Patent application number | Description | Published |
20110198641 | Semiconductor light-emitting element - A semiconductor light-emitting element includes a semiconductor laminated structure including a light-emitting layer sandwiched between first and second conductivity type layers for extracting an emitted light from the light-emitting layer on a side of the second conductivity type layer, a transparent electrode in ohmic contact with the second conductivity type layer, an insulation layer formed on the transparent electrode, an upper electrode for wire bonding formed on the insulation layer, a lower electrode that penetrates the insulation layer, is in ohmic contact with the transparent electrode and the electrode for wire bonding, and has an area smaller than that of the upper electrode in top view, and a reflective portion for reflecting at least a portion of light transmitted through a region of the transparent electrode not in contact with the lower electrode. | 08-18-2011 |
20120241720 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film. | 09-27-2012 |
20120241791 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer. | 09-27-2012 |
20120244653 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT - A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film. | 09-27-2012 |
20130203194 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - Sample A is produced by sequentially forming a first insulating film of SiO | 08-08-2013 |
20140070227 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting element comprises steps of forming a semiconductor layer composed of a Group III nitride based compound semiconductor on a principal surface of a substrate; forming a transparent conductive metal oxide film on the semiconductor layer; forming an electrode above the transparent conductive metal oxide film; forming a mask layer for covering a part of the transparent conductive metal oxide film; and heat treating the transparent conductive metal oxide film having the mask layer formed thereon in an oxygen-containing atmosphere; wherein, in the heat treatment step, an oxygen concentration of a remaining part of the transparent conductive metal oxide film which is not covered by the mask layer is made higher than an oxygen concentration of a part of the transparent conductive metal oxide film which is covered by the mask layer. | 03-13-2014 |
20140077219 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREFOR AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions. | 03-20-2014 |
20150076547 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance. A p-electrode comprises a wire bonding portion being connected to a wire, a wiring portion extending in a wiring pattern from the wire bonding portion, and a contact portion being connected to the wiring portion and being in contact with a transparent electrode via holes. A current blocking layer is provided in a specific region between a p-type layer and a transparent electrode. The current blocking layer is formed of an insulating and transparent material with a refractive index lower than that of the p-type layer. Specific region is a region including the contact portion in plan view. The current blocking layer is not provided in regions overlapping with the wire bonding portion and the wiring portion. The current blocking layer is larger by 0 μm to 9 μm in width than the contact portion. | 03-19-2015 |
20150083997 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an n-electrode including a bonding portion and a wiring portion, a p-electrode including a bonding portion and a wiring portion, and a first insulating film. The n-type layer, the light-emitting layer, and the p-type layer are sequentially stacked on the growth substrate, and the n-electrode and the p-electrode are formed on the first insulating film. A groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one region selected from a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode. The wiring portion, which is formed in the groove, is located at a level lower than that of the light-emitting layer. | 03-26-2015 |