Patent application number | Description | Published |
20090026172 | DRY ETCHING METHOD AND DRY ETCHING APPARATUS - In the dry etching method and dry etching apparatus relating to the present invention, high frequency electric power is applied to upper and lower electrodes from high frequency power sources to generate plasma and etch an object on the electrode in a vacuum chamber into which a process gas is introduced via a gas inlet and the interior of which is maintained for a specific pressure by an exhaust unit. An etching rate estimation equation is created using apparatus parameters including an emission intensity ratio obtained by dividing an emission intensity of a plasma emission wavelength by an emission intensity of an inert gas. An estimated etching rate is calculated using the etching rate estimation equation. An estimated etching time to achieve a proper etching quantity is calculated based on the estimated etching rate and used for the control, reducing the production variation of fine devices. | 01-29-2009 |
20090229985 | SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR PRODUCTION APPARATUS - A semiconductor device production method of the present invention first collects data including an initial volume of plating solution, volume of replenished solution, number of wafers processed, value of current applied and volume of waste solution in a step of filling a metal plating film in a via hole or a trench formed in an insulating film on a semiconductor substrate. Then, a cumulative charge during the plating is calculated based on the obtained current value. Also, a total volume of plating solution is calculated. Furthermore, an amount of decomposition products of suppressors contained in the plating solution based on the calculated total volume of plating solution, the volume of waste solution and the calculated cumulative charge. The semiconductor substrate is plated only when the amount of decomposition products is equal to or smaller than a predetermined threshold. | 09-17-2009 |
20100003831 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during a previously-performed film formation process. A processing time required for an amount of film formed on a wafer to reach a predetermined target film thickness is computed based on the computed predicted film formation rate value and the target film thickness. Then, according to the computed processing time, a film-formation process is performed on wafers. In addition, it is determined whether the computed predicted film formation rate value is within a predetermined range, and only when it is determined to be within the predetermined range, the film formation process may be performed. | 01-07-2010 |
20100078043 | CLEANING DEVICE AND CLEANING METHOD - An initial resistivity value of pure water is measured. A lifter is cleaned in a state where the pure water is continuously supplied to the rinsing tank to replenish the rising tank while the pure water is being drained from the rinsing tank. A resistivity value of the pure water in process of cleaning the lifter is measured at predetermined time intervals. A difference value between each of the resistivity values and the initial resistivity value is calculated, and the calculated difference values are integrated. An amount of residual chemical solution of the lifter in process of being cleaned is calculated based on an integration result thus obtained. A period of cleaning time necessary for the lifter to become clean in a state where a flow rate of the drained/replenishing pure water per unit time is maintained is calculated based on the amount of residual chemical solution. The lifter is continuously cleaned in the state where the flow rate of the drained/replenishing pure water per unit time is maintained until the period of cleaning time elapses. | 04-01-2010 |
20100081219 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In the method of manufacturing a semiconductor device, first, values of diffusion parameters of a semiconductor device are acquired in a middle of manufacturing the semiconductor device. Next, a target value of another diffusion parameter to be determined by a processing implemented in a subsequent process of the semiconductor device manufacturing process is calculated. The another diffusion parameter is calculated by substituting the acquired values of diffusion parameters and a desired value of an electrical characteristic of the semiconductor device into a predetermined prediction expression. The prediction expression is an expression showing a corresponding relationship between the electrical characteristic and a plurality of types of diffusion parameters of the semiconductor device. Subsequently, processing conditions for the processing implemented in the subsequent process to realize the target value is determined. Then, the processing to the semiconductor device in the subsequent process is implemented under the determined processing conditions. | 04-01-2010 |
20110042007 | ETCHING APPARATUS AND ETCHING METHOD FOR SUBSTRATE BEVEL - In the bevel etching apparatus relating to the present invention, a substrate is inserted between electrically connected electrodes. A high-frequency power source is connected to the electrodes, and ground potential is applied to a support unit that supports the substrate. Gas (atmosphere) is supplied to the gap between the electrodes and the application of the high-frequency electric power to the electrodes causes the generation of atmospheric-pressure glow discharge between the electrode and the substrate. Bevel etching is performed by rotating the substrate along the circumferential direction in this condition. According to this construction, the bevel etching can be simultaneously performed to the front surface, the rear surface and the side of the substrate without causing any configuration change in the substrate. | 02-24-2011 |
20110217846 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To prevent the occurrence of short circuit or abnormality of wiring resistance values, a semiconductor wafer is subjected to nitrogen plasma treatment after one of the following steps is over; a step of providing a resist pattern on an inter-layer insulation film and then dry-etching the inter-layer insulation film, and a step of dry-etching a stressor SiN film after the resist pattern is removed. | 09-08-2011 |
20140014516 | PLASMA GENERATING APPARATUS AND PLASMA GENERATING METHOD - The plasma-generating apparatus includes a treatment vessel | 01-16-2014 |
20140054242 | LIQUID TREATING APPARATUS AND LIQUID TREATING METHOD - A plasma-generating apparatus includes a first electrode of which at least a part is positioned within a treatment vessel that is to contain liquid, a second electrode of which at least a part is positioned within the treatment vessel, a bubble-generating part which generate a bubble when the liquid is contained in the treatment vessel, such that a surface where conductor is exposed, of a surface of the first electrode which surface is positioned within the treatment vessel, is positioned within the bubble, a gas-supplying apparatus, a power supply for applying voltage between the first electrode and the second electrode. | 02-27-2014 |
20140168644 | APPARATUS FOR ANALYZING ELEMENTS IN LIQUID - An elemental analysis apparatus | 06-19-2014 |
20140231329 | LIQUID TREATMENT DEVICE AND LIQUID TREATMENT METHOD - This disclosure of a liquid treatment device includes a first metal electrode having a part disposed in a reaction tank into which a water being treated is filled, a second metal electrode disposed in the reaction tank, an insulator having an opening portion disposed to surround the first metal electrode so that a closed space is formed. A bubble is generated from the closed space to the water being treated via the opening portion. The liquid treatment device also includes a gas supply device that supplies the space with a gas for generating the bubble, and a power supply that applies a voltage between the first metal electrode and the second metal electrode. | 08-21-2014 |