each other so that the first and second unit cells are connected in series, and an insulating layer is provided for a surface of the first electrode and bonded to a supporting substrate. | 05-14-2009 |
| 20090123643 | Electronic Device and Method for Manufacturing the Same - An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×10 | 05-14-2009 |
| 20090124062 | DISPLAY DEVICE HAVING A CURVED SURFACE - The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed. | 05-14-2009 |
| 20090127555 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 μm or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells. | 05-21-2009 |
| 20090128026 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification. | 05-21-2009 |
| 20090134383 | Electrode for Organic Transistor, Organic Transistor, and Semiconductor Device - It is an object of the present invention, in a case of using a conductive material as part of an electrode for an organic transistor, to provide an organic transistor having a structure whose characteristics are not controlled by the work function of the conductive material. Moreover, it is other objects of the present invention to provide an organic transistor having favorable carrier mobility and to provide an organic transistor which is excellent in durability. A composite layer containing an organic compound and an inorganic material is used for an electrode for an organic field effect transistor, that is, at least part of one of a source electrode and a drain electrode in the organic field effect transistor. | 05-28-2009 |
| 20090134399 | Semiconductor Device and Method for Manufacturing the Same - A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode. | 05-28-2009 |
| 20090137087 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, FILM DEPOSITION METHOD, AND FILM DEPOSITION APPARATUS - An object is to provide a film deposition apparatus in which the amount of leakage from the outside of the chamber to the inside of the chamber is reduced. Even if leakage occurs from the outside of the chamber to the inside of the chamber, oxygen and nitrogen included in an atmosphere that surrounds the outer wall of the chamber are reduced as much as possible and the atmosphere is filled with a noble gas or hydrogen, whereby the inside of the chamber is kept cleaner at 1/100 or less, preferably, 1/1000 or less of oxygen concentration and nitrogen concentration than those in the air. Since the space with high airtightness is provided adjacent to the outside of the chamber, the chamber is covered with a bag and a high-purity argon gas is supplied to the bag. | 05-28-2009 |
| 20090137103 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In order to improve the quality of a microcrystalline semiconductor film which is formed at an early stage of deposition, a microcrystalline semiconductor film near an interface with a base insulating film is formed under a deposition condition in which a deposition rate is low but the quality of a film to be formed is high; then, a microcrystalline semiconductor film is further deposited at a deposition rate which is increased stepwise or gradually. The microcrystalline semiconductor film is formed in a reaction chamber which is provided in a deposition chamber with space around the reaction chamber, by a chemical vapor deposition method. Further, a scaling gas is supplied into the space to help place the reaction chamber in an ultrahigh vacuum, whereby the concentration of an impurity in the microcrystalline semiconductor film near the interface with the base insulating film is reduced. | 05-28-2009 |
| 20090139558 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a photoelectric conversion device with an excellent photoelectric converting characteristic while effectively utilizing silicon semiconductor material. A photoelectric conversion device comprises a first electrode, a first unit cell including a single-crystal semiconductor layer which is obtained by cleaving a single crystal semiconductor substrate at a damaged layer, a second unit cell including a non-single-crystal semiconductor layer, an intermediate layer including a transition metal oxide, and a second electrode, wherein the first unit cell and second unit cell are connected in series with the intermediate layer interposed therebetween and are sandwiched between the first electrode and the second electrode. | 06-04-2009 |
| 20090140053 | SEMICONDUCTOR DEVICE - A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film. | 06-04-2009 |
| 20090140231 | Semiconductor device and method of manufacturing the same - It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer. | 06-04-2009 |
| 20090140251 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor having excellent electric characteristics, a display device including the thin film transistor, and a manufacturing method thereof are provided. In a thin film transistor in which a microcrystalline germanium film, a gate insulating film in contact with one surface of the microcrystalline germanium film, and a gate electrode overlap with one another and a display device including the thin film transistor, a buffer layer is formed over the other surface of the microcrystalline germanium film. By using a microcrystalline germanium film for a channel formation region, a thin film transistor with high field-effect mobility and high on-current can be manufactured, and by providing a buffer layer between the microcrystalline germanium film functioning as a channel formation region and a source and drain regions, a thin film transistor with low off-current can be manufactured, that is, a thin film transistor with excellent electric characteristics can be manufactured. | 06-04-2009 |
| 20090140259 | THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device in a high yield are provided. In the thin film transistor, a gate electrode, a gate insulating film, crystal grains that mainly contain silicon and are provided for a surface of the gate insulating film, a semiconductor film that mainly contains germanium and covers the crystal grains and the gate insulating film, and a buffer layer in contact with the semiconductor film that mainly contains germanium overlap with one another. Further, the display device has the thin film transistor. | 06-04-2009 |
| 20090140337 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device with increased freedom of wirings and a manufacturing method thereof are provided by enabling favorable connection between an upper wiring layer and a lower wiring layer through a semiconductor element. The semiconductor device includes: a first insulating layer over an insulating substrate; a first wiring layer and a second insulating layer on the first insulating layer; a single crystal semiconductor layer including a channel region and an impurity region, on the first wiring layer and the second insulating layer; a gate electrode over the channel region with a gate insulating layer interposed therebetween; a third insulating layer covering the first wiring layer, the single crystal semiconductor layer, and the gate electrode; and a second wiring layer over the third insulating layer. The first wiring layer is in contact with the impurity region, and the first and wiring layers are electrically connected to each other. | 06-04-2009 |
| 20090141004 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide an input device including a display screen which has an image display function and a text information input function by using a display portion in which a pixel includes an optical sensor. An optical sensor is provided in each pixel of the display portion in order to detect position information. A transistor of a pixel circuit in the display portion and the optical sensor are formed using a single crystal semiconductor layer. By using the single crystal semiconductor layer, there is no variation in characteristics among pixels, and position detection with high accuracy is realized. Moreover, the display portion is formed using a substrate which is a light-transmitting substrate such as a glass substrate provided with a single crystal semiconductor layer separated from a single crystal semiconductor substrate. | 06-04-2009 |
| 20090143109 | MOBILE PHONE - To provide a mobile phone which can be used without hampering convenience in a condition where functions of the mobile phone are switched and can improve operability. The mobile phone includes an optical sensor, a display element, a pixel circuit portion where a plurality of pixels having a plurality of transistors are arranged in matrix, an optical sensor control circuit which is connected to an optical sensor driver circuit for driving the optical sensor and reads a signal from the optical sensor, a display portion control circuit which is connected to a display element driver circuit for driving the display element and outputs an image signal for displaying an image on a display portion, a gradient detection portion for outputting a signal in accordance with a gradient of the mobile phone, and an arithmetic circuit for performing display in the pixel circuit portion by switching image signals output to the display portion control circuit with a signal from the gradient detection portion. | 06-04-2009 |
| 20090146149 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof. | 06-11-2009 |
| 20090149224 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE - Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a seating member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP | 06-11-2009 |
| 20090152539 | Semiconductor Apparatus and Fabrication Method of the Same - It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity. | 06-18-2009 |
| 20090159890 | Semiconductor Display Device - A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line. | 06-25-2009 |
| 20090165854 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device includes a first unit cell in which one face of a single crystal semiconductor layer is provided with a first electrode and a first impurity semiconductor layer including one conductivity type and an opposite face is provided with a second impurity semiconductor layer including a conductivity type opposite to the one conductivity type, and a second unit cell including a p-type organic semiconductor and an n-type organic semiconductor. The first unit cell and the second unit cell are connected in series with an intermediate layer interposed therebetween. The intermediate layer includes a transition metal oxide. A face of the first electrode which is opposite to the single crystal semiconductor layer is provided with an insulating layer, and the insulating layer is bonded to a supporting substrate. | 07-02-2009 |
| 20090166631 | THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME - One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film transistor. Further, another object of the present invention is improvement of image quality of the display device including the thin film transistor. The thin film transistor includes a semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or a conductive film which is provided over a gate electrode with the gate insulating film interposed therebetween and which is provided in an inner region of the gate electrode so as not to overlap with an end portion of the gate electrode, a film covering at least a side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film, a pair of wirings formed over the film covering the side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film. | 07-02-2009 |
| 20090166896 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Objects are to reduce damage to a semiconductor integrated circuit by external stress and to increase the manufacturing yield of a thinned semiconductor integrated circuit. A single crystal semiconductor layer separated from a single crystal semiconductor substrate is used for a semiconductor element included in the semiconductor integrated circuit. Moreover, a substrate which is formed into a thin shape and provided with the semiconductor integrated circuit is covered with a resin layer. In a separation step, a groove for separating a semiconductor element layer is formed in the supporting substrate, and a resin layer is provided over the supporting substrate in which the groove is formed. After that, the resin layer and the supporting substrate are cut in the groove so as to be divided into a plurality of semiconductor integrated circuits. | 07-02-2009 |
| 20090170227 | MASK AND CONTAINER AND MANUFACTURING - The present invention provides a large mask with a high mask accuracy for conducting selective deposition on a substrate with a large surface area. In accordance with the present invention, the mask body is fixed in a fixing position disposed on a line passing through a thermal expansion center in the width of the mask frame. Further, in accordance with the present invention, the substrate and mask body are fixed and deposition is carried out by moving the deposition source in the X direction or Y direction. A method comprising moving the deposition source in the X direction or Y direction is suitable for deposition on large substrates. | 07-02-2009 |
| 20090174333 | Display Device and Electronic Device - A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L | 07-09-2009 |
| 20090179549 | ELECTRONIC DISPLAY INCLUDING A LIGHT-EMITTING ELEMENT AND A COLOR FILTER SANDWICHED BETWEEN TWO POLARIZERS - It is an object of the invention to achieve weight saving and downsizing of an electronic apparatus, in particular a portable electronic apparatus while enlarging a display screen thereof. The invention provides an electronic apparatus using a light emitting device which includes a light emitting element, a color filter provided on either side of an anode or a cathode of the light emitting element, and two polarizers sandwiching the light emitting element and the color filter, in which the anode and the cathode transmit light, deflection angles of the two polarizers are different from each other, and light obtained from the light emitting element is white. | 07-16-2009 |
| 20090180326 | Non-Volatile Memory and Semiconductor Device - There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS. | 07-16-2009 |
| 20090183766 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device in which the damage such as cracks, chinks, or dents caused by external stress is reduced is provided. In addition, the yield of a semiconductor device having a small thickness is increased. The semiconductor device includes a light-transmitting substrate having a stepped side surface, the width of which in a portion above the step and closer to one surface is smaller than that in a portion below the step, a semiconductor element layer provided over the other surface of the light-transmitting substrate, and a stack of a first light-transmitting resin layer and a second light-transmitting resin layer, which covers the one surface and part of the side surface of the light-transmitting substrate. One of the first light-transmitting resin layer and the second light-transmitting resin layer has a chromatic color. | 07-23-2009 |
| 20090185130 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained. | 07-23-2009 |
| 20090186439 | Thin Film Forming Apparatus - There is provided a thin film forming apparatus for precisely forming a film of an organic EL material made of a polymer without a positional deviation and at a high throughput. A pixel portion is divided into a plurality of pixel lines by banks, and a head portion of the thin film forming apparatus is moved along the pixel lines, so that a coating liquid (R), a coating liquid (G), and a coating liquid (B) can be applied respectively in a stripe shape at the same time. Then, luminescent layers emitting lights of respective colors of red, green and blue can be formed by heating these coating liquids. | 07-23-2009 |
| 20090186469 | APPARATUS AND METHOD FOR DOPING - There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current. | 07-23-2009 |
| 20090189511 | Light-Emitting Device - A light-emitting device having the quality of an image high in homogeneity is provided. A printed wiring board (second substrate) ( | 07-30-2009 |
| 20090190056 | ELECTRO-OPTICAL DEVICE AND METHOD FOR DRIVING THE SAME - A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field affect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes. | 07-30-2009 |
| 20090194803 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided. | 08-06-2009 |
| 20090195387 | SEMICONDUCTOR DEVICE - A semiconductor device with improved reliability, in which increase in power consumption can be reduced. The semiconductor device includes an antenna for transmitting and receiving a wireless signal to/from a communication device and at least first and second functional circuits electrically connected to the antenna. The first functional circuit includes a power supply control circuit for controlling power supply voltage output from a power supply circuit in the second functional circuit. A power supply control circuit in the second functional circuit includes a transistor of which first terminal is electrically connected to an output terminal of the power supply circuit and second terminal is electrically connected to a ground line. A gate terminal of the transistor is electrically connected to the power supply control circuit included in one functional circuit. | 08-06-2009 |
| 20090195523 | Electrooptical Device and Method of Fabricating the Same - There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are formed on the active matrix substrate. At this time, the logic circuitry is disposed, by making use of a dead space in the pixel matrix circuit. The area occupied by the pixel matrix circuit, or image display region, can be enlarged without being limited by the area occupied by the logic circuitry. | 08-06-2009 |
| 20090197012 | PLASMA CVD APPARATUS - In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber | 08-06-2009 |
| 20090197391 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A method for manufacturing an SOI substrate is provided in which adhesiveness between a single crystal semiconductor substrate and a semiconductor substrate is improved; bonding defects are reduced; and sufficient bonding strength is provided in a bonding step and also in a process of manufacturing a semiconductor device. An insulating film including halogen is formed on a single crystal semiconductor substrate side in which an embrittlement layer is formed. The insulating film including halogen undergoes a plasma treatment. The insulating film including halogen and a face of a semiconductor substrate are bonded so as to face each other. A thermal treatment is performed to split the single crystal semiconductor substrate along the embrittlement layer, thereby separating the single crystal semiconductor substrate into a single crystal semiconductor substrate and the semiconductor substrate to which a single crystal semiconductor layer is bonded. The single crystal semiconductor layer bonded to the semiconductor substrate undergoes a planarization treatment. | 08-06-2009 |
| 20090203191 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an embrittled region at a predetermined depth from a surface of the semiconductor substrate; plasma treatment of the oxide film is performed by applying a bias voltage; a surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other to bond a surface of the oxide film and the surface of the base substrate to each other; and heat treatment is performed to cause separation along the embrittled region after bonding the surface of the oxide film and the surface of the base substrate to each other, thereby forming a semiconductor film over the base substrate with the oxide film interposed therebetween. | 08-13-2009 |
| 20090206331 | LIGHT EMITTING DEVICE - A light emitting device and electronic equipment having a long life at a low electric power consumption are provided. A hole transporting region composed of a hole transporting material, an electron transporting region composed of an electron transporting material, and a mixture region in which both the hole transporting material and the electron transporting material are mixed at a fixed ratio are formed within an organic compound film. Regions having a concentration gradient are formed between the mixture region and carrier transporting regions until the fixed ratio is achieved. In addition, by doping a light emitting material into the mixture region, functions of hole transportation, electron transportation, and light emission can be respectively expressed while all of the interfaces existing between layers of a conventional lamination structure are removed. Organic light emitting elements having low electric power consumption and a long life can thus be provided, and light emitting devices and electronic equipment can be manufactured using the organic light emitting elements. | 08-20-2009 |
| 20090212294 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. | 08-27-2009 |
| 20090218219 | Manufacturing Apparatus - A manufacturing apparatus in which an organic thin film such as a light emitting layer is formed with high material use efficiency or high operating efficiency and a light emitting device is manufactured, is provided. The manufacturing apparatus includes a load chamber, a common chamber connected to the load chamber, a plurality of treatment chambers connected to the common chamber, and a laser light source, in which deposition is selectively performed on a first substrate by forming a material layer on a second substrate in the treatment chamber in advance; aligning the second substrate and the first substrate in the common chamber; and then scanning the second substrate with laser light. In the manufacturing apparatus, selective deposition is performed on the first substrate more than once in the common chamber. | 09-03-2009 |
| 20090218572 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers. | 09-03-2009 |
| 20090218576 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers. | 09-03-2009 |
| 20090220706 | Film-Formation Method and Manufacturing Method of Light-Emitting Device - A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer. | 09-03-2009 |
| 20090221107 | Deposition Method and Manufacturing Method of Light-Emitting Device - Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer. | 09-03-2009 |
| 20090231533 | Semiconductor Device and Manufacturing Method Thereof - A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps. | 09-17-2009 |
| 20090233006 | Deposition Method and Manufacturing Method of Light-Emitting Device - A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer. | 09-17-2009 |
| 20090233390 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided. | 09-17-2009 |
| 20090233425 | PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented. | 09-17-2009 |
| 20090236600 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer. | 09-24-2009 |
| 20090236698 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability. | 09-24-2009 |
| 20090237467 | METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE - A technique capable of efficient, high speed processing for the formation of an organic compound layer by using an ink jet method is provided. In the method of forming an organic compound layer by using the ink jet method, a composition containing an organic compound having light emitting characteristics is discharged from an ink head, forming a continuous organic compound layer. The organic compound layer is formed on pixel electrodes aligned in a matrix shape, and is formed in a continuous manner over a plurality of pixel electrodes. A light emitting device is manufactured using organic light emitting elements in accordance with this manufacturing method. | 09-24-2009 |
| 20090239320 | SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer | 09-24-2009 |
| 20090239580 | COMMUNICATION SYSTEM - A communication system capable of easily distinguishing a user includes means for storing reference living body information, means for reading collation living body information of the user, means for collating the collation living body information with the reference living body information and means for sending a notice of coincidence as data to a mating party when the collation result proves coincident. | 09-24-2009 |
| 20090243464 | Display Device and Method of Fabricating the Display Device - In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented. | 10-01-2009 |
| 20090246937 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even when a single crystal semiconductor substrate in which crystal defects exist is used. Such an SOI substrate can be manufactured through the steps of forming a single crystal semiconductor layer which has an extremely small number of defects over a single crystal semiconductor substrate by an epitaxial growth method; forming an oxide film on the single crystal semiconductor substrate by thermal oxidation treatment; introducing ions into the single crystal semiconductor substrate through the oxide film; bonding the single crystal semiconductor substrate into which the ions are introduced and a semiconductor substrate to each other; causing separation by heat treatment; and performing planarization treatment on the single crystal semiconductor layer provided over the semiconductor substrate. | 10-01-2009 |
| 20090250704 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 10-08-2009 |
| 20090256467 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride. | 10-15-2009 |
| 20090261330 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - It is an object to control quality of a microcrystalline semiconductor film or a semiconductor film including crystal grains so that operation characteristics of a semiconductor element typified by a TFT can be improved. It is another object to improve characteristics of a semiconductor element typified by a TFT by controlling a deposition process of a microcrystalline semiconductor film or a semiconductor film including crystal grains. In addition, it is another object to increase on-state current of a thin film transistor and to reduce off-state current of the thin film transistor. In a semiconductor layer including a plurality of crystalline regions in an amorphous structure, generation positions and generation density of crystal nuclei from which the crystalline regions start to grow are controlled, whereby quality of the semiconductor layer is controlled. In addition, after generation of crystal nuclei from which the crystalline regions start to grow in the semiconductor layer, an impurity element serving as a donor is added to the semiconductor layer, whereby crystallinity of the semiconductor layer is increased and the resistivity of the semiconductor layer is reduced. | 10-22-2009 |
| 20090261337 | SEMICONDUCTOR DEVICE - It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region. | 10-22-2009 |
| 20090261414 | Semiconductor Device and Method for Manufacturing the Same - An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings. | 10-22-2009 |
| 20090261444 | SEMICONDUCTOR DEVICE - A wiring electrically connected to a terminal to which a high power supply potential is applied and a wiring electrically connected to a terminal to which a low power supply potential is applied are formed adjacent to each other and are formed so as to surround the integrated circuit. Thus, wiring resistance can be added between the terminals and the integrated circuit and capacitance can be added between the two wirings. Even if overvoltage is applied to the terminals due to ESD or the like, the energy of the overvoltage is consumed by the wiring resistance and the added capacitor, so that damage of the integrated circuit can be suppressed. | 10-22-2009 |
| 20090267066 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow. | 10-29-2009 |
| 20090267068 | THIN FILM TRANSISTOR - The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer. | 10-29-2009 |
| 20090267073 | Semiconductor Device and Method of Manufacturing the Same - The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( | 10-29-2009 |
| 20090267076 | EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Plurality of pixels ( | 10-29-2009 |
| 20090267173 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors. | 10-29-2009 |
| 20090268117 | Liquid Crystal Display Device - In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material. | 10-29-2009 |
| 20090269486 | EVAPORATION METHOD, EVAPORATION DEVICE AND METHOD OF FABRICATING LIGHT EMITTING DEVICE - The invention provides an evaporation system which is one of deposition devices promoting an efficiency of utilizing an EL material and excellent in uniformity and throughput of forming an EL layer and an evaporation method therefor. Further, the invention provides a method of efficiently vapor-depositing an EL material to a large area substrate. Further, the invention provides a system capable of avoiding an impurity from mixing to the EL material. | 10-29-2009 |
| 20090269870 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide. | 10-29-2009 |
| 20090269871 | EL Display Device and Method of Manufacturing the Same - To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue. | 10-29-2009 |
| 20090269886 | Manufacturing Method of Semiconductor Device - A manufacturing method of a semiconductor device is provided, which includes a process in which a transistor is formed over a first substrate; a process in which a first insulating layer is formed over the transistor; a process in which a first conductive layer connected to a source or a drain of the transistor is formed; a process in which a second substrate provided with an second insulating layer is arranged so that the first insulating layer is attached to the second insulating layer; a process in which the second insulating layer is separated from the second substrate; and a process in which a third substrate provided with a second conductive layer which functions as an antenna is arranged so that the first conductive layer is electrically connected to the second conductive layer. | 10-29-2009 |
| 20090270134 | ELECTRONIC DEVICE - An easy to use electronic device is provided. The electronic device functions as a telephone and has a display portion, an audio input portion, an audio output portion, and operation keys. The display portion has a passive element, and the operation keys have LEDs. The direction of an image displayed by the LEDs is switchable. | 10-29-2009 |
| 20090273280 | LUMINESCENT DEVICE - Interfaces between layers in a light emitting element are eliminated by using a light emitting element with a mixed region comprising a hole transporting material and an electron transporting material. The light emitting element may further comprise a region with a dopant. By using this light emitting element, an organic luminescent element of low power consumption and long life is achieved, and the light emitting element can be used to manufacture a luminescent device and an electric appliance. | 11-05-2009 |
| 20090277504 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - Higher conversion efficiency and productivity of photoelectric conversion devices. A semiconductor layer including a first and second crystal regions grown in the layer-deposition direction is provided between an impurity semiconductor layer containing an impurity element imparting one conductivity type and an impurity semiconductor layer containing an impurity element imparting a conductivity type opposite to the one conductivity type. The first crystal region is grown from the interface between one of the impurity semiconductor layers and the semiconductor layer. The second crystal region is grown toward the interface between the semiconductor layer and the other of the impurity semiconductor layers from a position which is away from the interface between the one of the impurity semiconductor layers and the semiconductor layer. The semiconductor layer including the first and second crystal regions which exist in an amorphous structure forms the main part of a region for photoelectric conversion. | 11-12-2009 |
| 20090279012 | ELECTRONIC DEVICE AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate. | 11-12-2009 |
| 20090286445 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING LIGHT EMITTING DEVICE - It is an object of the present invention to provide a method for fabricating a light emitting device, in which brightness gradient due to potential drop of a counter electrode can be prevented from being observed and an auxiliary electrode can be formed without increasing the number of steps, even when the precision of a light emitting device is improved. It is another object of the invention to provide a light emitting device fabricated according to the method. The light emitting device has a light emitting element and an auxiliary electrode in each pixel. The light emitting element includes a first electrode, a second electrode, an electroluminescent layer provided between the first and the second electrodes. Further, the first electrode is overlapped with the electroluminescent layer and the second electrode formed over an insulating film by means of a first opening formed in the insulating film. Still further, the auxiliary electrode is overlapped with the second electrode by means of a second opening formed over the second insulating film. | 11-19-2009 |
| 20090290082 | Semiconductor Device and Fabrication Method Thereof - A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks. | 11-26-2009 |
| 20090291516 | Peeling Method and Method of Manufacturing Semiconductor Device - There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( | 11-26-2009 |
| 20090291536 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes. | 11-26-2009 |
| 20090291612 | ACTIVE MATRIX DISPLAY AND FORMING METHOD THEREOF - An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved. | 11-26-2009 |
| 20090293808 | Light-Emitting Device, Film-Forming Method and Manufacturing Apparatus Thereof, and Cleaning Method of the Manufacturing Apparatus - This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film. | 12-03-2009 |
| 20090293954 | Photoelectric Conversion Device And Method For Manufacturing The Same - A photoelectric conversion device and a method for manufacturing the same are provided. The photoelectric conversion device includes a first semiconductor layer including a first impurity element over a substrate, a second semiconductor layer including an amorphous layer and a crystal over the first semiconductor layer, and a third semiconductor layer including a second impurity element over the second semiconductor layer. The crystal penetrates between the first semiconductor layer and the third semiconductor layer. | 12-03-2009 |
| 20090295769 | ADHESION TYPE AREA SENSOR AND DISPLAY DEVICE HAVING ADHESION TYPE AREA SENSOR - A lightweight, thin, small size semiconductor device is provided. A pixel has a display portion, and a light receiving portion comprising a photodiode. A transistor is used with the semiconductor device for controlling the operation of the display portion and the-light receiving portion. | 12-03-2009 |
| 20090296470 | NONVOLATILE MEMORY - A highly-integrated nonvolatile memory. A memory cell array where plural memory cells are arranged in matrix in row and column directions, plural first and second word lines, and plural bit lines are included. Each of the plural memory cells includes a first memory transistor and a second memory transistor which are connected in series. A gate electrode of the first memory transistor is connected to the first word line, a gate electrode of the second memory transistor is connected to the second word line, one of source and drain regions of the first memory transistor is connected to the first bit line, and one of source and drain regions of the second memory transistor is connected to the second bit line. Each of the first bit line and the second bit line is provided in common for memory cells in columns which are adjacent to each other. | 12-03-2009 |
| 20090297694 | Deposition Method and Method for Manufacturing Light-Emitting Device - An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation. | 12-03-2009 |
| 20090298210 | LIGHT EMITTING DEVICE - An inexpensive light emitting device and inexpensive electric equipment are provided. A substrate on which a semiconductor element or a light emitting element is formed and a color filter are manufactured by separate manufacturing processes, and they are bonded to each other to complete the light emitting device. Thus, the yield of the light emitting device is improved and the manufacture period is shortened. | 12-03-2009 |
| 20090298377 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - All lights generated in an organic compound layer are not taken out towards a TFT from a cathode as a transparent electrode. For instance, the light is emitted in a lateral direction (direction parallel to the substrate surface) but the light emitted in the lateral direction is not taken out resultantly, which leads to a loss. Therefore, a light emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator ( | 12-03-2009 |
| 20090302339 | Light Emitting Device, Semiconductor Device, and Method of Fabricating the Devices - A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate. | 12-10-2009 |
| 20090314203 | DROP DISCHARGE APPARATUS, METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a substrate. In addition, it provides a drop discharge apparatus which is capable of improving drop position accuracy after it was landed. Further, it provides a method for manufacturing a semiconductor device which uses the drop discharge apparatus of this invention. | 12-24-2009 |
| 20090315032 | DISPLAY DEVICE - A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planarization layer and at the same time, adapted to suppress diffusion of moisture or degassing components from the planarization layer. The display device adopts a device structure effective in reducing the plasma damage on the planarization layer by devising a positional relationship between the planarization layer and the barrier layer. Also, in combination with a novel structure as a structure for a pixel electrode, effects such as an increase in luminance can be provided as well. | 12-24-2009 |
| 20090315085 | SEMICONDUCTOR DEVICE - In order to realize a higher reliability TFT and a high reliability semiconductor device, an NTFT of the present invention has a channel forming region, n-type first, second, and third impurity regions in a semiconductor layer. The second impurity region is a low concentration impurity region that overlaps a tapered potion of a gate electrode with a gate insulating film interposed therebetween, and the impurity concentration of the second impurity region increases gradually from the channel forming region to the first impurity region. And, the third impurity region is a low concentration impurity region that does not overlap the gate electrode. | 12-24-2009 |
| 20090315111 | SEMICONDUCTOR DEVICE HAVING BURIED OXIDE FILM - An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region. | 12-24-2009 |
| 20090321737 | THIN FILM TRANSISTOR - A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 12-31-2009 |
| 20090321743 | THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced. | 12-31-2009 |
| 20090321753 | Light Emitting Device and Method of Manufacturing the Same - There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line. | 12-31-2009 |
| 20090322698 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance. | 12-31-2009 |
| 20100007632 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, which includes a display portion and a driver circuit portion configured to drive the display portion. The display portion includes a first pixel electrode, a second pixel electrode, a plurality of photo sensors between the first pixel electrode and the second pixel electrode, and a plurality of color filters. The driver circuit portion includes a transistor including a single crystal semiconductor layer. | 01-14-2010 |
| 20100015764 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern or a semi-transmitting film and has a function of reducing light intensity is employed in a photolithography step of forming a gate electrode, an asymmetrical resist pattern having a region with a thick thickness and a region with a thickness thinner than that of the above region on one side is formed, a gate electrode having a stepped portion is formed, and an LDD region is formed in a self-alignment manner by injecting an impurity element to the semiconductor layer through the region with a thin thickness of the gate electrode. | 01-21-2010 |
| 20100018457 | FILM FORMING APPARATUS AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel, portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressurized to reach a pressure equal to or higher than the atmospheric pressure, and the printing chamber is filled with inert gas or set to a solvent atmosphere. Thus the difficulty in forming an EL layer by printing is eliminated. | 01-28-2010 |
| 20100021624 | Film Formation Apparatus and Method for Forming a Film - An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased. | 01-28-2010 |
| 20100025678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained. | 02-04-2010 |
| 20100025688 | SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME - Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer, a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion. | 02-04-2010 |
| 20100029025 | Production Apparatus and Method of Producing a Light-Emitting Device by Using the Same Apparatus - The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°. | 02-04-2010 |
| 20100029029 | Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. | 02-04-2010 |
| 20100029058 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere. | 02-04-2010 |
| 20100032666 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, a buffer layer over the source electrode layer and the drain electrode layer, and a semiconductor layer over the buffer layer. A part of the semiconductor layer overlapping with the gate electrode layer is over and in contact with the gate insulating layer and is provided between the source electrode layer and the drain electrode layer. The semiconductor layer is an oxide semiconductor layer containing indium, gallium, and zinc. The buffer layer contains a metal oxide having n-type conductivity. The semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layer. | 02-11-2010 |
| 20100034963 | LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - As the screen size becomes larger, it is required to make the device achieve higher definition, higher open area ratio, and higher reliability. Further, requirements for improvements in productivity and cost minimization are also increased. In the present invention, a substrate is pasted with a counter substrate after the liquid crystal material | 02-11-2010 |
| 20100035371 | Method for Fabricating Light Emitting Device - By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate. | 02-11-2010 |
| 20100035424 | Semiconductor Device and Fabrication Method Thereof - A hydrogenation method that utilizes plasma directly exposes a crystalline semiconductor film to the plasma, and therefore involves the problem that the crystalline semiconductor film is damaged by the ions generated simultaneously in the plasma. If a substrate is heated to 400° C. or above to recover this damage, hydrogen is re-emitted from the crystalline semiconductor film. | 02-11-2010 |
| 20100045578 | DISPLAY DEVICE - The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature. | 02-25-2010 |
| 20100060620 | Display System and Electrical Appliance - A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements. | 03-11-2010 |
| 20100060811 | LIQUID CRYSTAL DISPLAY AND METHOD OF DRIVING SAME - There is disclosed a lightweight and small liquid crystal display which achieves low power consumption and in which the optical anisotropy of the liquid crystal material is compensated for in order to enhance the viewing angle characteristics and the response speed of the liquid crystal material. Display electrodes and a common electrode are formed on one of the substrates. The orientation of the liquid crystal material is of the HAN (hybrid alignment nematic) type. This compensates for the optical anisotropy of the liquid crystal material and improves the response speed. | 03-11-2010 |
| 20100066653 | DISPLAY DEVICE AND ELECTRONIC DEVICE - It is an object of the present invention to provide a display device in which images can be seen under a dark place to intense external light. In the display device, display is performed by changing the gray scale number depending on external light intensity, and display modes can be switched depending on contents displayed on the screen. An analog mode and a digital mode are switched depending on external light intensity. In an analog digital switching circuit, when a video signal is an analog value, a signal is outputted to a pixel array without any change and, when the video signal is a digital value, the signal is outputted to a circuit that performs a digital operation such as a latch circuit. Consequently, display gray scales of a pixel are changed appropriately. Accordingly, a clear image can be displayed. For example, it is possible to ensure visibility in a wide range of a dark place or under indoor florescent light to outdoor sun light. | 03-18-2010 |
| 20100073272 | Display Device - In a display device having driving circuits formed on the same substrate where pixels are formed, the lateral frame area of the display device is reduced. A gate signal line driving circuit is placed in parallel with a source signal line driving circuit, so that no driving circuits are provided in at least two opposing directions out of four directions with respect to a pixel region. With the above-described structure, the area the gate signal line driving circuit occupies in prior art is removed to reduce the width (side to side) of the display device. Therefore a display device that has a small frame area in the lateral direction can be provided. | 03-25-2010 |
| 20100073406 | Display Device, and Driving Method and Electronic Apparatus of the Display Device - The present invention provides a driving method of a display device for expressing gray scales with n bits (n is an integer) by dividing one frame into a plurality of subframes. By this driving method, pseudo contours which occur in displaying images by a time gray scale method can be reduced. | 03-25-2010 |
| 20100079268 | Display Device and Vehicle - A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm safety even when it is difficult for the driver to visually recognize some of objects surrounding the vehicle, a liquid crystal display device or an EL display device is provided in the side mirror (door mirror), the back mirror (room mirror) or in an interior portion of the vehicle. A camera is mounted on the vehicle and an image from the camera is displayed on the display device. Further, information read from a sensor (distance measuring sensor) having the function of measuring the distance to another vehicle, and a sensor (impact sensor) having the function of sensing an externally applied impact force larger than a predetermined value is displayed on the display device. | 04-01-2010 |
| 20100079425 | DISPLAY DEVICE - A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit. | 04-01-2010 |
| 20100085283 | Light-Emitting Device and Electric Appliance - An inexpensive light emitting device capable of displaying a bright image and an electric appliance using the light emitting device. In the light emitting device having a pixel portion and a driver circuit formed on one insulating member, all of semiconductor elements for the pixel portion and the driver circuit are formed by n-channel semiconductor elements, thereby enabling the manufacturing process to be simplified. Each of light-emitting elements provided in the pixel portion emits light in such a direction that most of the light travels away from the insulating member, so that substantially the whole of the pixel-forming segment electrode (corresponding to a cathode of an EL element) is formed as an effective light-emitting area. Therefore, a low-priced light-emitting device capable of displaying a bright image can be obtained. | 04-08-2010 |
| 20100090125 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND LASER IRRADIATION APPARATUS - According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave. | 04-15-2010 |
| 20100094555 | LIGHT EMITTING DEVICE, DRIVING SUPPORT SYSTEM, AND HELMET - It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer. | 04-15-2010 |
| 20100096637 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - Off current of a thin film transistor is reduced, and on current of the thin film transistor is increased, and variation in electric characteristics is reduced. As a structure of semiconductor layers which form a channel formation region of a thin film transistor, a first semiconductor layer including a plurality of crystalline regions is provided on a gate insulating layer side; a second semiconductor layer having an amorphous structure is provided on a source region and drain region side; an insulating layer with a thickness small enough to allow carrier travel is provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is in contact with the gate insulating layer. The second semiconductor layer is provided on an opposite side to a face of the first semiconductor layer which is in contact with the gate insulating layer. | 04-22-2010 |
| 20100099227 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity. | 04-22-2010 |
| 20100104147 | SYSTEM AND METHOD FOR IDENTIFYING AN INDIVIDUAL - The present invention provides a system for identifying an individual provided with a portable communication device. In a system for identifying an individual using a portable communication device with a display, the display is a sensor-incorporated display, the sensor-incorporated display reads the biological information of a user, and, based on the read information, identifies an individual. | 04-29-2010 |
| 20100117073 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers. | 05-13-2010 |
| 20100117077 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ | 05-13-2010 |
| 20100117991 | IMAGE INPUT-OUTPUT DEVICE - An image input-output device includes a pixel which displays an image and reads an image. The pixel includes a photodetector element, a color layer, and a display element. The color layer is provided over the photodetector element and the display element is provided over the color layer, so that the distance between the photodetector element and the color layer is reduced. Accordingly, light is likely to enter the predetermined photodetector element through the predetermined color layer, and thus, even a color object can be read correctly. | 05-13-2010 |
| 20100123160 | Light-Emitting Device, Method for Manufacturing the Same, and Cellular Phone - The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a front side and in an upper portion in the longitudinal direction of the housing. | 05-20-2010 |
| 20100124796 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer. | 05-20-2010 |
| 20100127261 | THIN FILM TRANSISTOR - The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer. | 05-27-2010 |
| 20100129528 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gale electrodes. The pixel unit further includes a contrast media foamed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible. | 05-27-2010 |
| 20100136782 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a manufacturing process of a semiconductor device, electroplating and CMP have had a problem of increase in manufacturing costs for forming a wiring. Correspondingly, an opening is formed in a porous insulating film after a mask is formed thereover, and a conductive material containing Ag is dropped into the opening. Further, a first conductive layer is formed by baking the conductive material dropped into the opening by selective irradiation with laser light. Subsequently, a metal film is formed over the entire surface by sputtering, and the mask is removed thereafter to have only the metal film remain over the first conductive layer, thereby forming an embedded wiring layer formed with a stack of the first conductive layer containing Ag and the second conductive layer (metal film). | 06-03-2010 |
| 20100140607 | Light Emitting Element and Light Emitting Device Using the Element - An object of the present invention is to provide a high-efficiency white light emitting element having a spectrum in a wide wavelength range. Another object is to provide a white light emitting element in which chromaticity of white color is hard to change over time. Still another object is to provide a white light emitting element in which the shape of an emission spectrum does not tend to depend on current density. A first light emitting element | 06-10-2010 |
| 20100148175 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more. | 06-17-2010 |
| 20100149286 | PRINTING DEVICE AND METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE - A first pressure generating chamber, which is sealed by a first elastic plate mounted with a first piezoelectric element at one surface, and a second pressure generating chamber, which is sealed by a second elastic plate mounted with a second piezoelectric element at one surface are formed in a casing. The second pressure generating chamber is formed with an opening which is a discharge port. A mixture is discharged from the discharge port. A nozzle formed with an opening jets gas toward a substrate surface, and is provided in the vicinity of the discharge port of the ink head. | 06-17-2010 |
| 20100151607 | Liquid Crystal Electro-Optic Device - In a horizontal electric field drive type liquid crystal electro-optic device wherein a liquid crystal material is driven by controlling the strength of an electric field parallel to a substrate, noncontinuity of the electric field strength around each pixel electrode is minimized and thereby the occurrence of flaws in the orientation of the liquid crystal material and dispersion in operation are reduced and a construction having improved display characteristics and a method of manufacturing the same are provided. In a horizontal electric field drive type liquid crystal electro-optic device wherein a gate electrode | 06-17-2010 |
| 20100151634 | Display Device - At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied. | 06-17-2010 |
| 20100156287 | LIGHT EMITTING DEVICE - A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content can be obtained. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer. Alternatively, the light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is to constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer, wherein the inorganic compound layer is formed so as to cover the end face of the lamination layer. In the present invention, the lamination layer is formed on the primary surface of the plastic substrate, so that a flexible substrate structure can be obtained while preventing the substrate from deterioration with the transmission of oxygen or moisture content. | 06-24-2010 |
| 20100157165 | Method of Manufacturing a Semiconductor Device - The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming. | 06-24-2010 |
| 20100157404 | LASER TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A laser treatment apparatus is provided which is capable of irradiating a laser beam to the position where a TFT is to be formed over the entire surface of a large substrate to achieve the crystallization, thereby forming a crystalline semiconductor film having a large grain diameter with high throughput. A laser treatment apparatus includes a laser oscillation device, a lens for converging a laser beam, such as a collimator lens or a cylindrical lens, a fixed mirror for altering an optical path for a laser beam, a first movable mirror for radially scanning a laser beam in a two-dimensional direction, and an fθ lens for keeping a scanning speed constant in the case of laser beam scanning. These structural components are collectively regarded as one optical system. A laser treatment apparatus shown in FIG. | 06-24-2010 |
| 20100159124 | FILM-FORMING APPARATUS, METHOD OF CLEANING THE SAME, AND METHOD OF MANUFACTURING A LIGHT-EMITTING DEVICE - A cleaning method of removing a vapor-deposition material adhering to equipments without exposure to the atmosphere is provided. A vapor-deposition material adhering to equipments (components of a film-forming apparatus) such as a substrate holder, a vapor-deposition mask, a mask holder, or an adhesion preventing shield provided in a film-forming chamber are subjected to heat treatment. Because of this, the adhering vapor-deposition material is re-sublimated, and removed by exhaust through a vacuum pump. By including such a cleaning method in the steps of manufacturing an electro-optical device, the manufacturing steps are shortened, and an electro-optical device with high reliability can be realized. | 06-24-2010 |
| 20100163859 | LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films. | 07-01-2010 |
| 20100163867 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed. | 07-01-2010 |
| 20100171138 | Light Emitting Device and Electronic Device - Thinned and highly reliable light emitting elements are provided. Further, light emitting devices in which light emitting elements are formed over flexible substrates are manufactured with high yield. One light emitting device includes a flexible substrate, a light emitting element formed over the flexible substrate, and a resin film covering the light emitting element, and in the light emitting element, an insulating layer serving as a partition has a convex portion and the convex portion is embedded in the resin film, that is, the resin film covers an entire surface of the insulating layer and an entire surface of the second electrode, whereby the light emitting element can be thinned and highly reliable. In addition, a light emitting device can be manufactured with high yield in a manufacturing process thereof. | 07-08-2010 |
| 20100173480 | LASER ANNEALING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a step using the laser annealing method. While moving a substrate at a constant rate between 20 and 200 cm/s, a laser beam is radiated aslant to a semiconductor film on a surface of the semiconductor substrate. Therefore, it is possible to radiate a uniform laser beam to even a semiconductor film on a large-sized substrate and to thereby manufacture a semiconductor device for which the generation of a concentric pattern is prevented or decreased. By condensing a plurality of laser beams into one flux, it is possible to prevent or decrease the generation of a concentric pattern and to thereby improve the reliability of the semiconductor device. | 07-08-2010 |
| 20100176720 | DISPLAY DEVICE, ELECTRONIC APPARATUS, AND METHOD OF FABRICATING THE DISPLAY DEVICE - It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured. | 07-15-2010 |
| 20100181592 | Semiconductor Device and Method of Manufacturing Same - A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction. | 07-22-2010 |
| 20100193788 | AREA SENSOR AND DISPLAY APPARATUS PROVIDED WITH AN AREA SENSOR - An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light. | 08-05-2010 |
| 20100194275 | EL Display Device and Manufacturing Method Thereof - Reducing the manufacturing cost of an EL display device and an electronic device furnished with the EL display device is taken as an objective. A textured structure in which projecting portions are formed on the surface of a cathode is used. External stray light is diffusely (irregularly) reflected by the action of the projecting portions when reflected by the surface of the cathode, and therefore a defect in which the face of an observer or the surrounding scenery is reflected in the surface of the cathode can be prevented. This can be completed without using a conventionally necessary high price circular polarizing film, and therefore it is possible to reduce the cost of manufacturing the EL display device. | 08-05-2010 |
| 20100201260 | LIGHT EMITTING DEVICE - When a light emitting element is actuated to allow the light emission, the generation of Joule heat occurs, leading to the decomposition or crystallization of an organic compound to cause the degradation of the light emitting device. Therefore, a light emitting element of the present invention is provided for effecting removing or decreasing the generation of heat. In the present invention, between two electrodes, layers having organic compounds and carbon-based thin films are alternatively laminated one after another for stepping down the driving voltage in the light emitting element using the tunnel effect. In addition, a carbon-based thin film is placed on a film containing an organic compound, so that it prevents the electric filed from being locally concentrated and also prevents the generation of short-circuit between the anode and the cathode. | 08-12-2010 |
| 20100201661 | Semiconductor Device and Display Device - If misalignment in a line width direction of an electrode (pad) of a connection terminal is caused in attachment of a substrate and an FPC, a connection area of the FPC terminal and the connection terminal becomes smaller and contact resistance is increased. In particular, an increase in contact resistance of the connection terminal to which a power supply potential serving as a power source is inputted is a cause of defective display. In view of the above, an object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other. | 08-12-2010 |
| 20100201662 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride. | 08-12-2010 |
| 20100209784 | Power Storage Device - An embodiment of the present invention relates to a power storage device which includes a positive electrode having a positive-electrode current collector with a plurality of first projections, a first insulator provided over each of the plurality of first projections, and a positive-electrode active material provided on a surface of the first insulator and the positive-electrode current collector with the plurality of first projections; a negative electrode having a negative-electrode current collector with a plurality of second projections, a second insulator provided over each of the plurality of second projections, and a negative-electrode active material provided on a surface of the second insulator and the negative-electrode current collector with the plurality of second projections; a separator provided between the positive electrode and the negative electrode; and an electrolyte provided in a space between the positive electrode and the negative electrode and containing carrier ions. | 08-19-2010 |
| 20100220123 | Display Device - An object of the present invention is to provide a display device which enables multi-gray scale display without complicating the structure of D/A converter circuit. | 09-02-2010 |
| 20100221855 | Light Emitting Device and Method of Manufacturing the Same - In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film ( | 09-02-2010 |
| 20100224934 | DISPLAY DEVICE - The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern. | 09-09-2010 |
| 20100227228 | Power Storage Device - The present invention relates to a power storage device including: a positive electrode having a positive-electrode current collector, a positive-electrode active material with a plurality of first projections on the positive-electrode current collector, and a first insulator on an end of each of the plurality of first projections; a negative electrode having a negative-electrode current collector, a negative-electrode active material with a plurality of second projections on a surface of the negative-electrode current collector, and a second insulator on an end of each of the plurality of second projections; a separator between the positive electrode and the negative electrode; and an electrolyte provided in a space between the positive electrode and the negative electrode and containing carrier ions. In each of the first projections and the second projections, a ratio of the height to the width is 3 or more and 1000 or less to 1, i.e. (3 to 1000):1. | 09-09-2010 |
| 20100230664 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator ( | 09-16-2010 |
| 20100230669 | Display Device and Method for Manufacturing Thereof - It is a problem to provide an electric apparatus less in consumption power and long in life by the manufacture using the display device. An insulating bank is provided in a form surrounding the pixel portions on first electrodes over a substrate. The entire surface is applied, by a wet scheme (method), with an organic conductive film which has a thickness form of T | 09-16-2010 |
| 20100233358 | Manufacturing Method of Emitting Device - The present invention is a fabrication method of a light-emitting device characterized by ejecting a solution containing a luminescent material toward an anode or a cathode under a reduced pressure and characterized in that in a duration before the solution is arrived at the anode or the cathode, the solvent in the solution is volatilized, the remaining part of the luminescent material is deposited on the anode or the cathode, and thereby formed a light-emitting layer. By the present invention, a baking process for thickness reduction is not required after applying the solution. Accordingly, it is possible to provide a fabrication method with high throughput although the method is low in cost and simple. | 09-16-2010 |
| 20100236691 | Manufacturing Apparatus and Manufacturing Method of Lighting Device - A manufacturing apparatus of a lighting device, including a vacuum chamber, an exhaust system by which the vacuum chamber is set to a reduced-pressure state, and a transfer chamber from which a substrate is transferred to the vacuum chamber is provided. The vacuum chamber of the manufacturing apparatus includes a plurality of deposition chambers in which a first electrode, a first light-emitting unit including at least a light-emitting layer, an intermediate layer, a second light-emitting unit including at least a light-emitting layer, a second electrode, a sealing film are formed, and a substrate transfer means by which the substrate is sequentially transferred to the deposition chambers. | 09-23-2010 |
| 20100237373 | Lighting Device - An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate). | 09-23-2010 |
| 20100237774 | Lighting Device - To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated. | 09-23-2010 |
| 20100237805 | Lighting Device - To provide a lighting device in which the luminance of an EL element is maintained even when the EL element deteriorates so that degradation of the lighting device is reduced, the lighting device includes a surface light source portion including an organic EL element, and a control circuit portion provided in a base portion. The control circuit portion counts a lighting time of the organic EL element and controls the luminance of the organic EL element in accordance with the lighting time. Accordingly, the lighting device in which the luminance of an EL element is maintained regardless of degradation of the EL element so that degradation of the lighting device is reduced can be provided. | 09-23-2010 |
| 20100239746 | Manufacturing Apparatus - It is an object of the present invention to provide a manufacturing apparatus that reduces a manufacturing cost by enhancing efficiency in the use of an EL material and that is provided with a vapor deposition apparatus which is one of manufacturing apparatuses superior in uniformity in forming an EL layer and in throughput in the case of manufacturing a full-color flat panel display using emission colors of red, green, and blue. According to one feature of the invention, a mask having a small opening with respect to a desired vapor deposition region is used, and the mask is moved accurately. Accordingly, a desired vapor deposition region is vapor deposited entirely. In addition, a vapor deposition method is not limited to movement of a mask, and it is preferable that a mask and a substrate move relatively, for example, the substrate may be moved at a μm level with the mask fixed. | 09-23-2010 |
| 20100240157 | DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND TELEVISION RECEIVER - The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode. | 09-23-2010 |
| 20100244003 | Semiconductor Device and Light-Emitting Device - The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer. | 09-30-2010 |
| 20100247747 | Film Deposition Apparatus, Method for Depositing Film, and Method for Manufacturing Lighting Device - A first evaporation source is disposed such that one predetermined film deposition material is deposited on one region of a substrate; a second evaporation source is disposed such that another predetermined film deposition material is deposited on another region of the substrate; and the substrate is spun such that different materials are contained at a predetermined proportion on a film-deposition surface of the substrate. By disposing the plurality of evaporation sources at different positions, a thin film in which a plurality of materials are mixed, a thin film in which a plurality of materials are arranged in a grid pattern, or a thin film in which a plurality of monomolecular layers are stacked in a film thickness direction (the state can also be substantially called a super multi-monomolecular-layers) can be formed. | 09-30-2010 |
| 20100248444 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured. | 09-30-2010 |
| 20100252825 | Light-Emitting Device and Electronic Devices - The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention. | 10-07-2010 |
| 20100253478 | DATA PROCESSING DEVICE, IC CARD AND COMMUNICATION SYSTEM - An object is to provide a data processing device which achieves multiple functions or easy additional providing of a function while suppressing adverse influence on a communication distance or to improve resistance to electrostatic discharge in the data processing device. The data processing device includes an antenna which transmits and receives a first signal to/from a first terminal device through wireless communication, an integrated circuit which executes a process in accordance with the first signal, and a terminal portion which transmits and receives a second signal to/from a second terminal device and has an exposed conductive portion on its surface. A protection circuit is provided between at least one terminal of terminals of the terminal portion and a power supply terminal of a high potential and between the one terminal and a power supply terminal of a low potential. | 10-07-2010 |
| 20100255184 | Film Deposition Apparatus and a Method of Manufacturing a Light Emitting Device Using the Apparatus - To provide a film deposition apparatus capable of forming an EL element of high reliability. An oxidization cell ( | 10-07-2010 |
| 20100259548 | SEMICONDUCTOR DEVICE - The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique. | 10-14-2010 |
| 20100267179 | Method for Manufacturing Semiconductor Device - A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape. | 10-21-2010 |
| 20100276696 | Semiconductor Device and Method of Fabricating the Same - An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer. | 11-04-2010 |
| 20100277443 | Electronic Book - An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion. | 11-04-2010 |
| 20100282947 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer. | 11-11-2010 |
| 20100283067 | SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME - Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion. | 11-11-2010 |
| 20100283105 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer. | 11-11-2010 |
| 20100285624 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film. | 11-11-2010 |
| 20100285661 | SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME - Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor, a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion. | 11-11-2010 |
| 20100289026 | Method for Manufacturing Display Device - When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer. | 11-18-2010 |
| 20100289969 | IMAGE DISPLAY SYSTEM AND METHOD - An image display system comprises a first liquid crystal projector which projects a counterclockwise-rotating, circularly polarized light beam to form an image containing specific visual information on a screen and a second liquid crystal projector which projects a clockwise-rotating, circularly polarized light beam to form a white image on the same screen. When viewed with the naked eye, a combination of the two images projected on the screen appears totally white. A viewer wearing a dedicated viewing device equipped with an optical filter which allows counterclockwise-rotating, circularly polarized light to pass through can selectively see the image projected by the first liquid crystal projector. | 11-18-2010 |
| 20100293782 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability. | 11-25-2010 |
| 20100294535 | LIGHT-TRANSMITTING CONDUCTIVE FILM, DISPLAY DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-TRANSMITTING CONDUCTIVE FILM - An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film. | 11-25-2010 |
| 20100295052 | Light Emitting Device, Method of Manufacturing the Same, and Manufacturing Apparatus Therefor - A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision. | 11-25-2010 |
| 20100296343 | Non-Volatile Memory and Semiconductor Device - There is provided a non-volatile memory which enables high accuracy threshold control in a writing operation. In the present invention, a drain voltage and a drain current of a memory transistor are controlled to carry out a writing operation of a hot electron injection system, which is wherein a charge injection speed does not depend on a threshold voltage. FIGS. | 11-25-2010 |
| 20100301326 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost. | 12-02-2010 |
| 20100307557 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A multi junction photoelectric conversion device that can be manufactured by a simple method is provided. In addition, a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process is provided. A photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body, which firmly attaches and electrically connects the first cell and the second cell to each other. Accordingly, a multi-junction photoelectric conversion device in which semiconductor junctions are connected in series and sufficient electrical connection between p-i-n junctions is ensured can be provided. | 12-09-2010 |
| 20100307558 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - To provide a multi junction photoelectric conversion device which can be manufactured using a simple method. The photoelectric conversion device includes a first cell provided with a photoelectric conversion function, a second cell provided with a photoelectric conversion function, and a structure body having a function of fixing the first cell and the second cell to each other and electrically connecting the first cell and the second cell to each other. A multi junction photoelectric conversion device in which sufficient conductivity between p-i-n junctions is provided and semiconductor junctions are connected in series can be provided. With this structure, it is possible to obtain sufficient electromotive force. | 12-09-2010 |
| 20100307559 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process. The photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body which firmly attaches the first cell and the second cell. As a result, p-i-n junctions are bonded with the structure body in which the fibrous body is impregnated with an organic resin, which is a so-called prepreg. Thus, a photoelectric conversion device whose mechanical strength is increased can be realized while the manufacturing cost is reduced. | 12-09-2010 |
| 20100307590 | PHOTOELECTRIC CONVERSION DEVICE - The present invention provides a technique in which a cheap zinc oxide material can be used as a light-transmitting conductive film of a photoelectric conversion device. The present invention is a photoelectric conversion device including, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer, and a second impurity semiconductor layer having a conductivity type opposite to the first impurity semiconductor layer are sequentially stacked and a semiconductor junction is included. The first electrode or the second electrode includes conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum: the relative proportion of the zinc is less than or equal to 47 at. % and higher than that of the aluminum; and the relative proportion of the aluminum is higher than that of nitrogen. | 12-09-2010 |
| 20100311197 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern. | 12-09-2010 |
| 20100311212 | METHOD FOR PRODUCING DISPLAY DEVICE - In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers. | 12-09-2010 |
| 20100319188 | MANUFACTURING METHOD OF POWER STORAGE DEVICE - A safe method of manufacturing an electrode of a power storage device even when an alkali metal is used in forming the electrode. A negative electrode is manufactured by forming an alkali metal ion insertion/extraction layer which is a layer capable of alkali metal ion insertion and extraction on a surface of a current collector, forming an alkali metal film under reduced pressure on a surface of the alkali metal ion insertion/extraction layer, ionizing the alkali metal film, and impregnating the alkali metal ion insertion/extraction layer with the ionized alkali metal. | 12-23-2010 |
| 20100320484 | Light Emitting Device, Electronic Appliance, and Method for Manufacturing Light Emitting Device - To provide a light emitting device that has a structure in which a light emitting element is sandwiched by two substrates to prevent moisture from penetrating into the light emitting element, and a method for manufacturing thereof. In addition, a gap between the two substrates can be controlled precisely. In the light emitting device according to the present invention, an airtight space surrounded by a sealing material with a closed pattern is kept under reduced pressure by attaching the pair of substrates under reduced pressure. A columnar or wall-shaped structure is formed between light emitting regions inside of the sealing material, in a region overlapping with the sealing material, or in a region outside of the sealing material so that the gap between the pair of substrates can be maintained precisely. | 12-23-2010 |
| 20100326970 | Manufacturing Apparatus of Semiconductor Device and Method for Manufacturing Semiconductor Device - To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device. | 12-30-2010 |
| 20100328299 | LIGHT EMITTING DEVICE, DRIVING METHOD OF LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT. | 12-30-2010 |
| 20110001140 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit. | 01-06-2011 |
| 20110001146 | Light-Emitting Device, Lighting Device, and Electronic Device - It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained. | 01-06-2011 |
| 20110003427 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer. | 01-06-2011 |
| 20110003428 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere. | 01-06-2011 |
| 20110006305 | INFORMATION DEVICE - Problems exist in areas such as image visibility, endurance of the device, precision, miniaturization, and electric power consumption in an information device having a conventional resistive film method or optical method pen input function. Both EL elements and photoelectric conversion elements are arranged in each pixel of a display device in an information device of the present invention having a pen input function. Information input is performed by the input of light to the photoelectric conversion elements in accordance with a pen that reflects light by a pen tip. An information device with a pen input function, capable of displaying a clear image without loss of brightness in the displayed image, having superior endurance, capable of being miniaturized, and having good precision can thus be obtained. | 01-13-2011 |
| 20110006306 | LIGHT EMITTING DEVICE - A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving. | 01-13-2011 |
| 20110008930 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith. | 01-13-2011 |
| 20110012119 | Semiconductor Device and Method for Fabricating the Same - The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit | 01-20-2011 |
| 20110012131 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE - An object is to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide, and another object is to provide a semiconductor device using silicon carbide. A semiconductor substrate is manufactured through the steps of: adding ions to a silicon carbide substrate to form an embrittlement region in the silicon carbide substrate; bonding the silicon carbide substrate to a base substrate with insulating layers interposed therebetween; heating the silicon carbide substrate and separating the silicon carbide substrate at the embrittlement region to form a silicon carbide layer over the base substrate with the insulating layers interposed between therebetween; and performing heat treatment on the silicon carbide layer at a temperature of 1000° C. to 1300° C. to reduce defects of the silicon carbide layer. A semiconductor device is manufactured using the semiconductor substrate formed as described above. | 01-20-2011 |
| 20110012939 | Display Device and Driving Method Thereof - [Problem] In the case where variations of environmental temperature or variations with time occur depending on characteristics of a light-emitting element, variations are generated in luminance. In the invention, a display device for suppressing effects due to variations of a current value of a light-emitting element, which is caused by variations of environmental temperature and variations with time. | 01-20-2011 |
| 20110014730 | Method for Manufacturing Light Emitting Device - An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive. | 01-20-2011 |
| 20110018848 | Liquid Crystal Display Device and Method of Driving the Same - A liquid crystal display device with low power consumption is provided by using a driver circuit and a pixel that have novel circuit structures. In a liquid crystal display device using n (n is a natural number and satisfies n≧2) bit digital video signals to display an image, n×m (m is a natural number) memory circuits and n×k (k is a natural number) non-volatile memory circuits are provided in each pixel, thereby giving the device a function of storing m frames of digital video signals in the memory circuits and a function of storing k frames of digital video signals in the non-volatile memory circuits. Once stored in the memory circuits, the digital video signals are repeatedly read out for every new frame to display a still image, so that driving of a source signal line driver circuit can be stopped during still image display. Moreover, digital video signals stored in the non-volatile memory circuits are kept stored after power supply is shut off and hence the image of the stored data can immediately be displayed next time the display device is turned on. | 01-27-2011 |
| 20110024740 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced. | 02-03-2011 |
| 20110024750 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced. | 02-03-2011 |
| 20110024751 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed. | 02-03-2011 |
| 20110024757 | Semiconductor Device and Fabrication Method Thereof - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 02-03-2011 |
| 20110024787 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification. | 02-03-2011 |
| 20110025729 | FIELD SEQUENTIAL LIQUID CRYSTAL DISPLAY DEVICE AND DRIVING METHOD THEREOF, AND HEAD MOUNTED DISPLAY - A display with high resolution and reduced flicker of image. The driving method of this invention, or the field sequential driving method, divides one frame of image into a plurality of subframes, i.e., divides the period of one image frame into a plurality of subframe periods; displays red, green and blue images during the corresponding subframe periods; and, when these color images are to be displayed, turns on the corresponding red, green and blue backlights successively to feed light to the display section. | 02-03-2011 |
| 20110027980 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer. | 02-03-2011 |
| 20110030783 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type. | 02-10-2011 |
| 20110031491 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided. | 02-10-2011 |
| 20110031493 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer. | 02-10-2011 |
| 20110031495 | Liquid Crystal Display Device, Electronic Device Having the Same, and Manufacturing Method of the Same - A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm. | 02-10-2011 |
| 20110033988 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film. | 02-10-2011 |
| 20110035798 | SYSTEM FOR IDENTIFYING AN INDIVIDUAL, A METHOD FOR IDENTIFYING AN INDIVIDUAL OR A BUSINESS METHOD - An individual may be identified by using a portable communication device. Biological information of the user is input into the communication device. The inputted biological information of the user is checked with reference biological information previously stored in the portable communication device. The portable communication device is connected to the Internet after the inputted biological information of the user and the reference biological information have matched. Then information that the inputted biological information of the user and the reference biological information have matched is transmitted to a server from the portable communication device. | 02-10-2011 |
| 20110037061 | Light Emitting Device, Electronic Equipment and Apparatus For Manufacturing the Same - To provide an aspect of a novel display device using a light emitting element which is composed of a cathode, an EL layer and an anode, and a manufacturing device of the display device. According to the present invention, dual-sided emission display can be performed in one sheet white color light emitting panel | 02-17-2011 |
| 20110037068 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer. | 02-17-2011 |
| 20110039402 | METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR - A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method. | 02-17-2011 |
| 20110042679 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 02-24-2011 |
| 20110042768 | Semiconductor Device and Method for Manufacturing Semiconductor Device - An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching. | 02-24-2011 |
| 20110049522 | SEMICONDUCTOR DISPLAY DEVICE - It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially is by etching to expose an active layer of the TFT. | 03-03-2011 |
| 20110053311 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - Provided is a technique for manufacturing a photoelectric conversion element using a dense crystalline semiconductor film without a cavity between crystal grains. A method of manufacturing a photoelectric conversion device having a first electrode, a unit cell, and a second electrode over a substrate includes the steps of: forming a plasma region between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a chamber of a plasma CVD apparatus is set to from 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to from 1 mm to 20 mm, preferably, 4 mm to 16 mm; forming deposition precursors including a crystalline semiconductor in a gas phase including the plasma region; forming a crystal nucleus having a grain size of from 5 nm to 15 nm by depositing the deposition precursors; and forming a semiconductor film having a first conductivity type, a semiconductor film effective in photoelectric conversion, or a semiconductor film having a first conductivity type in the unit cell, by growing a crystal from the crystal nucleus. | 03-03-2011 |
| 20110053357 | PLASMA CVD APPARATUS, METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A structure of a plasma CVD apparatus for forming a dense semiconductor film is provided. Further, a technique for forming a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains is provided. An electrode supplied with electric power for generating plasma is included in a reaction chamber of the plasma CVD apparatus. This electrode has a common plane on a surface opposite to a substrate, and the common plane is provided with depressed openings. Gas supply ports are provided on the bottom of the depressed openings or on the common plane of the electrode. The depressed openings are provided in isolation from one another. | 03-03-2011 |
| 20110053358 | METHOD FOR MANUFACTURING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus. | 03-03-2011 |
| 20110057188 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor. | 03-10-2011 |
| 20110062432 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer. | 03-17-2011 |
| 20110062436 | TRANSISTOR AND DISPLAY DEVICE - To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced. | 03-17-2011 |
| 20110062992 | LOGIC CIRCUIT, LIGHT EMITTING DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to obtain a desired threshold voltage of a thin film transistor using an oxide semiconductor. Another object is to suppress a change of the threshold voltage over time. Specifically, an object is to apply the thin film transistor to a logic circuit formed using a transistor having a desired threshold voltage. In order to achieve the above object, thin film transistors including oxide semiconductor layers with different thicknesses may be formed over the same substrate, and the thin film transistors whose threshold voltages are controlled by the thicknesses of the oxide semiconductor layers may be used to form a logic circuit. In addition, by using an oxide semiconductor film in contact with an oxide insulating film formed after dehydration or dehydrogenation treatment, a change in threshold voltage over time is suppressed and the reliability of a logic circuit can be improved. | 03-17-2011 |
| 20110068336 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H | 03-24-2011 |
| 20110068388 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced. | 03-24-2011 |
| 20110068852 | SEMICONDUCTOR DEVICE, POWER CIRCUIT, AND MANUFACTURING MKETHOD OF SEMICONDUCTOR DEVICE - The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer. | 03-24-2011 |
| 20110069047 | DISPLAY DEVICE - A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region. | 03-24-2011 |
| 20110070692 | HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a heat treatment apparatus in which a large-sized substrate can be rapidly heated and rapidly cooled with high uniformity, and a heat treatment method using the heat treatment apparatus. The heat treatment apparatus includes: a first chamber of which one side is opened; a second chamber of which one side is opened; a device for moving the first and the second chambers; a heating device; a gas introduction port; a gas exhaust port; and a jig for longitudinally fixing a substrate, in which the substrate is rapidly heated while the first and the second chambers are connected, and rapidly cooled by separating the chambers to move the substrate away from a heat storage portion of the heating device or the like. Further, the heat treatment method includes the heat treatment apparatus, and a method for manufacturing a semiconductor device using an oxide semiconductor is included. | 03-24-2011 |
| 20110073256 | SEMICONDUCTOR MANUFACTURING APPARATUS - Reduction in a space of a manufacturing line, improvement of efficiency, improvement of utilization efficiency of materials, additionally, reduction in the manufacturing cost is realized by applying a means for describing a wiring pattern or a resist pattern directly on a substrate, a means for locally performing a vapor phase process such as film formation or etching under atmospheric pressure or adjacent to atmospheric pressure. | 03-31-2011 |
| 20110073561 | METHOD FOR MANUFACTURING ELECTRODE FOR POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE - One of objects is to reduce the effect caused by the volume expansion of an active material. An embodiment is a method for manufacturing an electrode for a power storage device which includes an active material over one of surfaces of a current collector. The active material is formed by forming a conductive body functioning as the current collector; forming a mixed layer including an amorphous region and a microcrystalline region over one of surfaces of the conductive body; and etching the mixed layer selectively, so that a part of or the whole of the amorphous region is removed and the microcrystalline region is exposed. Thus, the effect caused by the volume expansion of the active material is reduced. | 03-31-2011 |
| 20110075038 | LIGHT EMITTING DEVICE AND PRODUCTION SYSTEM OF THE SAME - To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and data of a change over time of luminance of a light emitting element. Further, by correcting a video signal inputted to the light emitting device in conformity with a characteristic of the driving TFT of each pixel and a degree of a deterioration of the light emitting element based on the over-described two data, nonuniformity of luminance caused by a deterioration of an electroluminescent layer and nonuniformity of luminance caused by dispersion of a characteristic of the driving TFT are restrained. | 03-31-2011 |
| 20110080544 | LIQUID CRYSTAL DISPLAY DEVICE - In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material. | 04-07-2011 |
| 20110081747 | METHOD FOR REMOVING ELECTRICITY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to suppress a significant change in electrical characteristics of thin film transistors and a deviation thereof from the designed range due to static electricity, and to improve the yield in manufacturing semiconductor devices. In order to prevent a substrate from being charged with static electricity by heat treatment or to favorably reduce static electricity with which a substrate is charged in a manufacturing process of a semiconductor device, heat treatment is performed with a substrate provided with a thin film transistor stored in a conductive container. In addition, a heating apparatus for performing the heat treatment is electrically connected to a ground potential, and the container and the substrate are also electrically connected to the ground potential. | 04-07-2011 |
| 20110084266 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced. | 04-14-2011 |
| 20110084267 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 04-14-2011 |
| 20110084268 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed. | 04-14-2011 |
| 20110084269 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers. In this stack of layers, a layer in contact with the oxide semiconductor layer is a thin indium layer or a thin indium-alloy layer. Note that the oxide semiconductor layer contains indium. A second layer or second and any of subsequent layers in the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 04-14-2011 |
| 20110084270 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide a thin film transistor including an oxide semiconductor layer, in which a material used for the oxide semiconductor layer and a material used for source and drain electrode layers are prevented from reacting with each other. The source and drain electrode layers provided over a substrate having an insulating surface have a stacked structure of two or more layers. In the stack of layers, a layer which is in contact with an oxide semiconductor layer is a metal layer including a metal element other than a metal element included in the oxide semiconductor layer. An element selected from Sn, Sb, Se, Te, Pd, Ag, Ni, and Cu; an alloy containing any of these elements as a component; an alloy containing any of these elements in combination; or the like is used for a material of the metal layer used. | 04-14-2011 |
| 20110084272 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode. | 04-14-2011 |
| 20110084273 | SEMICONDUCTOR DEVICE - One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours. | 04-14-2011 |
| 20110084337 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As for a semiconductor device which is typified by a display device, it is an object to provide a highly reliable semiconductor device to which a large-sized or high-definition screen is applicable and which has high display quality and operates stably. By using a conductive layer including Cu as a long lead wiring, an increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased. | 04-14-2011 |
| 20110086569 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A step of forming wiring using first solution ejection means for ejecting a conductive material, a step of forming a resist mask on the wiring using second solution ejection means, and a step of etching the wiring using an atmospheric-pressure plasma device having linear plasma generation means or an atmospheric-pressure plasma device having a plurality of linearly-arranged plasma-generation-means using the resist mask as a mask are included. | 04-14-2011 |
| 20110089414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 04-21-2011 |
| 20110089419 | SEMICONDUCTOR DEVICE - An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate. | 04-21-2011 |
| 20110089811 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed. | 04-21-2011 |
| 20110089927 | VOLTAGE REGULATOR CIRCUIT - A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×10 | 04-21-2011 |
| 20110090006 | ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 04-21-2011 |
| 20110095312 | Semiconductor Device and Method of Manufacturing the Same - An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. | 04-28-2011 |
| 20110097834 | THIN FILM TRANSISTOR, DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole. | 04-28-2011 |
| 20110100688 | Electro-Optical Device and Method of Manufacturing the Same - In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple. | 05-05-2011 |
| 20110101322 | Organic Light Emitting Element and Display Device Using the Element - A hole transporting region made of a hole transporting material, an electron transporting region made of an electron transporting material, and a mixed region (light emitting region) in which both the hole transporting material and the electron transporting material are mixed and which is doped with a triplet light emitting material for red color are provided in an organic compound film, whereby interfaces between respective layers which exist in a conventional lamination structure are eliminated, and respective functions of hole transportation, electron transportation, and light emission are exhibited. In accordance with the above-mentioned method, the organic light emitting element for red color can be obtained in which power consumption is low and a life thereof is long. Thus, the display device and the electric device are manufactured by using the organic light emitting element. | 05-05-2011 |
| 20110101331 | SEMICONDUCTOR DEVICE - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized. | 05-05-2011 |
| 20110101336 | POWER DIODE, RECTIFIER, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - With a non-linear element (e.g., a diode) with small reverse saturation current, a power diode or rectifier is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode and having a concentration of hydrogen of 5×10 | 05-05-2011 |
| 20110101337 | TRANSISTOR - To provide a thin film transistor which has high operation speed and in which a large amount of current can flow when the thin film transistor is on and off-state current at the time when the thin film transistor is off is extremely reduced. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen or an OH group contained in the oxide semiconductor is removed so that hydrogen is contained in the oxide semiconductor at a concentration of lower than or equal to 5×10 | 05-05-2011 |
| 20110101338 | NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×10 | 05-05-2011 |
| 20110101339 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer. | 05-05-2011 |
| 20110101351 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device capable of functioning as a memory device. The memory device comprises a plurality of memory cells, and each of the memory cells contains a first transistor and a second transistor. The first transistor is provided over a substrate containing a semiconductor material and has a channel formation region in the substrate. The second transistor has an oxide semiconductor layer. The gate electrode of the first transistor and one of the source and drain electrodes of the second transistor are electrically connected to each other. The extremely low off current of the second transistor allows the data stored in the memory cell to be retained for a significantly long time even in the absence of supply of electric power. | 05-05-2011 |
| 20110101355 | NON-LINEAR ELEMENT, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode. | 05-05-2011 |
| 20110101356 | TRANSISTOR - It is an object to provide a thin film transistor with high speed operation, in which a large amount of current can flow when the thin film transistor is on and off-state current is extremely reduced when the thin film transistor is off. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen is contained in an oxide semiconductor at a concentration of lower than or equal to 5×10 | 05-05-2011 |
| 20110101367 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable III can be obtained. | 05-05-2011 |
| 20110101942 | VOLTAGE REGULATOR CIRCUIT - A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode. | 05-05-2011 |
| 20110108833 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using a metal whose work function is lower than the work function of the oxide semiconductor layer or an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 05-12-2011 |
| 20110108834 | SEMICONDUCTOR DEVICE - An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like. | 05-12-2011 |
| 20110108842 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device in which variations in luminance due to variations in characteristics of transistors are reduced, and image quality degradation due to variations in resistance values is prevented. The invention comprises a transistor whose channel portion is formed of an amorphous semiconductor or an organic semiconductor, a connecting wiring connected to a source electrode or a drain electrode of the transistor, alight emitting element having a laminated structure which includes a pixel electrode, an electro luminescent layer, and a counter electrode, an insulating layer surrounding an end portion of the pixel electrode, and an auxiliary wiring formed in the same layer as a gate electrode of the transistor, a connecting wiring, or the pixel electrode. Further, the connecting wiring is connected to the pixel electrode, and the auxiliary wiring is connected to the counter electrode via an opening portion provided in the insulating layer. | 05-12-2011 |
| 20110108863 | METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL DEVICE - An object of the present invention is to provide an EL display device having high operation performance and reliability. | 05-12-2011 |
| 20110109591 | TOUCH PANEL AND DRIVING METHOD OF TOUCH PANEL - Disclosed is a touch panel including a plurality of pixels each including a display element and a photosensor. The display element includes a transistor having an oxide semiconductor layer. The photosensor includes a photodiode, a first transistor, and a second transistor, and the first and second transistors include an oxide semiconductor layer. A driving method of the touch panel is also disclosed by which high-speed imaging is realized. | 05-12-2011 |
| 20110109592 | DISPLAY DEVICE - The display device has a display panel where a photosensor and a transistor including an oxide semiconductor layer are arranged. The display device detects a shadow of the object, which is projected on the display panel when the object approaches the display panel and blocks ambient light, with a photosensor, whereby a position or motion of the object is detected. Even when the object is not in contact with the display panel, the object can be detected. | 05-12-2011 |
| 20110109604 | LIGHT-EMITTING DEVICE - There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs | 05-12-2011 |
| 20110109865 | Liquid Crystal Display Device - A height difference under a sealant is reduced in a case where lines are present under the sealant. | 05-12-2011 |
| 20110110145 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer. | 05-12-2011 |
| 20110111535 | METHOD FOR EVALUATING OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Many of the principles of an oxide semiconductor are still unclear and therefore there is no established method for evaluating an oxide semiconductor. Thus, an object is to provide a novel method for evaluating an oxide semiconductor. Carrier density is evaluated, and hydrogen concentration is also evaluated. Specifically, a MOS capacitor (a diode or a triode) is manufactured, and the C-V characteristics of the MOS capacitor are obtained. Then, the carrier density is estimated from the C-V characteristics obtained. | 05-12-2011 |
| 20110111558 | METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE, AND DEPOSITION APPARATUS - An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H | 05-12-2011 |
| 20110114480 | METHOD FOR PACKAGING TARGET MATERIAL AND METHOD FOR MOUNTING TARGET - It is an object to provide a method for packaging a target material with which a thin film that is less contaminated with an impurity in the air such as a compound containing a hydrogen atom can be formed. In addition, it is an object to provide a method for mounting a target with which a thin film that is less contaminated with an impurity can be formed. In order to achieve the objects, a target material in a target is not exposed to the air and kept sealed after being manufactured until a deposition apparatus on which the target is mounted is evacuated. | 05-19-2011 |
| 20110114943 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure and favorable characteristics. A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon. | 05-19-2011 |
| 20110114944 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR - One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×10 | 05-19-2011 |
| 20110114945 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode. | 05-19-2011 |
| 20110114999 | SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND TRANSISTOR - To provide a deposition technique for forming an oxide semiconductor film. An oxide semiconductor film is formed using a sputtering target which contains a sintered body of metal oxide and in which the concentration of hydrogen contained in the sintered body of metal oxide is, for example, as low as 1×10 | 05-19-2011 |
| 20110115839 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - A display device includes a pixel portion including a plurality of pixels each including a first transistor, a second transistor, and a light-emitting element, in which a gate of the first transistor is electrically connected to a scan line, one of a source and a drain of the first transistor is electrically connected to a signal line, and the other of them is electrically connected to a gate of the second transistor; one of a source and a drain of the second transistor is electrically connected to a power supply line and the other of them is electrically connected to the light-emitting element, and the first transistor includes an oxide semiconductor layer. A period when the display device displays a still image includes a period in which output of a signal to all the scan lines in the pixel portion is stopped. | 05-19-2011 |
| 20110116310 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address signal; a potential generating circuit which generates a writing potential and a plurality of reading potentials to supply to a writing circuit and a reading circuit; and a control circuit which selects one of a plurality of voltages for correction on a basis of results of the reading circuit comparing a potential of the bit line with the plurality of reading potentials. | 05-19-2011 |
| 20110121284 | TRANSISTOR - Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer. | 05-26-2011 |
| 20110121285 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer. | 05-26-2011 |
| 20110121286 | SEMICONDUCTOR DEVICE - It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes memory cells connected to each other in series and a capacitor. One of the memory cells includes a first transistor connected to a bit line and a source line, a second transistor connected to a signal line and a word line, and a capacitor connected to the word line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and one electrode of the capacitor are connected to one another. | 05-26-2011 |
| 20110121288 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor. | 05-26-2011 |
| 20110121289 | THIN FILM TRANSISTOR - A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal. | 05-26-2011 |
| 20110127524 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal. | 06-02-2011 |
| 20110127525 | SEMICONDUCTOR DEVICE - An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that the carrier concentration is less than 1×10 | 06-02-2011 |
| 20110127526 | NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE - A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×10 | 06-02-2011 |
| 20110128777 | SEMICONDUCTOR DEVICE - The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is formed on or in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer. | 06-02-2011 |
| 20110132260 | MANUFACTURING APPARATUS - A manufacturing apparatus is provided, which can improve a utilization efficiency of an evaporation material, reduce manufacturing costs of a light emitting device having an organic light emitting element, and shorten manufacturing time necessary to manufacture a light emitting device. According to the present invention, a multi-chamber manufacturing apparatus having plural film forming chambers includes a first film forming chamber for subjecting a first substrate to evaporation and a second film forming chamber for subjecting a second substrate to evaporation. In each film forming chamber, plural organic compound layers are laminated, thereby improving the throughput. Further, it is possible that the respective substrates in the plural film forming chambers are subjected to evaporation in the same manner in parallel, while another film forming chamber undergoes cleaning. | 06-09-2011 |
| 20110133181 | DISPLAY DEVICE - One object is to provide a transistor including an oxide semiconductor film which is used for the pixel portion of a display device and has high reliability. A display device has a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film over the first gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; a second gate insulating film over the source electrode, the drain electrode and the oxide semiconductor film; a second gate electrode over the second gate insulating film; an organic resin film having flatness over the second gate insulating film; a pixel electrode over the organic resin film having flatness, wherein the concentration of hydrogen atoms contained in the oxide semiconductor film and measured by secondary ion mass spectrometry is less than 1×10 | 06-09-2011 |
| 20110133635 | Display Device and Method of Fabricating the Display Device - In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented. | 06-09-2011 |
| 20110134142 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - An object is to reduce residual images and power consumption in a liquid crystal display device. The liquid crystal display device capable of inputting an image signal to a pixel portion selectively is provided. It is possible for the liquid crystal display device to input the image signal only to a region in which a fast-moving image is displayed. Therefore, residual images in displaying a moving image can be reduced. Further, in the liquid crystal display device, it is acceptable that the image signal is not input to a region in which a slow-moving image is displayed; accordingly, power consumption can be reduced. | 06-09-2011 |
| 20110134647 | ANTIREFLECTIVE FILM AND DISPLAY DEVICE - An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of external light which is incident on the antireflective film can be further reduced and a high-visibility display device having such an antireflective film. The tops of the plurality of pyramidal projections are evenly spaced and each side of the base of a pyramidal projection is in contact with one side of the base of an adjacent pyramidal projection. That is, one pyramidal projection is surrounded by other pyramidal projections, and the base of the pyramidal projection and the base of the adjacent pyramidal projection have a side in common. | 06-09-2011 |
| 20110134683 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device functioning as a multivalued memory device including: memory cells connected in series; a driver circuit selecting a memory cell and driving a second signal line and a word line; a driver circuit selecting any of writing potentials and outputting it to a first signal line; a reading circuit comparing a potential of a bit line and a reference potential; and a potential generating circuit generating the writing potential and the reference potential. One of the memory cells includes: a first transistor connected to the bit line and a source line; a second transistor connected to the first and second signal line; and a third transistor connected to the word line, bit line, and source line. The second transistor includes an oxide semiconductor layer. A gate electrode of the first transistor is connected to one of source and drain electrodes of the second transistor. | 06-09-2011 |
| 20110140099 | SEMICONDUCTOR DEVICE - One object is to provide a new semiconductor device whose standby power is sufficiently reduced. The semiconductor device includes a first power supply terminal, a second power supply terminal, a switching transistor using an oxide semiconductor material and an integrated circuit. The first power supply terminal is electrically connected to one of a source terminal and a drain terminal of the switching transistor. The other of the source terminal and the drain terminal of the switching transistor is electrically connected to one terminal of the integrated circuit. The other terminal of the integrated circuit is electrically connected to the second power supply terminal. | 06-16-2011 |
| 20110140120 | Semiconductor Device - It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO. | 06-16-2011 |
| 20110140598 | LIGHT-EMITTING DEVICE - It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide. | 06-16-2011 |
| 20110140997 | DISPLAY DEVICE - The present invention is intended to suppress power consumption of an EL display. In accordance with the brightness of an image to be displayed in a pixel portion, the contrast of the image is determined whether to be inverted or not, and the number of bits of the digital video signal to be input into the pixel portion is reduced, and the magnitude of a current to flow through the EL element is allowed to be maintained at a constant level even when a temperature of an EL layer changes by providing the EL display with another EL element to be used for monitoring a temperature. | 06-16-2011 |
| 20110141069 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - An object of one embodiment of the present invention is to provide a display device and a driving method of a display device in each of which power consumption can be sufficiently reduced even in the case of displaying a moving image. In the display device and the driving method of a display device, a display screen is divided into a plurality of sub-screens in a row direction (a direction of a gate line) and image data in sequential frame periods is compared for each of the sub-screens. Whether or not the image data is rewritten is controlled on the basis of results of the comparison. In other words, writing is performed only in a region of the screen where rewriting is needed. | 06-16-2011 |
| 20110141164 | Display Device, Electronic Device and Method of Driving Display Device - The present invention provides a display device which can display characters clearly and display images smoothly. An area gray scale method is adopted and a configuration of one pixel is changed depending on a mode, by selecting one or more display regions in each pixel. When characters are needed to be displayed clearly, one pixel is configured by selecting a stripe arrangement. Thus, clear display can be conducted. When images are needed to be displayed, one pixel is configured by selecting an indented state. Thus, smooth display can be conducted. | 06-16-2011 |
| 20110147737 | SEMICONDUCTOR DEVICE - A first transistor including a channel formation region, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode; a second transistor including an oxide semiconductor layer, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitor including one of the second source electrode and the second drain electrode, the second gate insulating layer, and an electrode provided to overlap with one of the second source electrode and the second drain electrode over the second gate insulating layer are provided. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other. | 06-23-2011 |
| 20110147739 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 06-23-2011 |
| 20110147750 | DISPLAY DEVICE - A resin material having a small relative dielectric constant is used as a layer insulation film | 06-23-2011 |
| 20110148835 | DISPLAY DEVICE INCLUDING OPTICAL SENSOR AND DRIVING METHOD THEREOF - An object is to provide a display device with low power consumption and good display quality. A first substrate is provided with a terminal portion, a pixel electrode, a switching transistor including an oxide semiconductor, a first optical sensor having high optical sensitivity to visible light, and a second optical sensor having optical sensitivity to infrared light and having lower optical sensitivity to visible light than the first optical sensor. The illuminance or color temperature around a display device is detected using the first and second optical sensors, and the luminance or color tone of a display image is adjusted. A second substrate is provided so as to face the first substrate, and is provided with a counter electrode. In a period for displaying a still image, the switching transistor is turned off so that the counter electrode is brought into a floating state. | 06-23-2011 |
| 20110151603 | LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer. | 06-23-2011 |
| 20110151618 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer. | 06-23-2011 |
| 20110156024 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 06-30-2011 |
| 20110156027 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor. | 06-30-2011 |
| 20110156028 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 06-30-2011 |
| 20110156117 | SEMICONDUCTOR DEVICE - An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other. | 06-30-2011 |
| 20110156580 | LIGHT EMITTING DEVICE - There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL element that emits red color, and a singlet compound is used for a light emitting layer of an EL element that emits green color and a light emitting layer of an EL element that emits blue color. Thus, an operation voltage of the EL element emitting red color may be made the same as the EL element emitting green color and the EL element emitting blue color. Accordingly, the color display with good color balance can be realized. | 06-30-2011 |
| 20110157216 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - To provide a liquid crystal display device which can perform image display in both modes: a reflective mode where external light is used as an illumination light source; and a transmissive mode where a backlight is used. In one pixel, a region where incident light through a liquid crystal layer is reflected to perform display (reflective region) and a region through which light from the backlight passes to perform display (transmissive region) are provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. In addition, two transistors connected to respective pixel electrode layers are provided in one pixel, and the two transistors are separately operated, whereby display of the reflective region and display of the transmissive region can be controlled independently. | 06-30-2011 |
| 20110157252 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed. | 06-30-2011 |
| 20110157253 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - An object is to provide a liquid crystal display device in which image display can be recognized even in an environment where light is dim around the liquid crystal display device. Another object is to provide a liquid crystal display device capable of image display in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. One pixel is provided with a pixel electrode having both of a region where light incident through a liquid crystal layer is reflected and a region having a light-transmitting property, so that image display can be performed in both modes of a reflective mode in which external light is used as a light source and a transmissive mode in which a backlight is used. | 06-30-2011 |
| 20110157254 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE - It is an object to provide a liquid crystal display device which can recognize image display even in the dim surrounding environment of the liquid crystal display device. It is another object to provide a liquid crystal display device which can perform image display in both modes: a reflective mode in which external light is used as an illumination light source; and a transmissive mode in which a backlight is used. A plurality pairs of a pixel in which incident light through a liquid crystal layer is reflected and a light-transmitting pixel are provided; therefore, display image can be performed in both modes: the reflective mode in which external light is used as an illumination light source; and the transmissive mode in which a backlight is used. Further, each reflective pixel and light-transmitting pixel may be connected to an independent signal driver circuit. | 06-30-2011 |
| 20110157961 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 06-30-2011 |
| 20110164083 | Liquid Droplet Ejection System and Control Program of Ejection Condition of Compositions - When using a liquid droplet ejection method, a conventional photomask is not required, however, it is required instead that a moving path of a nozzle or a substrate is controlled with accuracy at least in ejecting liquid droplets. According to the characteristics of compositions to be ejected or their pattern, such ejection conditions are desirably set as the moving rate of a nozzle or a substrate, ejection quantity, ejection distance and ejection rate of compositions, atmosphere of the space that the compositions are ejected, the temperature and moisture of the space, and heating temperature of the substrate. A liquid droplet ejection system in accordance with the invention comprises an input means for inputting data of a thin film pattern, a set means for setting a nozzle for a ejecting a composition containing a material for forming the thin film or setting a moving path of the substrate to which the composition is ejected, an image pick-up means for detecting an alignment marker formed on a substrate and a control means for controlling the moving path of the nozzle or the substrate. | 07-07-2011 |
| 20110165741 | DISPLAY DEVICE, METHOD FOR MANUFACTURING THEREOF, AND TELEVISION DEVICE - The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer. | 07-07-2011 |
| 20110165918 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE - Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP | 07-07-2011 |
