Shu-Hsuan
Shu-Hsuan Chou, Ming-Hsiung TW
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20100287326 | Circuit of on-chip network having four-node ring switch structure - A hierarchical ring architecture is constructed with on-chip networks. The on-chip network includes two type-0 ring nodes and two type-1 ring nodes. The present invention provides multiple data transfer in parallel between multiple processor cores or multiple function units and register banks with dynamic configuration. The present invention thus obtains a low control complexity, an optimized local bandwidth, an optimized remote node path, a low routing complexity and a simplified circuit. | 11-11-2010 |
20100287400 | Apparatus providing locally adaptive retiming pipeline with swing structure - The present invention uses a swing structure to avoid using a clock period at a non-efficient execution time. The execution time is precisely controlled to enhance a performance of a processor using a low voltage. Thus, synchronization problems in a chip under different environments are solved for high reliability. | 11-11-2010 |
Shu-Hsuan Chou, Chia-Yi TW
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20110307741 | Non-intrusive debugging framework for parallel software based on super multi-core framework - A non-intrusive debugging framework for parallel software based on a super multi-core framework is composed of a plurality of core clusters. Each of the core clusters includes a plurality of core processors and a debug node. Each of the core processors includes a DCP. The DCPs and the debug node are interconnected via at least one channel to constitute a communication network inside each of the core clusters. The core clusters are interconnected via a ring network. In this way, the memory inside each of the debug nodes constitutes a non-uniform debug memory space for debugging without affecting execution of the parallel program, such that it is applicable to current diversified dynamic debugging methods under the super multi-core system. | 12-15-2011 |
Shu-Hsuan Chou, Min-Hsiung TW
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20140215284 | DYNAMIC SCALING PROCESSOR DEVICE AND PROCESSING METHOD THEREOF - A dynamic scaling processor device and processing method thereof, having a timing decoder, a multi-cycle controller, a correction flip-flop. The timing decoder is provided with a plurality of cycles therein, to receive a plurality of instructions, to select corresponding cycles as its predetermined cycles based on type of each instruction, and output the predetermined cycles and its corresponding instructions to the multi-cycle controller. The multi-cycle controller computes results of the instructions based on the predetermined cycles or a single cycle, and outputs them to the correction flip-flop. The error detection flip-flop utilizes a first clock signal and a stalled second clock signal, to sample a same result, and correct the results when outcomes of samplings are different. | 07-31-2014 |
Shu-Hsuan Lin, Danshuei Township TW
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20090109768 | SRAM Device with Enhanced Read/Write Operations - An SRAM device includes: a first group of memory cells connected to a first local bit line and a first local complementary bit line for accessing data nodes thereof; a second group of memory cells connected to a second local bit line and a second local complementary bit line for accessing data nodes thereof; and a global bit line and a global complementary bit line connected to the first and second local bit lines for accessing data nodes of the first and second groups of memory cells, wherein the first local bit line, the first local complementary bit line, the second local bit line, the second local complementary bit line, the global bit line and the global complementary bit line are constructed on a same metallization level in the SRAM device. | 04-30-2009 |
20100165767 | Asymmetric Sense Amplifier - Sensing circuits for determining the state of memory cells include a sense amplifier. The sense amplifier includes an imbalanced cross-coupled latch (ICL), a first gate field effect transistor (FET) between a bit line (BL) and a first output node, and a second gate FET between a bit line inverse (BLB) and a second output node. The ICL includes a first pull down FET between the first output node and an enable FET connected to electrical ground, and a second pull down FET between the second output node and the enable FET. Channel widths of the second pull down FET and the second gate FET are greater than channel widths of the first pull down FET and the first gate FET to enhance the ability to detect a one (1) and a zero (0) stored in a memory cell connected to the sense amplifier. | 07-01-2010 |
20110317506 | Method for Asymmetric Sense Amplifier - Methods for determining the state of memory cells include using an asymmetric sense amplifier. The methods include sensing the voltages on bit line (BL) and bit line bar (BLB) signals by coupling the BL to a first output node of an imbalanced cross-coupled latch (ICL), the ICL outputting a logic low value if the a difference between the a voltage on the BL and a voltage on the BLB exceeds a threshold. Sensing the voltages includes providing at least a first and a second pull down field effect transistor (FET) each having a channel coupled between the first and second output nodes and a ground node, respectively, in a cross coupled arrangement, wherein the second pull down FET has a channel width that is greater than a channel width of the first pull down FET. Additional methods are disclosed. | 12-29-2011 |
Shu-Hsuan Lin, Hsinchu City TW
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20130294177 | MEMORY DEVICES AND CONTROL METHODS THEREOF - A memory device is provided. The memory device includes a first signal line, a memory cell array, first and second voltage adjustment circuits. The memory cell array is divided into first and second areas and includes first memory cells in the first area and second memory cells in the second area. The first and second memory cells are coupled the first signal line. Each of the first and second memory cells has a reference node. The first voltage adjustment circuit adjusts voltages at the reference nodes of the first memory cells. The second voltage adjustment circuit adjusts voltages at the reference nodes of the second memory cells. The reference nodes of the first memory cells are coupled to a ground through the first voltage adjustment circuit. The reference nodes of the second memory cells are coupled to the ground through the second voltage adjustment circuit. | 11-07-2013 |
20140369103 | CONTENT ADDRESSABLE MEMORY CELLS AND TERNARY CONTENT ADDRESSABLE MEMORY CELLS - An embodiment of the invention provides a binary CAM cell. The binary CAM cell includes a storage circuit, a first discharging circuit, and a second discharging circuit. The storage circuit is configured to provide a first stored bit and a second stored bit, which are complimentary bits of each other. The first discharging circuit is configured to either discharge or not discharge a match line according to the first stored bit provided by the storage circuit and a first searched bit provided by a first search line. The first discharging circuit includes a first PMOS transistor. The second discharging circuit is configured to either discharge or not discharge the match line according to the second stored bit provided by the storage circuit and a second searched bit provided by a second search line. The second discharging circuit includes a second PMOS transistor. | 12-18-2014 |
Shu-Hsuan Lin, New Taipei City TW
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20150108334 | Optical Sensor Module - An optical sensor module is proposed. The optical sensor module comprises two parts, including optical module and vibration sensing unit. The vibration sensing unit is disposed on the optical module. The optical module comprises a light source, a photo detector, and a second substrate with optical micro-reflection surface. The vibration sensing unit comprises a first substrate, a membrane, and an optical gate. The membrane is disposed between the first substrate and the optical gate. The light source and the photo detector are disposed on the second substrate | 04-23-2015 |