Patent application number | Description | Published |
20080236477 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer. | 10-02-2008 |
20080308036 | VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD - There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder. | 12-18-2008 |
20080311294 | VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD - There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder. | 12-18-2008 |
20090194018 | APPARATUS AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - An apparatus for manufacturing an epitaxial wafer, includes: a chamber; a gas inlet provided in the chamber and introducing a reaction gas into the chamber; a gas outlet provided in the chamber and exhausting the reaction gas; a rotator unit provided inside the chamber; a wafer holder provided on an upper portion of the rotator unit and holding a wafer; an inner heater provided inside the rotator unit; and an outer heater provided between the rotator unit and an inner wall of the chamber. | 08-06-2009 |
20090269490 | COATING APPARATUS AND COATING METHOD - An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P | 10-29-2009 |
20100248458 | COATING APPARATUS AND COATING METHOD - The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method. | 09-30-2010 |
20110064878 | APPARATUS AND METHOD FOR FILM DEPOSITION - A deposition apparatus | 03-17-2011 |
20110064885 | APPARATUS AND METHOD FOR FILM DEPOSITION - The deposition apparatus | 03-17-2011 |
20110114013 | FILM DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 05-19-2011 |
20110206866 | DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 08-25-2011 |
20110265710 | FILM FORMING APPARATUS AND METHOD - A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface. | 11-03-2011 |
20120028445 | SUSCEPTOR TREATMENT METHOD AND A METHOD FOR TREATING A SEMICONDUCTOR MANUFACTURING APPARATUS - A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and allowing HCl gas to flow downward from above the susceptor while the susceptor, from which the second substrate has been removed, is heated to a temperature and rotated to remove the remaining crystalline grains derived from the epitaxial growth of Si film and the SiC film on the susceptor. | 02-02-2012 |
20120031330 | SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS - According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield. | 02-09-2012 |
20130036968 | FILM-FORMING APPARATUS AND METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas, a cylindrical shaped liner provided in the film-forming chamber, a straightening vane provided above the liner for the reaction gas to pass through, wherein the outside of the film-forming chamber connects the inside of the liner via a substrate transfer portion provided at the wall of the film-forming chamber by moving the straightening vane from the position that the straightening vane closes the upper opening of the liner. A substrate supporting portion provided in the liner, for supporting the substrate before the film-forming to move the substrate in a vertical direction, a substrate transfer unit capable of moving inside the film-forming chamber through the substrate transfer portion, wherein the substrate is transferred between the substrate supporting portion and the substrate transfer unit. | 02-14-2013 |