Patent application number | Description | Published |
20100197088 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes: forming a first-conductivity-type semiconductor region on a semiconductor layer; forming a mask member on the first-conductivity-type semiconductor region; selectively forming an opening in the mask member; etching the first-conductivity-type semiconductor region exposed to the opening to form a trench having a larger diameter than the opening and an eaves-like mask projected above the trench and made of the mask member; and forming a second-conductivity-type semiconductor region in the trench below the eaves-like mask by epitaxial growth to form a structure section in which the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region are alternately repeated in a direction generally parallel to a major surface of the semiconductor layer. | 08-05-2010 |
20120043606 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a gate region, a gate insulating film, and an electric field relaxation region. The first semiconductor region includes a first portion and a second portion. The second semiconductor region includes a third portion and a fourth portion. The third semiconductor region includes a fifth portion and a sixth portion. The fourth semiconductor region is adjacent to the sixth portion. The gate region is provided inside a trench made in a second direction orthogonal to the first direction. The gate insulating film is provided between the gate region and an inner wall of the trench. The electric field relaxation region is provided between the third portion and the fifth portion and has an impurity concentration lower than an impurity concentration of the third semiconductor region. | 02-23-2012 |
20130069109 | SEMICONDUCTOR DEVICE HAVING TRENCH STRUCTURE AND METHOD OF MANUFACTURING THE SAME - According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device termination portion with a first semiconductor layer of a first conductive type including a device portion and the device termination portion, and an insulator is buried in the trench in such a manner to cover the trench. The second semiconductor layer, which is of a second conductive type, is provided on the surface of the first semiconductor layer, is in contact with at least a side on the device portion of the trench, and has a smaller depth than the trench. The insulator and a top passivation film for the semiconductor device are made of the same material. | 03-21-2013 |
Patent application number | Description | Published |
20080283015 | Intake manifold - An intake manifold is provided with partitions which divide the lower space formed under opening ends. An intake air is prevented from flowing into the lower space by the partitions. Since the intake air can be efficiently suctioned to each opening ends, pressure loss of the intake air can be reduced. | 11-20-2008 |
20130263811 | AIR INTAKE APPARATUS FOR INTERNAL COMBUSTION ENGINE - A resonator has a volume chamber, which is communicated with a surge tank through a communication passage. A primary intake passage communicates between a cylinder of an internal combustion engine and the surge tank. A secondary intake passage communicates between the surge tank and one of the cylinder and the primary intake passage. A passage length of the secondary intake passage is shorter than a passage length of the primary intake passage. A variable intake valve is fixed to a shaft. The variable intake valve opens and closes the secondary intake passage. A resonator valve is fixed to the shaft. The resonator valve opens and closes the communication passage. A drive device rotates the shaft to drive the variable intake valve and the resonator valve. | 10-10-2013 |
20140014056 | INTAKE MANIFOLD - An intake manifold is equipped with a sub-stream passage connected to branch passages through respective connection ports to introduce intake-air substream other than intake-air mainstream to the plural branch passages. Two of the branch passages which communicate with each other through the sub-stream passage and successively introduce intake air to the internal combustion engine are defined as a first combination. Of the first combinations, a second combination is defined to have a shortest communication length via the sub-stream passage. Of the second combination, the connection port of one of the branch passages where the intake air is introduced later is narrower than that of the other of the branch passages where the intake air is introduced earlier. | 01-16-2014 |
20150252755 | AIR INTAKE APPARATUS FOR INTERNAL COMBUSTION ENGINE - A variable intake air device forms a long port and a short port in each of branches of an intake air manifold. The variable intake air device switches between the long port and the short port. A gas introduction device draws gas into each of the branches. When the engine is in a high load region, the variable intake air device uses the long port, when an engine rotation speed is less than a predetermined rotation speed, and uses the short port, when the engine rotation speed is greater than or equal to the predetermined rotation speed. When the engine is in a low load region, the variable intake air device switches between the long port and the short port according to the engine rotation speed. | 09-10-2015 |
Patent application number | Description | Published |
20150123503 | STATOR - A stator configured with an annular stator core, and a plurality of coils mounted on the stator core and each including a winding portion formed by winding a rectangular conductor in a loop shape, a bus bar portion extended from one end in a radial direction of the stator core in the winding portion, and a terminal portion extended from the other end in the radial direction of the stator core in the winding portion. A bus bar portion is formed so that a longitudinal direction extends perpendicularly to a direction of a central axis of the stator core. The terminal portion is formed so that the longitudinal direction extends perpendicularly to the direction of the central axis of the stator core. The bus bar portion is joined to the terminal portion of a different one of the coils. | 05-07-2015 |
20150155750 | STATOR AND MANUFACTURING METHOD OF STATOR - A three phase stator configured with phases that are U-phase, V-phase, and W-phase. The stator is configured such that a bus bar portion includes a joint that is formed at an end and is joined to a terminal portion of a different one of the coils. A connecting portion is formed between the joint portion and the winding portion. In the coils, a first coil and a second coil serve as the two coils joined to each other by the joint portion of the bus bar portion of the first coil and the terminal portion of the second coil, and ends of the terminal portions of middle coils are the coils disposed between the first coil and the second coil are located at a height closer to the stator core than the connecting portion of the first coil in a direction of a central axis of the stator core. | 06-04-2015 |
20150162793 | STATOR - A stator configured with an annular stator core, and a plurality of coils mounted on the stator core. The bus bar portion being connected to the terminal portion of a different one of the coils of the same phase. The coil is a multi-layer coil that is formed by winding the conductor in a plurality of layers in an inside-outside direction of loops in the winding portion, and that includes on inner and outer peripheral sides of a coil end portion of the coil a plurality of lane change portions formed by the conductor. The bus bar portion is embedded in a clearance between the lane change portions of the coil of a different phase placed between the coils of the same phase which are connected to each other. | 06-11-2015 |