Patent application number | Description | Published |
20090236933 | PIEZOELECTRIC DEVICE AND METHOD OF PRODUCTION THEREOF - A piezoelectric device includes a lower electrode, a piezoelectric film and an upper electrode laminated in this order on a support. An oxide film containing a material that forms a lower electrode is formed on a side surface of the piezoelectric film. The piezoelectric device is produced such that an upper electrode and a piezoelectric film are patterned by dry-etching through a mask formed on a side of the upper electrode of the piezoelectric device member and thereafter a side surface of the patterned piezoelectric film (a film adhered to a side wall) is oxidized to form an oxide film. | 09-24-2009 |
20100231657 | PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING THE SAME, AND INK JET HEAD - A piezoelectric element | 09-16-2010 |
20130244352 | METHOD OF MANUFACTURING NOZZLE PLATE - A method of manufacturing a nozzle plate includes: a mask pattern layer forming step of, with respect to a laminated substrate constituted of a first silicon substrate having a (111) surface orientation and a second silicon substrate having a (100) surface orientation, forming a frame-shaped mask pattern layer on the second silicon substrate; a non-through hole forming step of forming a straight section of the nozzle in the first silicon substrate; a protective film forming step of forming a protective film over a first portion on the second silicon substrate that is not covered with the mask pattern layer, and over inner surfaces of the first and second silicon substrates defining the non-through hole; and an anisotropic etching step of anisotropically etching the second silicon substrate so as to form a tapered section of the nozzle defined with {111} surfaces exposed in the second silicon substrate by the anisotropic etching. | 09-19-2013 |
20140076842 | DRY ETCHING METHOD AND DEVICE MANUFACTURING METHOD - A dry etching method of etching a conductive material layered on a dielectric material, comprising: using a mixed gas including a halogen gas and an oxygen gas as an etching gas, a mixing ratio of the oxygen gas in the mixed gas being equal to or greater than 30% and equal to or less than 60%; setting a gas pressure in a chamber at a time of supplying the mixed gas into the chamber and generating plasma, within a range equal to or greater than 1 Pa and less than 5 Pa; and applying a bias voltage of frequency equal to or greater than 800 kHz and less than 4 MHz as a bias voltage to an etched material in which the conductive material is layered on the dielectric material, and performing etching, wherein the dielectric material is a ferroelectric material and the conductive material is a noble metal material. | 03-20-2014 |
Patent application number | Description | Published |
20090301998 | METHOD OF FORMING NOZZLE HOLE AND METHOD OF MANUFACTURING INKJET RECORDING HEAD - A first substrate | 12-10-2009 |
20100079546 | DROPLET JETTING HEAD, METHOD OF MANUFACTURING DROPLET JETTING HEAD, AND DROPLET JETTING APPARATUS EQUIPPED WITH DROPLET JETTING HEAD - A droplet jetting head that is obtained by bonding a first substrate | 04-01-2010 |
20100216260 | PLASMA ETCHING METHOD AND APPARATUS, AND METHOD OF MANUFACTURING LIQUID EJECTION HEAD - The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying processing gas to the chamber, and etching a portion of the material corresponding to an opening portion in the mask pattern; a voltage measurement step of, during the etching in the etching step, measuring a voltage at the surface of the material on a side where the mask pattern is formed, through a conductive member that is placed in contact with the surface of the material on the side where the mask pattern is formed; and a control step of controlling an etching condition in the etching step in accordance with a measurement result obtained in the voltage measurement step. | 08-26-2010 |
20120175061 | PLASMA ETCHING METHOD AND APPARATUS, AND METHOD OF MANUFACTURING LIQUID EJECTION HEAD - The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying processing gas to the chamber, and etching a portion of the material corresponding to an opening portion in the mask pattern; a voltage measurement step of, during the etching in the etching step, measuring a voltage at the surface of the material on a side where the mask pattern is formed, through a conductive member that is placed in contact with the surface of the material on the side where the mask pattern is formed; and a control step of controlling an etching condition in the etching step in accordance with a measurement result obtained in the voltage measurement step. | 07-12-2012 |
20140085377 | INKJET RECORDING DEVICE AND METHOD FOR MAINTAINING SAME - There are provided an inkjet recording device that can stably secure liquid-repellent performance on a surface of a liquid-repellent film formed on a nozzle surface for a long term, and a maintenance method thereof. The inkjet recording device includes: an inkjet head that has a nozzle surface in which a nozzle opening of a nozzle to eject a liquid is formed and on which a liquid-repellent film is formed with an amorphous fluorine resin material; a cleaning portion that wipes off and cleans a surface of the liquid-repellent film by a wiping member; and a liquid-repellent performance recovery processing portion that performs liquid-repellent performance recovery processing to recover liquid-repellent performance on the surface of the liquid-repellent film by heating the liquid-repellent film. | 03-27-2014 |
Patent application number | Description | Published |
20110247995 | DRY ETCHING METHOD AND DRY ETCHING APPARATUS - A dry etching method includes the steps of: supplying process gas to an interior of a vacuum vessel and supplying high-frequency power for plasma generation to an electrode of a plasma generation unit disposed in the vacuum vessel so as to generate plasma; and applying a high-frequency bias voltage to a substrate which is a member to be etched so as to carry out etching of the substrate, wherein the etching is carried out while applying the high-frequency bias voltage in which a self-bias voltage Vdc of a substrate bias voltage is not less than 0 Volts, by adopting a composition using a high-frequency power source for bias which is transformer-coupled to the substrate and a direct current power source for bias which is connected in series to a secondary side of a transformer so as to apply the substrate bias voltage in which a high-frequency voltage and a direct current voltage are superimposed, to the substrate from these power sources via the transformer. | 10-13-2011 |
20110250763 | PLASMA OXIDATION METHOD AND PLASMA OXIDATION APPARATUS - A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin10-13-2011 | |
20110303635 | DRY ETCHING APPARATUS AND METHOD OF DRY ETCHING - A dry etching apparatus includes: a vacuum chamber which includes therein a stage on which a member to be etched is mounted; a process gas supply device which supplies a process gas into the vacuum chamber; a plasma generating device which includes an electrode for generating a plasma in the vacuum chamber; a plasma generating power source which supplies high-frequency power for plasma generation to the electrode of the plasma generating device; a bias power source which is a single bias power source for controlling a self-bias potential of the stage and from which output frequency is variable; a matching box which is a single matching box connected electrically between the stage and the bias power source and which matches impedances between a load of the bias power source and the bias power source; a frequency setting device which sets an output frequency of the bias power source; and a control device which controls an impedance of the matching box according to the set output frequency of the bias power source. | 12-15-2011 |
20120007920 | METHOD OF MANUFACTURING NOZZLE PLATE, LIQUID EJECTION HEAD AND IMAGE FORMING APPARATUS - The method of manufacturing a nozzle plate which includes a nozzle having a tapered section and a linear section includes the steps of: forming an etching stopper layer for stopping dry etching of a silicon substrate, on a first surface of the silicon substrate; forming a mask layer on a second surface of the silicon substrate reverse to the first surface; performing a first patterning process with respect to the mask layer so that an opening section is formed in the mask layer; carrying out the dry etching of the silicon substrate through the opening section in the mask layer so that the tapered section of the nozzle is formed in the silicon substrate; carrying out dry etching of the etching stopper layer through the opening section in the mask layer so that at least a part of the linear section of the nozzle is formed in the etching stopper layer; and removing the mask layer. | 01-12-2012 |
Patent application number | Description | Published |
20130093060 | METHOD FOR PRODUCING SILICON WAFER AND SILICON WAFER - A silicon wafer and method for producing a silicon wafer, including at least: a first heat treatment process in which rapid heat treatment is performed on the wafer by using a rapid heating/cooling apparatus in an atmosphere containing at least one of nitride film formation atmospheric gas, rare gas, and oxidizing gas at a temperature higher than 1300° C. and lower than or equal to a silicon melting point for 1 to 60 seconds; and a second heat treatment process in which temperature and atmosphere are controlled to suppress generation of a defect caused by a vacancy in the wafer and rapid heat treatment is performed on the wafer. Therefore, RIE defects such as oxide precipitates, COPs, and OSFs are not present at a depth of at least 1 μm from the surface, which becomes a device fabrication region, and the lifetime is 500 μsec or longer. | 04-18-2013 |
20130098888 | METHOD FOR HEAT-TREATING WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS - The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided. | 04-25-2013 |