Patent application number | Description | Published |
20100188491 | SOLID-STATE IMAGING DEVICE, ENDOSCOPE APPARATUS, AND DRIVE METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes plural pixel portions and a signal reading section. Each of the plural pixel portions includes a photoelectric conversion portion, and plural charge storage portions a selected one of which can store charge generated in the photoelectric conversion portion. The signal reading section independently reads out signals corresponding to amounts of charges stored in the plural respective charge storage portions. | 07-29-2010 |
20100188544 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND SIGNAL READING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a plurality of pixel portions, each of the pixel portions includes: a semiconductor photoelectric conversion portion for generating holes according to an amount of incident light and storing the generated holes; a semiconductor floating diffusion layer for converting the holes generated in the photoelectric conversion portion into a voltage corresponding to an amount of the generated holes; and a transistor having a gate electrode which is connected to an output of the floating diffusion layer and an electron storage portion which is disposed under the gate electrode and an amount of electrons stored in which varies depending on a voltage applied to the gate electrode, and the solid-state imaging device further includes: a reading circuit as defined herein. | 07-29-2010 |
20100201797 | ENDOSCOPE DEVICE AND METHOD FOR DRIVING ENDOSCOPE DEVICE - An endoscope device includes: a light source including an LED for emitting an R light, an LED for emitting a G light and an LED for emitting a B light, and a solid-state image pick-up element having a plurality of pixel parts including a photoelectric conversion part that may receive the R light, the G light and the B light to generate electric charges corresponding to the received lights and floating gates that may selectively store the electric charges generated in the photoelectric conversion part and a reading circuit that independently reads signals corresponding to the electric charges respectively stored in the floating gates. | 08-12-2010 |
20100231769 | SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND DRIVING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: a plurality of pixel portions each comprising a photoelectric conversion portion disposed in a semiconductor substrate; and a light shield layer disposed over the semiconductor substrate and having openings which are located over parts of the photoelectric conversion portions, respectively, each of the pixel portions further includes: a transistor comprising a gate electrode, a channel region, and a charge storage portion which is located between the semiconductor substrate and the gate electrode and stores charge generated in the photoelectric conversion portion, the channel region and the charge storage portion are covered with the light shield layer, and the photoelectric conversion portion extends to under the channel region of the transistor. | 09-16-2010 |
20100238310 | IMAGING APPARATUS AND DRIVE METHOD OF SOLID-STATE IMAGING DEVICE - An imaging apparatus has a plurality of pixel sections. Each of the pixel sections contains a photoelectric conversion section, a floating diffusion layer FD for storing a charge and a transistor MT containing a gate electrode CG and a floating gate FG. The imaging apparatus includes a transistor LT being on-off controlled as a load transistor of the transistor MT and a control section for switching according to an image capturing mode, drive for injecting a charge responsive to a voltage supplied to the CG into the FG with the transistor LT turned off and reading a change in a threshold voltage of the transistor MT caused by the injected charge as an image capturing signal and drive for reading the voltage output from the transistor MT as an image capturing signal in response to the voltage supplied to the CG with the transistor LT turned on. | 09-23-2010 |
20100238338 | SOLID STATE IMAGING DEVICE, IMAGING APPARATUS AND METHOD OF DRIVING SOLID STATE IMAGING DEVICE - A solid state imaging device includes: a photoelectric converting portion that is formed in a semiconductor substrate and serves to generate an electric charge depending on an incident light; a floating gate that stores the electric charge generated in the photoelectric converting portion; and a transistor that have a control gate and provided with the floating gate between the control gate and the semiconductor substrate. A specific resistance of the floating gate and that of the photoelectric converting portion are almost equal to each other. | 09-23-2010 |
Patent application number | Description | Published |
20140240566 | SOLID-STATE IMAGE SENSOR, MANUFACTURING METHOD THEREOF, AND IMAGING APPARATUS INCLUDING THE SAME - An image sensor includes a first semiconductor chip having a first surface and a second surface, the first semiconductor chip a including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light; and a second semiconductor chip having a first surface and a second surface, the second semiconductor chip including first peripheral circuits configured to control the array of pixels and receive the generated image signals, the first peripheral circuits including a vertical scanning circuit, a horizontal scanning circuit, and a signal read-out circuit, the first semiconductor chip being stacked on the second semiconductor chip, the first semiconductor chip not being smaller than the second semiconductor chip. | 08-28-2014 |
20140334601 | SOLID-STATE IMAGE SENSOR AND IMAGING APPARATUS INCLUDING THE SAME - An image sensor includes a first semiconductor chip including first and second surfaces; a second semiconductor chip including first and second surfaces; and a first adhesive layer between the second surface of the first semiconductor chip and the second surface of the second semiconductor chip, the first semiconductor chip being stacked on the second semiconductor chip via the first adhesive layer such that a footprint of the first semiconductor chip is larger than a footprint of the second semiconductor chip with respect to a plan view of the image sensor, the first semiconductor chip including an array of unit pixels configured to capture light corresponding to an image and to generate image signals based on the captured light, the second semiconductor chip including first peripheral circuits configured to control the array of unit pixels and receive the generated image signals. | 11-13-2014 |
20150279881 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a stacked semiconductor device having two or more wafers may include forming a conductor on an upper wafer, the conductor configured to electrically connect input terminals together that have no input protection circuit against ESD; forming front side micro-bumps on a front side of the upper wafer, the front side micro-bumps configured to electrically connect to back side micro-bumps on the upper wafer; forming a TSV structure, the TSV structure configured to facilitate electrical connections between the front and the back side of the upper wafer; forming back side micro-bumps on the back side of the upper wafer, the back side micro-bumps configured to electrically connect with front side micro-bumps on the lower wafer; stacking the upper wafer on the lower wafer; and separating the conductor such that each of the input terminals are electrically independent from other ones of the input terminals. | 10-01-2015 |