Patent application number | Description | Published |
20140353735 | LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL - Transistors and methods for fabricating the same include forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce fin width and round corners of the one or more semiconductor fins; and forming a dielectric layer and gate over the thinned fins. | 12-04-2014 |
20150061015 | NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES - Semiconductor devices having non-merged fin extensions and methods for forming the same. Methods for forming semiconductor devices include forming fins on a substrate; forming a dummy gate over the fins, leaving a source and drain region exposed; etching the fins below a surface level of a surrounding insulator layer; and epitaxially growing fin extensions from the etched fins. | 03-05-2015 |
20150194504 | NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES - Methods for forming semiconductor devices having non-merged fin extensions. Methods for forming semiconductor devices include forming trenches in an insulator layer of a substrate. Fins are formed in the trenches and a dummy gate is formed over the fins, leaving a source and drain region exposed. The fins are etched below a surface level of a surrounding insulator layer. Fin extensions are epitaxially grown from the etched fins. | 07-09-2015 |
20150206877 | NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES - Semiconductor devices having non-merged fin extensions. A semiconductor device includes fins formed in trenches in an insulator layer, each of the fins having a uniform crystal orientation and a fin cap in a source and drain region that extends vertically and laterally beyond the trench. The fin caps of the respective fins are separate from one another. | 07-23-2015 |
20150214338 | FINFET WITH SILICON GERMANIUM STRESSOR AND METHOD OF FORMING - The present disclosure generally provides for a method of forming a FinFET with a silicon germanium (SiGe) stressor, in addition to a FinFET structure obtained from embodiments of the method. The method can include forming a semiconductor fin on a buried insulator layer; forming a gate structure on the semiconductor fin; forming a silicon germanium (SiGe) layer on the buried insulator layer, wherein the SiGe layer contacts the semiconductor fin; and heating the SiGe layer, wherein the heating diffuses germanium (Ge) into the semiconductor fin. | 07-30-2015 |
20150295065 | NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES - Semiconductor devices having non-merged fin extensions and methods for forming the same. Methods for forming semiconductor devices include forming fins on a substrate; forming a dummy gate over the fins, leaving a source and drain region exposed; etching the fins below a surface level of a surrounding insulator layer; and epitaxially growing fin extensions from the etched fins. | 10-15-2015 |