Patent application number | Description | Published |
20090001348 | SEMICONDUCTOR DEVICE - A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal. | 01-01-2009 |
20110007554 | SEMICONDUCTOR DEVICE - A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal. | 01-13-2011 |
20110291702 | SIGNAL TRANSMISSION SYSTEM AND SIGNAL TRANSMISSION METHOD - A signal transmission system according to the present invention includes a first data conversion circuit ( | 12-01-2011 |
20110291819 | RECEPTION CIRCUIT AND SIGNAL RECEPTION METHOD - A reception circuit according to the present invention is a reception circuit ( | 12-01-2011 |
20120007701 | COMMUNICATION CONTROL METHOD AND COMMUNICATION SYSTEM - A communication control method according to the present invention is a communication control method for a communication system using a common AC coupling element for transmitting and receiving signals between first and second circuits, the method including: setting a first transmission circuit Tx | 01-12-2012 |
20120020419 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: a first semiconductor substrate CHP | 01-26-2012 |
20120062040 | SEMICONDUCTOR DEVICE AND SIGNAL TRANSMISSION METHOD - A first inductor ( | 03-15-2012 |
20160056850 | RECEIVER, COMMUNICATION DEVICE, AND COMMUNICATION METHOD - To provide a receiver, a communication device, and a communication method capable of restoring a signal transmitted via a non-contact transmission channel with high accuracy. A communication device has a transmission circuit that converts an input signal into a pulse, a non-contact transmission channel that has a primary side coil and a secondary side coil and transmits the pulse from the transmission circuit in a non-contact manner, a restoration circuit that restores the input signal on the basis of a reception signal corresponding to the pulse transmitted via the non-contact transmission channel, an initialization unit that initializes an output of the non-contact transmission channel, and an initialization control unit that outputs a control signal of controlling the initialization unit on the basis of the reception signal corresponding to the pulse received via the non-contact transmission channel. | 02-25-2016 |
20160087622 | SEMICONDUCTOR DEVICE - The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same. | 03-24-2016 |
20160087626 | POWER CONTROL CIRCUIT - A power control circuit according to one embodiment includes an H-bridge circuit formed using a plurality of power transistors. The power transistors are respectively connected to current measurement circuits that measure currents flowing through the power transistors. Each of the power transistors includes a main emitter and a sense emitter through which a current corresponding to a current flowing through the main emitter flows. Each of the current measurement circuits measures a current flowing through each of the power transistors by using a current flowing through the sense emitter included in the power transistor. A control circuit controls the power transistors based on current values respectively measured by the current measurement circuits. | 03-24-2016 |