Patent application number | Description | Published |
20100330764 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a gate electrode, a source region and a drain region, forming a first metal layer,
| 12-30-2010 |
20100330812 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a first-conductivity-type well and a second-conductivity-type well in a silicon substrate; stacking a first high-dielectric-constant insulating film and a first cap dielectric film above the silicon substrate; removing at least the first cap dielectric film from above the second-conductivity-type well; conducting a first annealing at a first temperature to cause an element included in the first cap dielectric film to diffuse into the first high-dielectric-constant insulating film disposed above the first-conductivity-type well; after the first annealing, stacking a second high-dielectric-constant insulating film and a second cap dielectric film above the silicon substrate; removing the second cap dielectric film disposed above the first-conductivity-type well; and conducting a second annealing at a second temperature lower than the first temperature to cause an element included in the second cap dielectric film to diffuse into the second high-dielectric-constant insulating film disposed above the second-conductivity-type well. | 12-30-2010 |
20110272742 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFCTURING SAME - A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer. | 11-10-2011 |
20140004711 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 01-02-2014 |
20140021513 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer. | 01-23-2014 |
Patent application number | Description | Published |
20100164119 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film. | 07-01-2010 |
20110180590 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WIRE BONDING APPARATUS - A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of H | 07-28-2011 |
20120055976 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND WIRE BONDING APPARATUS - A terminal of a compact wire loop with a great strength of bonding is formed by a method including: a first folding step in which a tip end of a capillary is raised by a height of H | 03-08-2012 |
20140131873 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor. | 05-15-2014 |
Patent application number | Description | Published |
20080265417 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device, includes the steps of forming an insulating film on a semiconductor substrate having a silicide layer, forming a hole in the insulating film on the silicide layer, cleaning an inside of the hole and a surface of the silicide layer, forming a titanium layer on a bottom surface and an inner peripheral surface of the hole by a CVD method, forming a copper diffusion preventing barrier metal layer on the titanium layer in the hole, and burying a copper layer in the hole. | 10-30-2008 |
20080284027 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening. | 11-20-2008 |
20090075477 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming a silicon-containing layer over a semiconductor substrate, forming a metal layer over the semiconductor substrate and the silicon-containing layer, forming a silicide-containing layer over the semiconductor substrate and the silicon-containing layer by heat treatment of the semiconductor substrate and the silicon-containing layer, and applying flash annealing to the silicide-containing layer. | 03-19-2009 |
20090316332 | SEMICONDUCTOR DEVICE CONTAINING THIN FILM CAPACITOR AND MANUFACTURE METHOD FOR THIN FILM CAPACITOR - A thin film capacitor is disposed over a semiconductor substrate. The thin film capacitor includes a lower electrode at least an upper surface of which is made of amorphous or microcrystalline metal, a dielectric film disposed over the lower electrode, and an upper electrode disposed over the dielectric film. | 12-24-2009 |
20110241211 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening. | 10-06-2011 |
20120171864 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing the semiconductor device comprises the steps of forming a MOS transistor | 07-05-2012 |
20120326315 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening. | 12-27-2012 |