Patent application number | Description | Published |
20110194329 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 08-11-2011 |
20120008369 | MEMORY ELEMENT AND DRIVE METHOD FOR THE SAME, AND MEMORY DEVICE - A memory element capable of increasing capacity with an improvement of distribution of resistance in the high-resistance state, a drive method therefor, and a memory device are provided. The memory element includes first and second electrodes, and a plurality of resistance change elements electrically connected in series between the first and second electrodes, whose resistance values are reversibly changeable in response to application of a voltage to the first and second electrodes, and changeable to the same resistance state relative to the voltage application. | 01-12-2012 |
20120008370 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes | 01-12-2012 |
20120218808 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm. | 08-30-2012 |
20120236625 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved writing and erasing characteristics during operations at a low voltage and a low current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer, and the barrier layer containing a transition metal or a nitride thereof. | 09-20-2012 |
20120294063 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less. | 11-22-2012 |
20120314479 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-13-2012 |
20130001496 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side. | 01-03-2013 |
20130001497 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 01-03-2013 |
20130240818 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 09-19-2013 |
20140021434 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes | 01-23-2014 |
20140183437 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element with a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer. | 07-03-2014 |
20140183438 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 07-03-2014 |
20140376301 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-25-2014 |
20150072499 | MEMORY ELEMENT WITH ION SOURCE LAYER AND MEMORY DEVICE - A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 03-12-2015 |
Patent application number | Description | Published |
20140088396 | PULSE WAVE SENSOR DEVICE - A light emitter and a light receiver are provided at a side surface of a lever. When a user grips the lever with his hand, the light emitter and the light receiver are positioned close to bases of the middle finger, a ring finger, and a little finger, as a measurement portion of a palm. A blood-flow blockage reducing component protrudes to contact a portion between the index finger and the middle finger, and a thumb, as a contact portion of the palm. | 03-27-2014 |
20140106816 | MOBILE APPARATUS - A smart phone includes photoelectric pulse wave sensing units that obtain photoelectric pulse wave signals from hands holding the smart phone, a touch screen on which a plurality of operation switches that accept operations performed by thumbs are displayed, and a switch arrangement changing unit that changes the arrangement of the displayed plurality of operation switches. The switch arrangement changing unit, when photoelectric pulse wave signals are obtained by the photoelectric pulse wave sensing units, changes the arrangement of the operation switches displayed on the touch screen in such a manner that the operation switches are arranged along a circular arc of a virtual circle whose center is located at a carpometacarpal joint of the thumb of a right hand performing operations and whose radius is the distance from the carpometacarpal joint to the tip of the thumb. | 04-17-2014 |
20140151586 | BIOSENSOR - A biosensor includes light emitting elements and a light receiving element disposed on a principal surface of a wiring board; a light shielding portion disposed between a light-emitting-element sealing portion and a light-receiving-element sealing portion; a base medium having light transmitting properties, disposed in parallel with the wiring board with the light shielding portion therebetween; an adhesion layer having light transmitting properties, configured to bond the base medium with the light-emitting-element sealing portion, the light-receiving-element sealing portion, and the light shielding portion; and a first electrocardiograph electrode attached to a principal surface of the base medium. The refractive index of the base medium is set to be higher than that of the adhesion layer, and a surface of the first electrocardiograph electrode which is adjacent to the base medium is roughened so that stray light passing through the base medium will be scattered. | 06-05-2014 |
20140163342 | BIOSENSOR - A biosensor including light emitting elements and a light receiving element disposed on a principal surface of a wiring board; a light shielding portion disposed between a light-emitting-element sealing portion and a light-receiving-element sealing portion; a base medium having light transmitting properties, disposed in parallel with the wiring board with the light shielding portion therebetween; an adhesion layer having light transmitting properties that bonds the base medium with the light-emitting-element sealing portion, the light-receiving-element sealing portion, and the light shielding portion; and a first electrocardiograph electrode attached to a principal surface of the base medium. Both end portions of the adhesion layer and both end portions of the base medium are disposed such that they overlap neither of the light-receiving-element sealing portion nor the light-emitting-element sealing portion when viewed from a direction normal to the principal surface of the wiring board. | 06-12-2014 |
20140249763 | MOBILE DEVICE - A mobile device including a biosensor for obtaining biological signals in which biological information can be obtained stably while the mobile device is being held with a hand and is used, without providing a sensor specially used for detecting body motion generated by operating the mobile device. | 09-04-2014 |
20150038808 | ELECTROCARDIOGRAPHIC SIGNAL MEASUREMENT APPARATUS AND ELECTROCARDIOGRAPHIC SIGNAL MEASUREMENT METHOD - An electrocardiographic signal measurement apparatus that easily attaches or detaches and can stably measure electrocardiographic signals without obstructing motions of a user. | 02-05-2015 |