Patent application number | Description | Published |
20110092071 | METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL - Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores. The method of producing a silylated porous insulating film ( | 04-21-2011 |
20110204519 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers. | 08-25-2011 |
20120003841 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a step of forming a porous dielectric film on a substrate; a step of disposing the substrate having the porous dielectric film formed thereon inside a chamber; a step of introducing siloxane into the chamber in which the substrate is disposed and heating the substrate to a first temperature; and a step heating the substrate to which the introduced siloxane adheres to a second temperature higher than the first temperature. A pressure inside the chamber is maintained to be equal to or lower than 1 kPa. In the present embodiment, the first temperature is equal to or higher than a temperature at which the pressure inside the chamber is a saturated vapor pressure of the siloxane, and is equal to or lower than a temperature at which a polymerization between the porous dielectric film and the siloxane starts. | 01-05-2012 |
20120025395 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO | 02-02-2012 |
Patent application number | Description | Published |
20100221433 | PROCESS FOR MANUFACTURING HYDROPHOBIZED MICROPOROUS FILM - A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating film | 09-02-2010 |
20100301488 | Semiconductor device - In a semiconductor device, a lower multi-layered interconnect structure, an intermediate via-level insulating interlayer, and an upper multi-layered interconnect structure are stacked in this order in a region overlapped with a bonding pad in a plan view; upper interconnects and vias of the upper multi-layered interconnect structure are formed so as to be connected to the bonding pad in the pad placement region; the intermediate via-level insulating interlayer has no electro-conductive material layer, which connect the interconnects or vias in the upper multi-layered interconnect structure with interconnects or vias in the lower multi-layered interconnect structure, formed therein; and the ratio of area occupied by the vias in the via-level insulating interlayers contained in the lower multi-layered interconnect structure is smaller than the ratio of area occupied by the vias in the via-level insulating interlayers contained in the upper multi-layered interconnect structure. | 12-02-2010 |
20100301495 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Provided is the method for manufacturing the semiconductor device including: providing a film (organic silicon polymer film) containing a silane compound and a porogen on a substrate; providing a hole (interconnect trench) in the organic silicon polymer film using a selective etching process and providing a metallic film (barrier film and copper interconnect) in the inside of the interconnect trench; and conducting a radiation with ultraviolet over the organic silicon polymer film within an atmosphere of a reducing gas while the film is heated at a temperature of not lower than a boiling point or a decomposition temperature of the porogen to obtain a microporous film. | 12-02-2010 |
20110049719 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device includes a first interconnect layer insulating film, first copper interconnects that are embedded in the first interconnect layer insulating film, and an interlayer insulating film that is formed on the first copper interconnects and the first interconnect layer insulating film. The semiconductor device includes a second interconnect layer insulating film that is formed on the interlayer insulating film and second copper interconnects that are embedded in the second interconnect layer insulating film. The first and second interconnect layer insulating films include first and second low dielectric constant films, respectively. The interlayer insulating film has higher mechanical strength than the first and second interconnect layer insulating films. | 03-03-2011 |