Patent application number | Description | Published |
20090206323 | LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side. | 08-20-2009 |
20090304390 | OPTICAL INTEGRATED CIRCUIT APPARATUS - Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively. | 12-10-2009 |
20090324239 | OPTICAL INTEGRATED CIRCUIT APPARATUS - Optical waveguides and optical transmission/reception units are placed on one principal plane of a semiconductor substrate. A light source is placed on one end surface of the semiconductor substrate and guides generated light to the optical waveguides. In the optical transmission/reception units, each of optical resonant members optically resonates with partial light of one of light beams propagating in the optical waveguides and emits the partial light into an optical transmission member if voltage is applied thereto. In the optical transmission/reception units, each of another optical resonant members optically resonates with light propagating in the optical transmission member and emits the resonated light into a photodetector unit if voltage is applied thereto. | 12-31-2009 |
20120055506 | SUBSTRATE CLEANING METHOD - In a substrate cleaning method for cleaning a substrate with fine patterns having grooves or holes whose representative length is 0.1 mm or less, the substrate is arranged in a space which contains water, such that the substrate faces an acute-angled leading end of a discharge electrode which can be cooled, with a predetermined interval therebetween, with a counter electrode being interposed at a predetermined position between the substrate and the discharge electrode. Then, a predetermined voltage is applied between the discharge electrode and the counter electrode while generating dew condensation in the discharge electrode by cooling the discharge electrode. The substrate is cleaned by generating an aerosol containing water particles having sizes of equal to less than 10 nm in the leading end of the discharge electrode and spraying the aerosol on the substrate. | 03-08-2012 |
20130143344 | LIGHT-EMITTING ELEMENT - A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side. | 06-06-2013 |