Patent application number | Description | Published |
20080214686 | PROCESS FOR PRODUCTION OF ZEOLITE FILM - A process for producing a zeolite membrane comprising a seed crystal forming step of placing, in a pressure-resistant vessel, a seeding sol containing silica, water and a structure-directing agent and a support in a state that the support is immersed in the seeding sol and heating the heat-resistant vessel to form a zeolite seed crystal on the surface of the support, and a membrane formation step of allowing the zeolite seed crystal to grow to form a zeolite membrane on the surface of the support. In the seed crystal forming step, the molar ratio of water/silica in the seeding sol is set 10 to 50 and the heating of the pressure-resistant vessel is conducted at 90 to 130° C. The crystal c-axis of the present zeolite membrane is oriented in a direction vertical to the surface of the support and its thickness is uniform. | 09-04-2008 |
20080217240 | ORIENTED ZEOLITE FILM-PROVIDED STRUCTURE - An oriented zeolite membrane-provided structure comprising a support and a membrane-like, MFI type zeolite crystal (an oriented zeolite membrane) provided on the surface of the support, wherein, in the zeolite crystal, the proportion of zeolite crystals whose c-axes are oriented at an angle of 90°±33.76° relative to the surface of the support, is 90% or more of the whole zeolite crystals and the oriented zeolite membrane has a thickness of 1 to 30 μm. The present invention provides an oriented zeolite membrane-provided structure comprising a support and an oriented zeolite membrane provided thereon, wherein the c-axes of zeolite crystals of the membrane are oriented in a direction vertical to the surface of the support and the thickness of the membrane is small. | 09-11-2008 |
Patent application number | Description | Published |
20120183759 | PROCESS FOR PRODUCING ZEOLITE FILM, AND ZEOLITE FILM OBTAINED BY THE PROCESS - A process for producing a zeolite film is provided in which seed crystals thinly adhere to the surface of a support to form a thin and even zeolite film having fewer defects than conventional zeolite films. Also provided is a zeolite film obtained by the producing process. The process for producing the zeolite film comprises: a particle adhesion step of allowing a slurry, where zeolite particles which become seeds are dispersed, to flow down on the surface of a base material by the self-weight of the slurry, so that the zeolite particles adhere to the base material; and a film formation step of immersing the base material, to which the zeolite particles adhere, into a sol to carry out hydrothermal synthesis, thereby forming the zeolite film on the base material. | 07-19-2012 |
20150190755 | DEFECT DETECTION METHOD FOR MONOLITHIC SEPARATION MEMBRANE STRUCTURES, REPAIR METHOD, AND MONOLITHIC SEPARATION MEMBRANE STRUCTURES - Each cell is pressurized with gas from outside of the cell, the amount of permeation of the gas permeated into each cell is measured, and a cell having the amount of permeation greater than (average value of all cells+A) (wherein A is a predetermined value of σ to 6σ, where σ is the standard deviation) is considered to be defective. Alternatively, pressure is reduced for each cell, the degree of vacuum in each cell is measured, and a cell having the degree of vacuum worse than (average value of all cells+A) is considered to be defective. Then, a polymer compound is poured into the defective cells of the monolithic separation membrane structure and cured so that the defective cells are sealed. Alternatively, the polymer compound formed in advance as the sealing member is inserted into the defective cells to seal the defective cells. | 07-09-2015 |
20150224487 | ZEOLITE MEMBRANE REGENERATION METHOD - Provided is a simple method for regenerating a zeolite membrane which has been exposed to water. The method for regenerating a zeolite membrane is a method for regenerating a zeolite membrane which is formed on a ceramic porous body and subjected to removal treatment of structure directing agent. Heating is performed at a regeneration temperature at which the difference in ratio of thermal expansion amount between the ceramic porous body and the zeolite membrane is 0.3% or less when 40° C. is set as datum. The regeneration temperature is preferably a temperature not exceeding the oxidative pyrolysis temperature of the structure directing agent used in the formation of the zeolite membrane. | 08-13-2015 |
Patent application number | Description | Published |
20140027804 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements. | 01-30-2014 |
20140319567 | LIGHT EMITTING DEVICE - A provided light includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode. | 10-30-2014 |
20150060934 | LIGHT EMITTING DEVICE - A side-view type light emitting device having a bottom surface thereof as a light emission surface and one side surface thereof as amounting surface for mounting on amounting substrate includes a stacked semiconductor layer having a first semiconductor layer, an active layer, and a second semiconductor layer which are stacked in that order from a side of the bottom surface; a first connecting electrode exposed from the one side surface and electrically connected to the first semiconductor layer; a metal wire having one end thereof electrically connected to an upper surface of the second semiconductor layer; a second connecting electrode exposed from the one side surface and electrically connected to the other end of the metal wire; and a resin layer which covers at least a part of each of the first semiconductor layer, the second semiconductor layer, the first connecting electrode, the second connecting electrode and the metal wire and which is configured to form an upper surface and side surfaces of the light emitting device. | 03-05-2015 |
20150207042 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements. | 07-23-2015 |
20150295152 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device includes a semiconductor light emitting element, a resin layer, and a metal wire. The semiconductor light emitting element includes a semiconductor stack and an electrode. The semiconductor stack has one surface. The metal wire has a first surface, a second surface opposite to the first surface, and an end surface between the first surface and the second surface. The metal wire is provided in the resin layer and electrically connected to an upper surface of the electrode via the first surface. The end surface of the metal wire is exposed from the resin layer. A lower end of the end surface closest to the first surface of the metal wire that is exposed from the resin layer is provided at an opposite side of the one surface of the semiconductor stack with respect to the upper surface of the electrode. | 10-15-2015 |
20150311410 | LIGHT EMITTING DEVICE - A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode. | 10-29-2015 |
20150333236 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a method of manufacturing at low cost a light emitting device that converts the wavelength of light radiated by a light emitting element and emits, the method includes: forming a phosphor layer on a translucent substrate; arranging a plurality of light emitting elements with a predetermined spacing, the light emitting elements having an electrode formed face provided with positive and negative electrodes respectively and arranged with the electrode formed faces on the top; embedding a resin containing phosphor particles so that an upper face of the embedded resin does not bulge over a plane containing the electrode formed faces; and curing the resin, and then cutting and dividing the cured resin, the phosphor layer and the translucent substrate into a plurality of light emitting devices each including one or more of the light emitting elements. | 11-19-2015 |