Patent application number | Description | Published |
20090199897 | GLASS COMPOSITION AND ITS APPLICATIONS - A glass composition substantially free from lead and bismuth and containing vanadium oxide and phosphor oxide as main ingredients, wherein the sintered glass of the glass composition exhibits 10 | 08-13-2009 |
20100180934 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME AND ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 07-22-2010 |
20110001094 | ELECTROCONDUCTIVE MATERIAL AND POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION SECONDARY BATTERY USING THE SAME - Disclosed is an electroconductive material which contains at least a vanadium oxide and a phosphorus oxide, and has a crystalline structure composed of a crystalline phase and an amorphous phase, in which the crystalline phase contains a monoclinic vanadium-containing oxide, and a volume of the crystalline phase is larger than that of the amorphous phase. | 01-06-2011 |
20120063076 | GLASS COMPOSITION AND COVERING AND SEALING MEMBERS USING SAME - A glass composition according to the present invention comprises: transition metals; phosphorus; barium; and zinc, the transition metals including: vanadium; and tungsten and/or iron, the glass composition not containing substances included in the JIG level A and B lists, an softening point of the glass composition being from 430 to 530° C., an average linear expansion coefficient of the glass composition being from 6 to 9 ppm/° C. at temperatures from 30 to 250° C. | 03-15-2012 |
20120067415 | GLASS COMPOSITION, ELECTRICALLY CONDUCTIVE PASTE COMPOSITION COMPRISING SAME, ELECTRODE WIRING MEMBER, AND ELCTRONIC COMPONENT - A glass composition according to the present invention comprises: phosphorus, vanadium and at least one transition metal selected from a group consisting of tungsten, iron, and manganese, the glass composition not containing substances included in the JIG level A and B lists, a softening point of the glass composition being 550° C. or lower. | 03-22-2012 |
20120318559 | ELECTRONIC COMPONENT, CONDUCTIVE PASTE, AND METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT - The conductive paste contains the following dispersed in a binder resin dissolved in a solvent: a plurality of particles comprising aluminum and/or an aluminum-containing alloy; and an oxide-comprising powder. The oxide contains vanadium with a valence no greater than 4 and a glass phase. In the method for manufacturing an electronic component, the conductive paste is applied to a substrate and fired, forming electrode wiring. The electronic component is provided with electrode wiring that has: a plurality of particles comprising aluminum and/or an aluminum-containing alloy; and an oxide affixing the particles to a substrate. The oxide contains vanadium with a valence no greater than 4. A compound layer containing vanadium and aluminum is formed on the surfaces of the particles, and the vanadium in the compound layer includes vanadium with a valence no greater than 4. This results in an electrode wiring with high reliability and water resistance. | 12-20-2012 |
20130015410 | POSITIVE ELECTRODE ACTIVE MATERIALAANM Hashiba; YujiAACI NaritaAACO JPAAGP Hashiba; Yuji Narita JPAANM Yoshimura; KeiAACI InzaiAACO JPAAGP Yoshimura; Kei Inzai JPAANM Tachizono; ShinichiAACI NaritaAACO JPAAGP Tachizono; Shinichi Narita JPAANM Naito; TakashiAACI FunabashiAACO JPAAGP Naito; Takashi Funabashi JPAANM Aoyagi; TakuyaAACI HitachiAACO JPAAGP Aoyagi; Takuya Hitachi JPAANM Fujieda; TadashiAACI MitoAACO JPAAGP Fujieda; Tadashi Mito JP - A lithium ion secondary battery has a high cycle retention rate, and has its battery capacity increased. A positive electrode active material is used which includes a crystal phase having a structure formed by collecting a plurality of crystallites | 01-17-2013 |
20130333748 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME ADN ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 12-19-2013 |