Patent application number | Description | Published |
20120156877 | Showerhead for Processing Chamber - A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension. | 06-21-2012 |
20130101750 | High Metal Ionization Sputter Gun - In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included. | 04-25-2013 |
20130137275 | METHODS FOR SELECTIVE ETCHING OF A MULTI-LAYER SUBSTRATE - A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum or tungsten layer on a TiN layer on an HfO | 05-30-2013 |
20130149469 | COMBINATORIAL RF BIAS METHOD FOR PVD - In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition. | 06-13-2013 |
20130153536 | COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE - Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof. | 06-20-2013 |
20130168231 | Method For Sputter Deposition And RF Plasma Sputter Etch Combinatorial Processing - Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma etching can be performed in a same process chamber. The process chamber, configured to carry out sputter deposition and RF plasma etch, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap | 07-04-2013 |
20130270103 | Method Of Enabling And Controlling Ozone Concentration And Flow - Systems and methods to delivery various ozone concentration and various flow rates are disclosed. A low flow, low concentration ozone delivery apparatus comprises an ozone generator configured to deliver a predetermined high flow, low concentration ozone output, an orifice having a predetermined size coupled to the high flow, low concentration ozone output configured to remove a particular amount of the high flow, low concentration ozone, and a mass flow controller coupled to the ozone generator and the orifice, the mass flow controller configured to monitor and control the flow of ozone based on the particular amount bled from the high flow, low concentration ozone to provide a low flow, low concentration ozone. | 10-17-2013 |
20140077147 | Methods For Selective Etching Of A Multi-Layer Substrate - A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO | 03-20-2014 |
20140124359 | New Magnet Design Which Improves Erosion Profile for PVD Systems - Methods and apparatuses for performing combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. The processing chamber includes a sputter assembly disposed over the substrate. The sputter assembly includes a rotatable n-fold, symmetric-shaped magnetron and a sputter target. The methods include depositing a first film on the surface of a first site-isolated region of the substrate. The methods further include depositing a second film on the surface of a second site-isolated region of the substrate. Furthermore, methods include evaluating results of the first and second films. | 05-08-2014 |
20140127422 | Method and Apparatus for High-K Gate Performance Improvement and Combinatorial Processing - Methods and apparatuses for combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. Methods further include forming a first film on a surface of a first site-isolated region on the substrate and forming a second film on a surface of a second site-isolated region on the substrate. The methods further include exposing the first film to a plasma having a first source gas to form a first treated film on the substrate and exposing the second film to a plasma having a second source gas to form a second treated film on the substrate without etching the first treated film in the processing chamber. In addition, methods include evaluating results of the treated films post processing. | 05-08-2014 |
20140130922 | Control Methods and Hardware Configurations for Ozone Delivery Systems - Systems and methods to delivery multiple ozone flows from a single ozone generator are disclosed. An ozone distribution manifold can include an oxygen input for converting the output from the ozone generator to multiple ozone flows with different ozone concentration. The ozone distribution manifold can include multiple flow controllers to regulate the multiple ozone flows to provide different ozone flow rates. | 05-15-2014 |
20140134849 | Combinatorial Site Isolated Plasma Assisted Deposition - An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region. | 05-15-2014 |
20140170335 | Methods and Apparatus for Combinatorial PECVD or PEALD - Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner. | 06-19-2014 |
20140174921 | Multi-Piece Target and Magnetron to Prevent Sputtering of Target Backing Materials - An apparatus for sputtering wherein magnets within the magnetron of a sputtering source are positioned such that Ar | 06-26-2014 |
20140183036 | In Situ Sputtering Target Measurement - Methods and systems for in situ measuring sputtering target erosion are disclosed. The emission of material from the sputtering target is stopped, a distance sensor is scanned across a radial line on the sputtering target. The sputtering chamber contains a controlled environment separate and distinct from the environment outside the chamber, and the controlled environment is maintained during the scanning The resulting distance data is converted into a surface profile of the sputtering target. The accuracy of the surface profile can be less than about ±1 μm. The distance sensor is protected from deposition of the material from the sputtering target. End-of-life for a sputtering target can be determined by obtaining a surface profile of the sputtering target at regular intervals and replacing the sputtering target when the thinnest location on the target as measured by the surface profile is below a predetermined threshold. | 07-03-2014 |