Patent application number | Description | Published |
20090108395 | SEMICONDUCTOR DEVICE HAVING INCREASED ACTIVE REGION WIDTH AND METHOD FOR MANUFACTURING THE SAME - The disclosed semiconductor device includes a plurality of active patterns including first active patterns which protrude from a semiconductor substrate and have a first width and second active patterns which are connected to upper ends of the respective first active patterns and have a second width greater than the first width. The semiconductor device further includes isolation patterns respectively located between the active patterns to insulate the active patterns from one another. | 04-30-2009 |
20100129979 | SEMICONDUCTOR DEVICE HAVING INCREASED ACTIVE REGION WIDTH AND METHOD FOR MANUFACTURING THE SAME - The disclosed semiconductor device includes a plurality of active patterns including first active patterns which protrude from a semiconductor substrate and have a first width and second active patterns which are connected to upper ends of the respective first active patterns and have a second width greater than the first width. The semiconductor device further includes isolation patterns respectively located between the active patterns to insulate the active patterns from one another. | 05-27-2010 |
20110121388 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a device isolation structure, a recess channel structure, a first lower gate conductive layer conformal to the recess channel structure and defining a recess, a holding layer over the first lower gate conductive layer to fill the recess defined by the first lower gate conductive layer, and a second lower gate conductive layer over the first lower gate conductive layer and the holding layer. The holding layer is configured to hold a shift of the seam occurring in the recess channel structure. | 05-26-2011 |
20130320438 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprises a gate electrode buried in a trench within a semiconductor substrate, a first sealing insulating film disposed over the gate electrode and the semiconductor substrate, an ion-implanting region disposed in portions of the semiconductor substrate adjacent to sidewalls of the trench, and a second sealing insulating film formed over the first sealing insulating film to bury the trench. | 12-05-2013 |
Patent application number | Description | Published |
20130068582 | SYNCHRONIZER SLEEVE AND MANUFACTURING METHOD THEREOF - The present invention provides a synchronizer sleeve and a manufacturing method thereof. The synchronizer sleeve is formed by powder metallurgy using a powder mixture having iron as a main ingredient, 0.2 to 0.3 wt % of carbon, 0.5 to 4.0 wt % of nickel, 0.2 to 2.0 wt % of molybdenum and other indispensable impurities. | 03-21-2013 |
20130145878 | SCISSORS GEAR STRUCTURE AND MANUFACTURING METHOD THEREOF - Disclosed is a scissors gear structure and a method of manufacturing the same, wherein the scissors gear can efficiently remove backlash and prevent noise and vibrations, and wherein the scissors gear has improved mechanical properties including strength and wear resistance. The present invention provides a scissors gear without requiring separate manufacturing of expensive scissors pins which must be forcibly inserted, and without requiring expensive processing such as fine wire cutting to form grooves at both ends of the scissors spring. | 06-13-2013 |
20130147287 | CORE FORMED FROM POWDER AND MOTOR FOR VEHICLE USING THE SAME - A core formed from powder, such as a stator core for use in a motor for a vehicle, wherein the core is formed from metallic powder and includes an outer part disposed at an outside of the motor, an inner part disposed at an inside of the motor, and a winding part which connects the outer part and the inner part and on which a wire is wound, and to a motor for a vehicle using the same. The winding part is formed to have rounded corners and a height lower than the height of the inner part, and a connection part is obliquely formed between the winding part and the inner part so that the winding part and the inner part are naturally connected. | 06-13-2013 |