Patent application number | Description | Published |
20090116282 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW | 05-07-2009 |
20090218608 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode. | 09-03-2009 |
20100044793 | SEMICONDUCTOR DEVICE HAVING A PLURALITY OF MISFETS FORMED ON A MAIN SURFACE OF A SEMICONDUCTOR SUBSTRATE - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 02-25-2010 |
20100301422 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Prior known static random access memory (SRAM) cells required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW | 12-02-2010 |
20110220999 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 09-15-2011 |
20120235250 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs | 09-20-2012 |
20160049188 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW | 02-18-2016 |