Patent application number | Description | Published |
20080237569 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 10-02-2008 |
20080237616 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device, includes an active layer radiating a light having a predetermined wavelength; a first semiconductor layer of a first conductivity type, provided on the active layer. A semiconductor substrate has a first principal surface in contact with the active layer, a second principal surface facing the first principal surface, and side surfaces connected to the second principal surface. Each of the side surfaces has a bevel angle in a range from about 45 degrees to less than 90 degrees with respect to the second principal surface. A second semiconductor layer of a second conductivity type is provided under the active layer. A first electrode is provided under the second semiconductor layer. A distance between the active layer and the first electrode depends on the wavelength and a refractive index of the second semiconductor layer. | 10-02-2008 |
20090059986 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a first clad layer of a first conductivity type provided on a substrate; an active layer provided on the first clad layer; a second clad layer of a second conductivity type provided on the active layer, an upper portion of the second clad layer implements a ridge extending in a predetermined direction; a pair of first current block layers provided on the second clad layer sandwiching the ridge along the extending direction; and a pair of second current block layers provided between the first current block layers on the second clad layer and at sidewalls of the ridge to be contacted with the first current block layers, sandwiching selectively a region including an edge of the ridge, the second current block layers having a refractive index larger than the first current block layers at an emission peak wavelength of the active layer. | 03-05-2009 |
20090185589 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light. | 07-23-2009 |
20090321771 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor light-emitting element emitting light in a region ranging from ultraviolet to visible, and a visible-light luminescent element absorbing light emitted from the semiconductor light-emitting element and outputting visible light. The visible-light luminescent element includes a substrate, a light-reflecting layer formed on the substrate and containing light scattering particles, and a luminescent layer containing phosphor particles. The luminescent layer absorbs light emitted from the semiconductor light-emitting element and output visible light. The luminescent layer further absorbs light that is emitted from the semiconductor light-emitting element, arrives at and is reflected from the light scattering particles, and output the visible light. | 12-31-2009 |
20100148203 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer. | 06-17-2010 |
20100178721 | SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING AN ELECTRODE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a p-type nitride semiconductor layer ( | 07-15-2010 |
20100187497 | SEMICONDUCTOR DEVICE - A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked. | 07-29-2010 |
20100191899 | Information Processing Apparatus and Data Storage Apparatus - According to one embodiment, an information processing apparatus includes an storage apparatus including a first storage and a second storage. The storage apparatus includes a first data management module which stores data which is required to be read in a the predetermined period in the second storage so that the data requested to be read in the predetermined period is distinguishable. The storage apparatus further includes a second data management module which performs replacement of the data in the second storage so that data should be stored in the second storage, in an order reverse to that in which the data is requested to be read, while retaining the data stored in the second storage by the first data management module. | 07-29-2010 |
20100195463 | STORAGE DEVICE AND INFORMATION PROCESSING APPARATUS - According to one embodiment, a power management module of a storage device executes a process of stopping rotation of a disk storage medium by selectively using one of a first mode of stopping the rotation of the disk storage medium on condition that a media access command is not received during a predetermined time from last reception of a media access command, and a second mode of stopping the rotation of the disk storage medium on condition that a media access command which causes access to the disk storage medium is not received during a predetermined time from last reception of a media access command which causes access to the disk storage medium. In addition, the power management module executes a process of starting the rotation of the disk storage medium by selectively using one of a third mode and a fourth mode. | 08-05-2010 |
20100246628 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package. | 09-30-2010 |
20110068360 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 03-24-2011 |
20130040226 | BRAZING MATERIAL FOR BONDING IN ATMOSPHERE, BONDED ARTICLE, AND CURRENT COLLECTING MATERIAL - A brazing alloy for bonding in air, in which the melting point is reduced so as to perform brazing at a low temperature without using flux even in air, is provided. In addition, a bonded article and a current collecting material, each of which is bonded with the brazing alloy and has preferable gas sealing characteristics and superior bonding strength, are provided. The brazing alloy for bonding in air includes Ag and B as essential components. The amount of Ag is not less than 50 vol. % and less than 92 vol. %, and the amount of B is greater than 8 vol. % and not more than 50% vol. %. The amounts of Ag and B are adjusted so that the total of the amounts of Ag and B is 100% including inevitable impurities. | 02-14-2013 |
20130260285 | BRAZING MATERIAL FOR BONDING IN ATMOSPHERE, BONDED ARTICLE, AND CURRENT COLLECTING MATERIAL - A brazing alloy for bonding in air contains Ag, B, and Si, as essential components, in which the total of constituent elements except for Ag is set to more than 50% by volume and not more than 90% by volume, Si content in the constituent elements except for Ag is set to more than 22% by volume, and B content in the constituent elements except for Ag is set to more than 14% by volume. In a bonded layer of a bonded specimen of the present invention, after holding at high temperature, no void as observed in a bonded specimen after holding at high temperature of a Comparative Sample is observed, the brazing alloy is sufficiently melted, and superior gas sealing characteristics are maintained even after holding at high temperature for a long time. | 10-03-2013 |
20150021546 | SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity. | 01-22-2015 |