Shinozawa
Akira Shinozawa, Kawasaki JP
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20120062764 | DATA MANAGEMENT DEVICE AND RECORDING MEDIUM - A data management device includes an input controller which accepts an input of a data acquisition instruction in a state in which a folder image relating to a folder in which data is to be stored is displayed on a display unit, a data acquisition controller which acquires data from a data acquisition unit in accordance with the data acquisition instruction accepted by the input controller and a data management unit which stores the data acquired by the data acquisition unit in a data storage unit with associating the acquired data with a folder specified by the folder image displayed on the display unit when the data acquisition instruction is accepted. | 03-15-2012 |
20120108290 | MOBILE ELECTRONIC APPARATUS, METHOD FOR IMAGE MANAGEMENT AND RECORDING MEDIUM - A mobile electronic apparatus includes a storage unit which stores an image shot by an image shooting unit, a region information obtaining unit which obtains region information indicating in which one of a plurality of regions the mobile electronic apparatus is located, a move identifying unit which identifies whether the mobile electronic apparatus moved from a first region to a second region on the basis of the region information obtained by the region information obtaining unit and a connection unit which connects, upon the move identifying unit identifying that the mobile electronic apparatus moved from the first region to the second region, an image stored in the storage unit after the mobile electronic apparatus moved from another region to the first region with a region identifier of the first region. | 05-03-2012 |
Kazuhiko Shinozawa, Kyoto JP
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20160046025 | ROBOT SERVICE COOPERATION SYSTEM, PLATFORM AND METHOD - A robot service cooperation system ( | 02-18-2016 |
Masahiko Shinozawa, Miyazaki JP
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20100322002 | EEPROM DEVICE - An EEPROM device which prevents disturbance phenomena when writing data on a memory cell. The device includes an on/off switch element for selectively connecting between an individual source line and a common source line in response to a control signal supplied via a control terminal. | 12-23-2010 |
Tamio Shinozawa, Numazu-Shi JP
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20090025509 | Hydrogen storage material and method of producing the same - A hydrogen storage material is formed by mixing and combining particles of a metal A selected from Mg and Al, particles of a metal B selected from Ni and Cu, and particles of an intermetallic compound A-B of the metal A and the metal B, together. A method of producing the hydrogen storage material includes a step of mixing the particles of the intermetallic compound A-B with the particles of the metal B, a step of adding particles of a hydride A-H of the metal A to the mixture and mixing them together, and a step of dehydrogenating the hydride A-H to convert it to the metal A. | 01-29-2009 |
20150162608 | METAL HYDRIDE, METAL HYDRIDE PARTICLES, ELECTRODE FOR ALKALINE STORAGE BATTERY, AND ALKALINE STORAGE BATTERY - The invention provides a metal hydride that has a main phase having a body-centered cubic structure, and that has a grain boundary phase including Ti and Ni. The metal hydride satisfies X/Y≧2.7, where X is the number of intersections between circles of a diameter equal to or greater than 84 μm and the grain boundary phase that appears in a scanning electron microscopy observation image of the metal hydride, before storage of hydrogen, the intersections being obtained by drawing the circles over the entire scanning electron microscopy observation image, and Y is the number of the circles drawn on the scanning electron microscopy observation image. | 06-11-2015 |
Toshihiko Shinozawa, Hyogo-Ken JP
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20100093186 | METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed. | 04-15-2010 |