Patent application number | Description | Published |
20090072399 | SEMICONDUCTOR MOUNTING BONDING WIRE - There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof. | 03-19-2009 |
20100327450 | SEMICONDUCTOR DEVICE BONDING WIRE AND WIRE BONDING METHOD - It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness. | 12-30-2010 |
20110120594 | BONDING WIRE FOR SEMICONDUCTOR - It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %. | 05-26-2011 |
20120038042 | LEAD-FREE SOLDER ALLOY, SOLDER BALL, AND ELECTRONIC MEMBER COMPRISING SOLDER BUMP - A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn. | 02-16-2012 |
20120094121 | COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR - The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities. | 04-19-2012 |
20120104613 | BONDING WIRE FOR SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness. | 05-03-2012 |
20120118610 | BONDING WIRE FOR SEMICONDUCTOR - There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume. | 05-17-2012 |
20120223430 | SOLDER BALL FOR SEMICONDUCTOR PACKAGING AND ELECTRONIC MEMBER USING THE SAME - The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball. | 09-06-2012 |
20130236734 | METAL FOIL FOR BASE MATERIAL AND PRODUCING METHOD THEREOF - A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T. | 09-12-2013 |
20130236737 | METAL FOIL FOR BASE MATERIAL - A metal foil including: a steel layer whose thickness is 10 to 200 μm; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 μm and the alloy layer contains an Al | 09-12-2013 |
20130306352 | BONDING WIRE FOR SEMICONDUCTOR - There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume. | 11-21-2013 |
20140054766 | LEAD-FREE SOLDER BUMP BONDING STRUCTURE - According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/μm] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration. | 02-27-2014 |