Patent application number | Description | Published |
20120292589 | NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element according to the present disclosure includes: a variable resistance element including a first electrode layer, a second electrode layer, and a variable resistance layer which is located between the first electrode layer and the second electrode layer and has a resistance value that reversibly changes based on an electrical signal applied between the first electrode layer and the second electrode layer; and a fixed resistance layer having a predetermined resistance value and stacked together with the variable resistance element. The variable resistance layer includes (i) a first transition metal oxide layer which is oxygen deficient and (ii) a second transition metal oxide layer which has a higher oxygen content atomic percentage than the first transition metal oxide layer. The predetermined resistance value ranges from 70Ω to 1000Ω inclusive. | 11-22-2012 |
20120326113 | NON-VOLATILE MEMORY ELEMENT AND NON-VOLATILE MEMORY DEVICE EQUIPPED WITH SAME - Provided are a non-volatile memory element which can reduce a voltage of an electric pulse required for initial breakdown, and can lessen non-uniformity of a resistance value of the non-volatile memory element, and a non-volatile memory device including the non-volatile memory element. A non-volatile memory element comprises a first electrode ( | 12-27-2012 |
20130119344 | NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME - A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MO | 05-16-2013 |
20130128654 | NONVOLATILE MEMORY ELEMENT, METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT, METHOD OF INITIAL BREAKDOWN OF NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element includes a current steering element which bidirectionally rectifies current in response to applied voltage and a variable resistance element connected in series with the current steering element. The current steering element includes an MSM diode and an MSM diode which are connected in series and each of which bidirectionally rectifies current in response to applied voltage. The MSM diode and the MSM diode include a lower electrode, a first current steering layer, a first metal layer, a second current steering layer, and an upper electrode which are stacked in this order. The current steering element has a breakdown current which is larger than an initial breakdown current which flows in the variable resistance element at the time of initial breakdown. | 05-23-2013 |
20140021429 | NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer positioned between the first electrode and the second electrode. The variable resistance layer has a resistance state which reversibly changes based on an electrical signal applied between the first electrode and the second electrode. The variable resistance layer includes a first variable resistance layer having a first metal oxide and a second variable resistance layer having a second metal oxide. The second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, and the second metal oxide has a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide. | 01-23-2014 |
20140077144 | NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer between the first and second electrodes. The variable resistance layer having a resistance value that reversibly changes according to an electrical signal provided between the electrodes. The variable resistance layer includes a first variable resistance layer and a second variable resistance layer. The first variable resistance layer comprises a first metal oxide. The second variable resistance layer is planar and includes a first part and a second part. The first part comprises a second metal oxide and is planar. The second part comprises an insulator and is planar. The second metal oxide has a lower oxygen deficient degree than that of the first metal oxide. The first and second parts are in contact with different parts of a main surface of the first variable resistance layer which faces the second variable resistance layer. | 03-20-2014 |
20140146594 | DESIGNING METHOD OF NON-VOLATILE MEMORY DEVICE, MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE, AND NON-VOLATILE MEMORY DEVICE - A method of designing a cross-point non-volatile memory device including memory elements arranged in (N×M) matrix, each of the memory elements including a variable resistance element and a bidirectional current steering element connected in series with the variable resistance element, the method comprises the step of: when an absolute value of a low-resistance state writing voltage is VR and an absolute value of a current flowing through the variable resistance element having changed to a low-resistance state by application of the low-resistance state writing voltage to both ends of the variable resistance element in a high-resistance state is I | 05-29-2014 |
20140197368 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD, AND NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD - A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide. | 07-17-2014 |
20140312293 | VARIABLE RESISTANCE NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - In a method of manufacturing a variable resistance non-volatile memory device including non-volatile memory element layers stacked together by repeating the step (S | 10-23-2014 |