Patent application number | Description | Published |
20090261193 | WEBBING RETRACTOR - A webbing retractor is provided that can structure a WSIR mechanism with a small number of parts. When a second gear, that is pivotally-supported so as to rotate freely at a trigger lever, revolves around a first gear while rotating around a shaft, the trigger lever pulls a lock pawl via a link and causes the lock pawl to mesh with a lock base, and rotation of a spool in a pull-out direction is restricted. With such a structure, a structure corresponding to a ring gear of a planetary gear train is not needed, and a locking mechanism can be structured by a small number of parts. | 10-22-2009 |
20100147986 | WEBBING RETRACTING DEVICE - A webbing retracting device that may prevent entering of an end-lock state when a spool rotates in the pull out direction on rebound just after completion of taking up of the webbing belt. A restriction weight is provided on a V gear. The restriction weight moves in the pull out direction relative to the V gear by acceleration when the V gear is rotated in the take up direction, and furthermore, the restriction weight pivots about a support pin under centrifugal force due to rotation of the V gear and attains a contact position. In such a state, even if the inertial mass attempts to displace toward the lock activation direction, the restriction weight interferes with the inertial mass and restricts displacement of the inertial mass toward the lock activation direction. | 06-17-2010 |
20110006147 | WEBBING WINDING DEVICE - A webbing winding device includes a clutch mechanism interposed between a spool and an output shaft of a motor and has a simple structure and high operability. In an interference piece that has an interference portion interfering with a connection pawl when an input gear of a clutch is rotated in the winding direction, a base portion is disposed between an outer retaining ring and an inner retaining ring formed at a gear box, and the base portion comes into press contact with an inner peripheral portion of the outer retaining ring and an outer peripheral portion of the inner retaining ring. The interference portion keeps interfering with the connection pawl until a pressing force more than a maximum static frictional force generated between the inner peripheral portion of the outer retaining ring and the outer peripheral portion of the inner retaining ring, and the base portion is applied to the interference portion, thereby rotating the connection pawl. | 01-13-2011 |
20110133012 | WEBBING TAKE-UP DEVICE - In a V-sensor of a webbing take-up device, concave portions are formed in supporting walls of a supporting member having a spring property, and peak ends of a rotating shaft of a sensor pawl gets into the concave portions, and the rotating shaft is thereby supported by the supporting walls. Cone-shaped concave portions come into contact by pressure with the cone-shaped peak ends of the rotating shaft due to the elasticity of the supporting walls, and therefore, when the rotating shaft attempts to be displaced in the axis direction thereof and in a direction orthogonal to the axis direction of the rotating shaft, the elasticity of the supporting walls withstand displacement of the rotating shaft. As a result, occurrence of a rattle of the rotating shaft, that is, the sensor pawl can be prevented or restrained. | 06-09-2011 |
20110186675 | WEBBING TAKE-UP DEVICE - A webbing take-up device with a small difference in a frictional force between an outermost layer portion of a spiral spring along a circumferential direction of a rotating body and an inner peripheral portion of the rotating body is obtained. A reduction sliding spring is formed in a curved shape, such that the radius of curvature becomes gradually larger in a predetermined ratio toward a longitudinal central portion from both longitudinal ends in a state where the reduction sliding spring has not been elastically deformed in a circular shape. The amount of elastic deformation accompanying a minute change in a position from the longitudinal central portion to both longitudinal ends becomes approximately equal in a state where the reduction sliding spring has been elastically deformed in the circular shape. Therefore, a radially outward elastic force having substantially a center of the reduction sliding spring as its center becomes approximately equal. | 08-04-2011 |
20110186676 | WEBBING TAKE-UP DEVICE - A webbing take-up device which can improve the workability of the assembly work of a tension reducer is obtained. In this webbing take-up device, a take-up spring unit is arranged closer to the opening side of a case than a reduction spring unit within a case. For this reason, when a clutch is arranged inside the reduction balance spring and the inner end of the reduction balance spring in a spiral direction is locked to a spring case of the clutch, the clutch and the reduction balance spring can be easily and visually recognized from the opening side of the case. Thus, the other end of the reduction balance spring can be easily locked to the spring case. | 08-04-2011 |
20130087649 | WEBBING RETRACTOR - A webbing retractor that can alleviate the load on a reducing balance spring without increasing cost and weight is obtained. When a ring inertially rotates in a retraction direction together with a ratchet gear, a ring-side pressing portion of a load receiving portion accommodating portion formed in the ring presses a spring-side load receiving portion of a clutch spring in the retraction direction. Due to this, the clutch spring is loosened, whereby the ring can easily inertially rotate in the retraction direction together with the ratchet gear, and the load acting on a reducing balance spring can be alleviated. | 04-11-2013 |
Patent application number | Description | Published |
20080237732 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof. | 10-02-2008 |
20100167482 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - There is provided a method of manufacturing a semiconductor device that allows the threshold voltage of a p-type MOSFET to be controlled with accuracy as high as possible in a multi-oxide process. | 07-01-2010 |
20110237052 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to an embodiment of the present invention, a method for manufacturing a semiconductor device includes: forming an epitaxial crystal from a seed crystal exposed between first and second structures; heating the epitaxial crystal at a temperature equal to or less than a melting point of the epitaxial crystal to migrate the epitaxial crystal; and migrating the epitaxial crystal to form plural aggregates between the first and second structures. | 09-29-2011 |
20110294271 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof. | 12-01-2011 |
20120181602 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion. | 07-19-2012 |
20130069118 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor memory device according to an embodiment includes a semiconductor substrate and a transistor provided on the semiconductor substrate. The transistor includes a conductive layer, a gate insulating layer, a semiconductor layer, and an oxidation layer. The conductive layer functions as a gate of the transistor. The gate insulating layer contacts with a side surface of the conductive layer. The semiconductor layer has a side surface sandwiching the gate insulating layer with the conductive layer, extends a direction perpendicular to the semiconductor substrate, and functions as a body of the transistor. The oxidation layer contacts with the other side surface of the semiconductor layer. The semiconductor layer is made of silicon germanium. The oxidation layer is made of a silicon oxide. | 03-21-2013 |
Patent application number | Description | Published |
20090263957 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface. | 10-22-2009 |
20100099241 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge. | 04-22-2010 |
20110233646 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film. | 09-29-2011 |
20120090535 | Method of Fabricating Semiconductor Device - A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface. | 04-19-2012 |
20130187217 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film. | 07-25-2013 |
20130248977 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME - A non-volatile semiconductor storage device according to one embodiment of the present application has a memory cell array that includes at least one memory string, a first select transistor, and a second select transistor on a substrate in a lattice form. The first select transistor is electrically connected to a first end of the memory string. The second select transistor is electrically connected to a second end of the memory string. The memory string includes a columnar portion. Multiple memory cells are formed in the columnar portion by multiple conductive layers, multiple insulating layers, a first insulating layer, a charge accumulation layer, a second insulating layer, and a memory channel layer, and are serially connected. The memory channel layer comprises silicon germanium doped with phosphorus. | 09-26-2013 |
20130270621 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND FABRICATION METHOD THEREOF - A nonvolatile semiconductor storage device has a plurality of memory strings in which electrically rewritable memory cells are connected in series. The memory strings have word-line electroconductive layers laminated at a prescribed interval to sandwich an interlayer insulating film onto a semiconductor substrate and through holes that penetrate through the word-line electroconductive layers and the interlayer insulating films. The gate insulating film is formed along an inner wall of the through holes and includes a charge-accumulating film. The columnar semiconductor layer is formed inside the through holes to sandwich the gate insulating film along with the word-line electroconductive layer. The columnar semiconductor layer contains carbon, oxygen, or nitrogen. | 10-17-2013 |
Patent application number | Description | Published |
20120241841 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars. | 09-27-2012 |
20130256779 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprising: forming a first insulating film on a semiconductor substrate; forming an adsorption film on the first insulating film; forming a first film containing germanium on the adsorption film; forming a second insulating film on the first film; forming a floating electrode film on the second insulating film; forming a third insulating film on the floating electrode film; and forming a gate electrode on the third insulating film. | 10-03-2013 |
20140080297 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars. | 03-20-2014 |