Shimode
Akihiro Shimode, Aichi JP
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20110080164 | MAGNETO-SENSITIVE WIRE, MAGNETO-IMPEDANCE ELEMENT AND MAGNETO-IMPEDANCE SENSOR - The magneto-sensitive wire of the invention has a vortex-spin structure and hence includes no magnetic domain walls, so that the magneto-sensitive wire of the invention has an excellent hysteresis characteristic exhibiting nearly zero hysteresis. Therefore, the linearity related to the output voltage characteristic for the applied magnetic field in the determination range of an MI sensor is significantly improved as compared to MI sensors using the conventional magneto-sensitive wires. Using the magneto-sensitive wire of the invention makes it possible to provide a magneto-impedance (MI) element exhibiting a higher precision than the conventional ones and further provide a sensor using such an MI element. | 04-07-2011 |
20120013332 | MAGNETIC DETECTION DEVICE - A magnetic detection device of the present invention includes at least one pair of first magnetosensitive bodies each comprising a soft magnetic material extending in a first axis direction and being sensitive to an external magnetic field oriented in the first axis direction; and a magnetic field direction changer comprising a soft magnetic material and changing an external magnetic field oriented in a different axis direction from the first axis direction into a measurement magnetic field having a component in the first axis direction which can be detected by the at least one pair of first magnetosensitive bodies. With this magnetic detection device, the external magnetic field oriented in the different axis direction can be detected by way of the first magnetosensitive bodies. As a result, while attaining magnetic detection with high accuracy, the magnetic detection device can be reduced in size or thickness by omitting a magnetosensitive body extending long in the different axis direction. | 01-19-2012 |
20120038358 | ULTRA-SENSITIVE MAGNETOIMPEDANCE SENSOR - Provided is a magnetoimpedance (MI) sensor having a high magnetic sensor sensitivity and a wide measurement range. The MI sensor comprises an MI element, an electric current supply unit and a signal processing circuit. The MI element comprises a magnetosensitive wire formed of an amorphous soft magnetic alloy having zero magnetostriction, and a detection coil provided around the magnetosensitive wire with an electric insulator disposed therebetween, thereby detecting voltage generated at the detection coil and corresponding to an external magnetic field upon application of a high frequency electric current to the magnetosensitive wire. The electric current supply unit supplies the high frequency electric current to the MI element. The signal processing circuit processes an output signal from the detection coil. In this MI sensor, the magnetosensitive wire has at least a surface layer in which spins are aligned in a circumferential direction of the wire, and the high frequency electric current has a frequency in the range of 0.3 to 1.0 GHz inclusive. | 02-16-2012 |
Daisuke Shimode, Tokyo JP
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20120326515 | ELECTRIC POWER RECEIVING DEVICE AND METHOD OF RECEIVING ELECTRIC POWER - An electric power receiving device according to the invention receives an electric power from a primary coil, with which a first alternating voltage is applied and through which a first alternate current flows. The device includes an electric power receiving section and a reducing-voltage generating section. The receiving section includes a secondary coil electromagnetically coupled to the primary coil and a capacitor connected to the secondary coil, and generates a second alternating voltage based upon the first alternating current. The generating section generates a reducing-voltage and applies the reducing-voltage to the receiving section, the reducing-voltage being capable of reducing a reactance voltage generated in the receiving section by a second alternating current generated in the receiving section due to the second alternating voltage, and the reducing-voltage being approximately equal to the second alternating voltage in frequency. | 12-27-2012 |
Daisuke Shimode, Narashino-Shi JP
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20150279543 | COIL MOUNTING STRUCTURE - Provided is a coil mounting structure for a device that comprises a primary coil to be supplied with an alternating current, and a secondary coil arranged facing the primary coil and configured to supply an electric power to a load provided in a housing by using an induced voltage generated by an electromagnetic field produced by the primary coil. The coil mounting structure comprises at least one mounting part provided in a region of the housing, the region facing the primary coil, and the at least one mounting part is configured to hold the secondary coil to the housing. The at least one mounting part comprises at least one gap area configured to interrupt a circuit generated by the at least one mounting part. | 10-01-2015 |
Daisuke Shimode, Aichi JP
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20120154098 | Transformer - A transformer includes a primary coil, a secondary coil, and a core. The core is to be used in combination with the primary coil or the secondary coil, and includes a conductor storage part and a central part. The conductor storage part is a concave recess formed in an annular manner and configured to store a conductor of the coil therein. The central part is a region inward from the conductor when the core is used in combination with the coil. The central part has a recessed shape having an opening that opens toward a direction opposite to a direction of an opening of the concave recess. The central part has an end, at a side opposite to a side of the opening of the central part, which is generally flat so as to be contiguous with an inner opening edge of the conductor storage part. | 06-21-2012 |
Hiroshi Shimode, Mie-Ken JP
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20120161206 | SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a memory cell array unit and an alignment mark unit. The cell array unit includes a first memory string, a second memory string and a device isolation insulating layer. The first string is provided on a major surface of a semiconductor layer. The second string is juxtaposed with the first memory string. The device isolation insulating layer partitions the first and second memory strings from each other. The mark unit juxtaposed with the array unit includes a mark unit semiconductor layer and a mark unit insulating layer. The mark unit semiconductor layer is a part of the semiconductor layer. The mark unit insulating layer is juxtaposed with the mark unit semiconductor layer. An upper surface of the mark unit semiconductor layer is included in a plane different from a plane including an upper surface of the mark unit insulating layer. | 06-28-2012 |
Hiroshi Shimode, Yokkaichi-Shi JP
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20090256190 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion. | 10-15-2009 |
Kazumasa Shimode, Susono-Shi JP
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20140230415 | EXHAUST GAS PURIFICATION APPARATUS FOR AN INTERNAL COMBUSTION ENGINE - A reduction in the accuracy of a failure determination of a filter due to a reduction in the detection accuracy of a PM sensor is suppressed. To this end, provision is made for an NOx selective reduction catalyst arranged in an exhaust passage of the internal combustion engine to reduce NOx by means of a reducing agent supplied thereto, a supply device to supply urea water as the reducing agent from an upstream side of the NOx selective reduction catalyst, a PM sensor to detect an amount of particulate matter in an exhaust gas at the downstream side of the NOx selective reduction catalyst, and a control unit to make an amount of production of intermediate products from the urea water supplied from the supply device to ammonia smaller when an amount of particulate matter is detected by the PM sensor than when not detected. | 08-21-2014 |
20140290622 | AIR-FUEL RATIO IMBALANCE DETECTION DEVICE FOR INTERNAL COMBUSTION ENGINE - A plurality of cylinders are provided. An in-cylinder pressure sensor is mounted on each of the plurality of cylinders. A combustion parameter (e.g., the amount of generated heat) is calculated from the output of the in-cylinder pressure sensor. The air-fuel ratio for a cylinder is enleaned by reducing a fuel injection amount until the combustion parameter coincides with a predetermined value. Each cylinder is subjected to fuel injection amount reduction control so that the combustion parameter coincides with the predetermined value. The air-fuel ratio for each cylinder is then calculated in accordance with the reduction amount of fuel injection amount. The calculated air-fuel ratios are compared to detect an air-fuel ratio imbalance between the cylinders. | 10-02-2014 |