Patent application number | Description | Published |
20130014779 | CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING PROCESSAANM CHEN; Yi-WeiAACI Taichung CityAACO TWAAGP CHEN; Yi-Wei Taichung City TWAANM TSAI; Teng-ChunAACI Tainan CityAACO TWAAGP TSAI; Teng-Chun Tainan City TWAANM LAI; Kuo-ChihAACI Tainan CityAACO TWAAGP LAI; Kuo-Chih Tainan City TWAANM HUANG; Shu-MinAACI Tainan CityAACO TWAAGP HUANG; Shu-Min Tainan City TW - A cleaning method of a semiconductor manufacturing process is provided. The cleaning method is applied to a semiconductor component including a plurality of material layers formed thereon. An opening is defined in the material layers, and a side wall is exposed from the opening The side wall at least includes a first material layer and a second material layer. At first, a first cleaning process is performed till a lateral etched thickness of the first material layer is equal to a lateral etched thickness of the second material layer. Then, a byproduct formed in the first cleaning process is removed. | 01-17-2013 |
20130078800 | METHOD FOR FABRICATING MOS TRANSISTOR - A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process. | 03-28-2013 |
20130273736 | METHOD FOR FABRICATING MOS TRANSISTOR - A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process. | 10-17-2013 |
20130288456 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed. | 10-31-2013 |
20140017888 | SALICIDE PROCESS - A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer. | 01-16-2014 |
20140242802 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C. | 08-28-2014 |
20140248762 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed. | 09-04-2014 |
20150050799 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (PO-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component. | 02-19-2015 |