Patent application number | Description | Published |
20100102329 | LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS WITH A SHARED ELECTRODE - A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( | 04-29-2010 |
20100314661 | SEMICONDUCTOR SUBSTRATE, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME - The present invention provides a fabrication method of a semiconductor substrate, by which a planar GaN substrate that is easily separated can be fabricated on a heterogeneous substrate, and a semiconductor device which is fabricated using the GaN substrate. The semiconductor substrate comprises a substrate, a first semiconductor layer arranged on the substrate, a metallic material layer arranged on the first semiconductor layer, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and voids formed in the first semiconductor layer under the metallic material layer. | 12-16-2010 |
20110073879 | LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS - A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( | 03-31-2011 |
20110151647 | Semiconductor substrate, semiconductor device, and manufacturing methods thereof - Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed. | 06-23-2011 |
20110309461 | OPTICAL DETECTOR AND SPECTRUM DETECTOR - A photodetector and a spectrum detector, which can be miniaturized and do not require a complicated alignment of an optical axis, are disclosed. A photodetector comprises a substrate and a semiconductor that is formed on the substrate and has a plurality of convex portions. The photodetector detects light transmitted through the plurality of convex portions among light incident on the plurality of convex portions. Accordingly, it is possible to detect light with a specific peak wavelength without using an optical component such as a diffraction grating or prism, so that a small-sized photodetector that does not require a complicated alignment of the optical axis in an optical system may be implemented. | 12-22-2011 |
20120021546 | Method of fabricating semiconductor substrate and method of fabricating light emitting device - The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution. | 01-26-2012 |
20120057156 | SPECTRUM DETECTOR - Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system. | 03-08-2012 |
20120193640 | CRYSTALLINE ALUMINUM CARBIDE THIN FILM, SEMICONDUCTOR SUBSTRATE HAVING THE ALUMINUM CARBIDE THIN FILM FORMED THEREON AND METHOD OF FABRICATING THE SAME - Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate. | 08-02-2012 |
20120202306 | Method of fabricating semiconductor substrate and method of fabricating light emitting device - The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution. | 08-09-2012 |
20120258559 | Semiconductor substrate, semiconductor device, and manufacturing methods thereof - Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed. | 10-11-2012 |
20120305951 | LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS - A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( | 12-06-2012 |
20130003377 | LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS - A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( | 01-03-2013 |
20130109121 | Method of fabricating semiconductor substrate and method of fabricating light emitting device | 05-02-2013 |
20130122694 | Semiconductor substrate, semiconductor device, and manufacturing methods thereof - Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including growing a first compound semiconductor layer on a first surface of a substrate, etching the first compound semiconductor layer using HF, KOH, or NaOH to roughen a first surface of the first compound semiconductor layer, forming cavities in the first compound semiconductor layer, separating the first compound semiconductor layer from the first surface of the substrate, flattening the first surface of the substrate after separating the first compound semiconductor layer, and growing a second compound semiconductor layer on the flattened first surface of the substrate. | 05-16-2013 |
20130237037 | CRYSTALLINE ALUMINUM CARBIDE THIN FILM, SEMICONDUCTOR SUBSTRATE HAVING THE ALUMINUM CARBIDE THIN FILM FORMED THEREON AND METHOD OF FABRICATING THE SAME - Embodiments of the invention provide a crystalline aluminum carbide thin film, a semiconductor substrate having the crystalline aluminum carbide thin film formed thereon, and a method of fabricating the same. Further, the method of fabricating the AlC thin film includes supplying a carbon containing gas and an aluminum containing gas to a furnace, to growing AlC crystals on a substrate. | 09-12-2013 |
20130248900 | LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS - A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( | 09-26-2013 |
20130313577 | LAMINATE SUBSTRATE AND METHOD OF FABRICATING THE SAME - Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AlN layer including the AlN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer. | 11-28-2013 |
20140042493 | SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate. | 02-13-2014 |
20150037963 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF - A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity in a portion of the first semiconductor layer located under where the metallic material layer was removed. | 02-05-2015 |