| Patent application number | Description | Published |
|---|
| 20080299375 | ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate | 12-04-2008 |
| 20090087645 | Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device - Affords methods of manufacturing AlN crystals, and AlN crystals, AlN crystal substrates, and semiconductor devices fabricated employing the AlN crystal substrates, that enable semiconductor devices having advantageous properties to be obtained. One aspect of the present invention is an AlN crystal manufacturing method including a step of growing AlN crystal onto the surface of a SiC seed-crystal substrate, and a step of picking out at least a portion of the AlN crystal lying a range of from 2 mm to 60 mm from the SiC seed-crystal substrate surface into the AlN crystal. Furthermore, other aspects are AlN crystals and AlN crystal substrates manufactured by the method, and semiconductor devices fabricated employing the AlN crystal substrates. | 04-02-2009 |
| 20090140287 | III Nitride Crystal Substrate, and Light-Emitting Device and Method of Its Manufacture - Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm | 06-04-2009 |
| 20090208749 | Group III Nitride Single Crystal and Method of Its Growth - Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal ( | 08-20-2009 |
| 20090267190 | Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate - Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×10 | 10-29-2009 |
| 20090298265 | Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device - Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the {0001} form is minimal. A method of manufacturing the III-nitride crystal is one of: conditioning a plurality of crystal plates ( | 12-03-2009 |
| 20100139553 | Method of Growing III-Nitride Crystal - Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal ( | 06-10-2010 |
| 20100147211 | -Nitride Single-Crystal Growth Method - This III-nitride single-crystal growth method, being a method of growing a Al | 06-17-2010 |
| 20100189624 | GROUP III NITRIDE CRYSTAL AND METHOD OF ITS GROWTH - Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×10 | 07-29-2010 |
| 20100221539 | AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate - Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal ( | 09-02-2010 |
| 20100229786 | Method for Growing Group III Nitride Crystal - A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal ( | 09-16-2010 |
| 20100314625 | GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture - Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass | 12-16-2010 |
| 20110057197 | GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - A GaN single crystal substrate has a main surface with an area of not less than 10 cm | 03-10-2011 |
| 20110108852 | GaN SUBSTRATE AND LIGHT-EMITTING DEVICE - The present GaN substrate can have an absorption coefficient not lower than 7 cm | 05-12-2011 |
