Patent application number | Description | Published |
20080199128 | Semiconductor integrated optical element - Aiming at realizing a semiconductor integrated optical element comprising a single semiconductor substrate, and first and second optical waveguides differed in the equivalent refractive index from each other on the semiconductor substrate, allowing light signal to propagate from the first optical waveguide to the second optical waveguide, in which the first and second optical waveguides are provided side-by-side on the semiconductor substrate to form a directional coupler allowing optical coupling between the first and second optical waveguides, and a first-guiding-mode optical signal in the first optical waveguide is output after being converted into a second-guiding-mode optical signal in second optical waveguide, which makes possible to suppress generation of reflection loss and emission loss in optical coupling, and obtain extremely desirable optical coupling characteristics, without causing reflection of optical signal, between different types of optical waveguides differed from each other in the equivalent refractive index. | 08-21-2008 |
20080310012 | SEMICONDUCTOR OPTICAL AMPLIFYING DEVICE, SEMICONDUCTOR OPTICAL AMPLIFYING SYSTEM AND SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT - A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed. | 12-18-2008 |
20090052834 | OPTICAL INTEGRATED DEVICE - An optical integrated device includes an optical waveguide structure formed on a semiconductor substrate and including a plurality of first channel optical waveguide portions, an optical coupler portion and a second channel optical waveguide portion, a burying layer formed from a semi-insulating semiconductor material and burying the optical waveguide structure therein such that an upper portion thereof forms a flat face and a side portion thereof forms an inclined face having a predetermined angle with respect to the semiconductor substrate, and a plurality of dummy structure bodies provided over a desired region in the proximity of at least an output side of the optical coupler portion so that radiation light from the optical coupler portion is spatially separated from signal light propagating along the second channel optical waveguide portion. The plural dummy structure bodies are provided discretely so as to be buried flat by the burying layer. | 02-26-2009 |
20090122393 | SEMICONDUCTOR OPTICAL AMPLIFIER - A polarization-independent SOA is provided which uses an InP substrate ( | 05-14-2009 |
20090237780 | SEMICONDUCTOR OPTICAL AMPLIFIER, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A semiconductor optical amplifier is provided having polarization independent optical amplification characteristics and a flat gain spectrum over a wide wavelength region. In the semiconductor optical amplifier including a multi-quantum well active layer formed of well layers and barrier layers alternately laminated to each other on an InP substrate, the well layers and the barrier layers each have a tensile strain, and the tensile strain of each of the barrier layers is larger than the tensile strain of each of the well layers. | 09-24-2009 |
20100007944 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A manufacturing method for an optical semiconductor device, including disposing a semiconductor element that has a polarization dependent gain or polarization dependent loss between optical waveguide modes differing in the direction of polarization, positioning a lens at one end face side of the semiconductor element based on an optical coupling loss between the lens and the semiconductor element, and repositioning the lens based on the polarization dependent gain or the polarization dependent loss of the semiconductor element. | 01-14-2010 |
20100188442 | DISPLAY APPARATUS AND DISPLAY DRIVING METHOD FOR ENHANCING GRAYSCALE DISPLAY CAPABLE OF LOW LUMINANCE PORTION WITHOUT INCREASING DRIVING TIME - A driving method for a plasma display apparatus having address electrodes, scan electrodes and common electrodes and displaying one field of image by using subfields is provided. The driving method includes one specific subfield is arranged to be turned ON early in the one field and always turned ON at luminance level higher than input luminance level “0”, and the specific subfield has a least luminance weight and does not have resetting. | 07-29-2010 |
20100245990 | SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL MODULE - A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light. | 09-30-2010 |
20110013270 | SEMICONDUCTOR OPTICAL AMPLIFIER - A semiconductor optical amplifier includes a semiconductor substrate; an active layer that includes a first region and a second region formed over the semiconductor substrate; and a reflection part that is formed along the second region and includes a first portion that reflects a first wavelength light and a second portion that reflects a second wavelength light with an optical gain lower than an optical gain of the first wavelength light; wherein, the first portion is formed closer to the first region side than the second portion. | 01-20-2011 |
20110164310 | OPTICAL AMPLIFICATION CONTROL APPARATUS, METHOD FOR CONTROLLING SEMICONDUCTOR OPTICAL AMPLIFIER, AND OPTICAL TRANSMISSION EQUIPMENT - An optical amplification control apparatus is formed from a semiconductor optical amplifier, a temperature adjustment unit adjusting the temperature of the semiconductor optical amplifier, and an optical gain control unit adjusting the temperature of the semiconductor optical amplifier by controlling the temperature adjustment unit, and varying an optical gain of the semiconductor optical amplifier. Thus, a pattern effect is suppressed even if the output light intensity (the intensity of amplified light) is increased. | 07-07-2011 |
20110273765 | SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL AMPLIFICATION APPARATUS - A semiconductor optical amplifier includes a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, a light absorption layer and an optical amplification layer formed on the lower cladding layer, and an upper cladding layer formed on the light absorption layer and the optical amplification layer. The band gap of a semiconductor material that forms the light absorption layer is wider than the band gap of a semiconductor material that forms the optical amplification layer. The difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more. | 11-10-2011 |
20120070156 | SEMICONDUCTOR OPTICAL AMPLIFIER - A semiconductor optical amplifier includes an n-type semiconductor layer, a p-type semiconductor layer an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, the active layer transmitting an optical signal and a current-injection part that injects current into the active layer via the n-type semiconductor layer and the p-type semiconductor layer, the active layer including a first active layer that includes AlGaInAs, and a second active layer that includes GaInAsP, the second active layer provided closer to an output side than the first active layer, and the first active layer and the second active layer being butt-jointed. | 03-22-2012 |
20130341668 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A manufacturing method for an optical semiconductor device, including disposing a semiconductor element that has a polarization dependent gain or polarization dependent loss between optical waveguide modes differing in the direction of polarization, positioning a lens at one end face side of the semiconductor element based on an optical coupling loss between the lens and the semiconductor element, and repositioning the lens based on the polarization dependent gain or the polarization dependent loss of the semiconductor element. | 12-26-2013 |