Patent application number | Description | Published |
20110096806 | Semiconductor light emitting device - The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified. | 04-28-2011 |
20110243174 | Semiconductor light-emitting device - There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate. | 10-06-2011 |
20130230936 | SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact. | 09-05-2013 |
20140345680 | MULTI-JUNCTION SOLAR CELL, PHOTOELECTRIC CONVERSION DEVICE, AND COMPOUND-SEMICONDUCTOR-LAYER LAMINATION STRUCTURE - A multi-junction solar cell that is lattice-matched with a base, and that includes a sub-cell having a desirable band gap is provided. A plurality of sub-cells are laminated, each including first and second compound semiconductor layers. At least one predetermined sub-cell is configured of first layers and a second layer. In each of the first layers, a 1-A layer and a 1-B layer are laminated. In the second layer, a 2-A layer and a 2-B layer are laminated. A composition A of the 1-A layer and the 2-A layer is determined based on a value of a band gap of the predetermined sub-cell. A composition B of the 1-B layer and the 2-B layer is determined based on a difference between a base lattice constant of the base and a lattice constant of the composition A. Thicknesses of 1-B layer and 2-B layer are determined based on difference between base lattice constant and a lattice constant of composition B, and on thickness of the 1-A layer and thickness of 2-A layer. | 11-27-2014 |
20140345681 | MULTI-JUNCTION SOLAR CELL, COMPOUND SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERSION DEVICE, AND COMPOUND-SEMICONDUCTOR-LAYER LAMINATION STRUCTURE - There is provided a multi-junction solar cell that reduces contact resistance of a junction portion and is capable of performing energy conversion with high efficiency. The multi-junction solar cell includes a plurality of sub-cells | 11-27-2014 |
20150122995 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side. | 05-07-2015 |
20150179840 | LIGHT RECEIVING/EMITTING ELEMENT, SOLAR CELL, OPTICAL SENSOR, LIGHT EMITTING DIODE, AND SURFACE EMITTING LASER ELEMENT TECHNICAL FIELD - A light receiving/emitting element | 06-25-2015 |
20150228685 | LIGHT RECEIVING ELEMENT, IMAGE CAPTURING ELEMENT INCLUDING THE LIGHT RECEIVING ELEMENT AND IMAGE CAPTURING APPARATUS INCLUDING THE IMAGE CAPTURING ELEMENT - A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element. | 08-13-2015 |