Patent application number | Description | Published |
20120141936 | PHOTO-CURING POLYSILOXANE COMPOSITION AND PROTECTIVE FILM FORMED FROM THE SAME - A photo-curing polysiloxane composition includes a polysiloxane, an o-naphthoquinonediazidesulfonate compound, and a solvent. The polysiloxane contains 25 wt % to 60 wt % of a polysiloxane fraction having a molecular weight ranging from 10,000 to 80,000 based on a total weight of the polysiloxane when calculated from an integral molecular weight distribution curve obtained by plotting cumulative weight percentage versus molecular weight falling within a range between 400 and 100,000 measured by gel permeation chromatography. The amount of oligomers in the polysiloxane having a molecular weight less than 800 is from 0 wt % to 10 wt % based on a total weight of the photo-curing polysiloxane composition. A protective film formed from the photo-curing polysiloxane composition and an element containing the protective film are also disclosed. | 06-07-2012 |
20120287393 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERNS BY USING THE SAME - A positive photosensitive resin composition and a method for forming patterns by using the same are disclosed. The photosensitive resin composition comprises a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a dye (C) and a solvent (D). The novolac resin (A) includes a high-ortho novolac resin (A-1) that has ortho-ortho methylene bonding to all methylene bonding in a ratio of 18% to 25%, thereby exhibiting excellent temporal stability and forming patterns with high resolution. | 11-15-2012 |
20120328799 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERNS BY USING THE SAME - A photosensitive resin composition and a method for forming patterns by using the same are disclosed. The photosensitive resin composition comprises a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B) and a ketol solvent (C). The novolac resin (A) includes a high-ortho novolac resin (A-1) that has ortho-ortho methylene bonding to all methylene bonding in a ratio of 18% to 25%, and a weight ratio (A-1)/(C) of the high-ortho novolac resin (A-1) to the ketol solvent (C) is 0.1 to 2.0, thereby exhibiting excellent temporal stability and further forming patterns with superior film to thickness uniformity and high resolution. | 12-27-2012 |
20130135763 | PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATION OF THE SAME - A photosensitive resin composition includes (A) an alkali-soluble resin, (B) a polysiloxane, (C) an ethylenically unsaturated compound, (D) a photo-initiator, (E) a black pigment, and (F) a solvent. The alkali-soluble resin includes an unsaturated-group-containing resin obtained by subjecting a mixture containing (i) an epoxy compound having at least two epoxy groups and (ii) a compound having at least one carboxyl group and at least one ethylenically unsaturated group to polymerization. A weight ratio of the unsaturated-group-containing resin to the polysiloxane ranges from 0.1 to 3.0. Application of the photosensitive resin composition is also disclosed. | 05-30-2013 |
20130142966 | BLUE PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTERS AND USES THEREOF - The invention relates to a blue photosensitive resin composition, and the smoothness of the edge profile formed thereby after development is good. Furthermore, the contrast of a liquid crystal display device manufactured with the blue photosensitive resin composition is excellent. The invention also provides a method for manufacturing a color filter, a color filter and a liquid crystal display device are also provided in the invention. | 06-06-2013 |
20130164461 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND USES THEREOF - The invention relates to a positive photosensitive resin composition with good temporal stability. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device. | 06-27-2013 |
20130228727 | PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATION OF THE SAME - A photosensitive resin composition includes (A) an alkali-soluble resin, (B) a polysiloxane, (C) an ethylenically unsaturated compound, (D) a photo-initiator, (E) a first solvent, and (F) a black pigment dispersion. The alkali-soluble resin (A) includes an unsaturated-group-containing resin (A-1) obtained by subjecting a mixture containing (i) an epoxy compound having at least two epoxy groups and (ii) a compound having at least one carboxyl group and at least one ethylenically unsaturated group to polymerization. A weight ratio of the black pigment dispersion (F) to the polysiloxane (B) ranges from 5 to 35. Application of the photosensitive resin composition is also disclosed. | 09-05-2013 |
20130306970 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND USES THEREOF - The invention relates to a positive photosensitive resin composition without color off after etching. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device. | 11-21-2013 |
20130310497 | PHOTO-CURING POLYSILOXANE COMPOSITION AND APPLICATIONS THEREOF - A photo-curing polysiloxane composition for forming a protective film having superior chemical resistance and development resistance is disclosed. The photo-curing polysiloxane composition includes: a polysiloxane component including at least one polysiloxane having at least one alkenyl group; a quinonediazide compound; a fluorene derivative component including at least one fluorene derivative compound having at least one double-bond-containing group; and a solvent. | 11-21-2013 |
20140065526 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERNS BY USING THE SAME - The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. The positive photosensitive resin composition includes a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a dye (C) and a solvent (D). The novolac resin (A) further includes hydroxy-type novolac resin (A-1), which is synthesized by condensing hydroxylbenzaldehyde compound with aromatic hydroxyl compound. The dye (C) includes at least one (C-1) selected from the group consisting of diazo dye, anthraquinone dye and chromium (III, Cr | 03-06-2014 |
20140087307 | PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS THEREOF - A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule; and a solvent. A protective film which is formed from the photosensitive resin composition and an element which includes the protective film are also provided. | 03-27-2014 |
20140087308 | PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS THEREOF - A photosensitive resin composition includes: an alkali-soluble resin; an o-naphthoquinonediazidesulfonic acid ester; a silsesquioxane having at least two thiol groups in a molecule; and a solvent. The silsesquioxane is obtained by subjecting to condensation a silane material which includes a thiol-group-containing silane represented by R | 03-27-2014 |
20140178819 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND APPLICATIONS THEREOF - A phontosensitive polysiloxane composition for forming a protective film having superior sensitivity is disclosed. A protective film formed from the phontosensitive polysiloxane composition and an element including the protective film are also disclosed. The phontosensitive polysiloxane composition includes a polysiloxane, an o-naphthoquinonediazidesulfonic acid ester, a urethane(meth)acrylate compound having at least six (meth)acryloyl groups in a molecule, and a solvent. | 06-26-2014 |
20140178822 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF - The invention relates to a photosensitive polysiloxane composition that has good thermal transmittance, good chemical resistance and good sensitivity and good refractivity. The invention also provides a method for forming a thin film on a substrate, a thin film on a substrate and an apparatus. | 06-26-2014 |
20140242504 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERNS BY USING THE SAME - The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. The positive photosensitive resin composition includes a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a hydroxycompound (C) and a solvent (D). The novolac resin (A) further includes a hydroxy-type novolac resin (A-1) and a xylenol-type novolac resin (A-2). The hydroxy-type novolac resin (A-1) is synthesized by condensing hydroxyl benzaldehyde compound with aromatic hydroxyl compound. The xylenol-type novolac resin (A-2) is synthesized by condensing aldehyde compound with xylenol compound. The postbaked positive photosensitive resin composition can be beneficially formed to patterns with high film thickness and well cross-sectional profile. | 08-28-2014 |
20140322651 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTING FILM AND ELEMENT HAVING THE PROTECTING FILM - A photosensitive polysiloxane composition including a nitrogen-containing heterocyclic compound (A), a polysiloxane (B), an o-naphthoquinone diazide sulfonate (C), and a solvent (D) is provided. The nitrogen-containing heterocyclic compound (A) is selected from the group consisting of compounds represented by formulas (1) to (4): | 10-30-2014 |
20150031808 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF - The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The invention is to provide a photosensitive polysiloxane composition having excellent surface flatness and high tapered angle of a pattern. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), an alkali-soluble resin containing a silyl group (C) and a solvent (D). | 01-29-2015 |
20150050596 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF - The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The photosensitive polysiloxane composition has excellent chemical resistance. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), a thermal base generator (C) and a solvent (D). | 02-19-2015 |
20150072275 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERN BY USING THE SAME - The present invention relates to a positive photosensitive resin composition and a method for forming a pattern by using the same. The positive photosensitive resin composition includes a novolac resin (A), a polysiloxane (B), an ortho-naphthoquinone diazide sulfonic acid ester (C) and a solvent (D). The novolac resin (A) includes a xylenol-type novolac resin (A-1). The xylenol-type novolac resin (A-1) is synthesized by polycondensing an aldehyde compound with a xylenol compound. | 03-12-2015 |
20150160554 | POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE - A positive-type photosensitive resin composition, a pattern forming method, a thin film transistor array substrate, and a liquid crystal display device are provided. The positive-type photosensitive resin includes a novolac resin (A), an alkali-soluble resin (B), an ester (C) of an o-naphthoquinone diazide sulfonic acid, and a solvent (D). The alkali-soluble resin (B) includes a first alkali-soluble resin (B-1) produced by polymerizing a mixture. The mixture includes an epoxy compound (i) and a compound (ii), wherein the epoxy compound (i) has at least two epoxy groups, and the compound (ii) has at least one carboxylic acid group and at least one ethylenically unsaturated group. | 06-11-2015 |
20150234275 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTING FILM AND ELEMENT HAVING THE PROTECTING FILM - A photosensitive polysiloxane composition, a protecting film and an element having the protecting film are provided. The photosensitive polysiloxane composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), a silane compound (C) containing an amic acid group and a solvent (D). When the photosensitive polysiloxane composition is used for forming a protecting film, the protecting film shows favorable cross-section shape and heat resistance. | 08-20-2015 |
20150293449 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION AND USES THEREOF - The invention relates to a photosensitive polysiloxane composition and a thin film formed by the aforementioned photosensitive polysiloxane composition. The thin film is a planarization film of a TFT substrate, an interlayer insulating film or an overcoat of a core material or a protective material in a waveguide. The thin film is cured at low temperature. The photosensitive polysiloxane composition comprises a polysiloxane (A), an o-naphthoquinone diazide sulfonic acid ester (B), a thermal base generator (C) and a solvent (D). | 10-15-2015 |
20150323868 | PHOTOSENSITIVE COMPOSITION, PROTECTIVE FILM, AND ELEMENT HAVING THE PROTECTIVE FILM - A photosensitive composition, a protective film, and an element having the protective film are provided. The photosensitive composition includes a polysiloxane (A), an o-naphthoquinonediazidesulfonate (B), and a solvent (C). The polysiloxane (A) is obtained by polycondensing a mixture, wherein the mixture includes a silane monomer (a-1) represented by formula (1), a silane monomer (a-2) represented by formula (2), and a silicon-containing compound (a-3). The silicon-containing compound (a-3) is selected from the group consisting of a silane monomer represented by formula (3), a siloxane prepolymer, and a silica particle. The photosensitive composition can be made into a protective film with excellent chemical resistance. | 11-12-2015 |
20150346601 | PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTIVE FILM AND ELEMENT HAVING THE PROTECTIVE FILM - A photosensitive polysiloxane composition including a nitrogen-containing heterocyclic compound (A), a polysiloxane (B), an o-naphthoquinone diazide sulfonate (C), and a solvent (D) is provided. The nitrogen-containing heterocyclic compound (A) is selected from the group consisting of compounds represented by formulas (1) to (4): | 12-03-2015 |
20150376355 | PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM AND ELEMENT HAVING THE SAME - The present invention relates to a photosensitive resin composition, a protective film and an element having the same. The aforementioned photosensitive resin composition includes an alkali-soluble resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B) and a solvent (C). The alkali-soluble resin (A) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride compound (a1), a fluorene derivative having a double-bond group (a2) and an unsaturated compound having an acid-decomposable group (a3). | 12-31-2015 |
20150378256 | PHOTOSENSITIVE RESIN COMPOSITION, PROTECTIVE FILM AND ELEMENT HAVING THE SAME - The present invention relates to a photosensitive resin composition, a protective film and an element having the same. The aforementioned photosensitive resin composition includes a polysiloxane resin (A), an alkali-soluble resin (B), an ortho-naphthoquinone diazide sulfonic acid ester (C) and a solvent (D). The alkali-soluble resin (B) is copolymerized by an unsaturated carboxylic acid or unsaturated carboxylic anhydride compound (b2), a fluorene derivative having a double-bond group (b2) and an unsaturated compound having an acid-decomposable group (b3). | 12-31-2015 |
Patent application number | Description | Published |
20120205794 | SEMICONDUCTOR CHIP PACKAGE STRUCTURE AND SEMICONDUCTOR CHIP - A semiconductor chip package structure including a first semiconductor chip, a second semiconductor chip and a supporting substrate is provided. The first semiconductor chip includes at least a first conductor unit. The first conductor unit has a first bonding surface and a second bonding surface exposed from the first semiconductor chip. The second semiconductor chip includes at least a second conductor unit. The second conductor unit has a third bonding surface and a fourth bonding surface exposed from the second semiconductor chip. The third bonding surface is contacted with and electrically connected to the first bonding surface. The supporting substrate includes a wire unit for electrically connecting to at least one of the second bonding surface and the fourth bonding surface. A semiconductor chip and a semiconductor chip group are also provided. | 08-16-2012 |
20120216155 | CHECKING METHOD FOR MASK DESIGN OF INTEGRATED CIRCUIT - A method for checking mask design of an integrated circuit, wherein the integrated circuit includes a plurality of functional elements arranged at different positions, the method includes generating implant layer data of each functional element of the integrated circuit according to characteristics of each functional element; generating mask design data of the integrated circuit according to circuit design of the integrated circuit; generating a block diagram of the integrated circuit according to the mask design data; determining a corresponding position of the functional element in the block diagram according to the implant layer data; and comparing the implant layer data of the functional element with the mask design data at the corresponding position. | 08-23-2012 |
20130009232 | NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF - A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed on the gate oxide layer and the charge trapping structures, wherein the charge trapping structures protrude from two sides of the gate. The doping regions are disposed in the substrate at two sides of the gate. | 01-10-2013 |
20130026557 | SONOS NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF - A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an opening exposing a portion of the substrate. Subsequently, an oxide-nitride-oxide (ONO) structure with a size substantially less than or equal to the opening is formed to coincide with the portion of the substrate exposed from the opening. | 01-31-2013 |
20130221424 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is described. A stacked gate dielectric is formed over a substrate, including a first dielectric layer, a second dielectric layer and a third dielectric layer from bottom to top. A conductive layer is formed on the stacked gate dielectric and then patterned to form a gate conductor. The exposed portion of the third and the second dielectric layers are removed with a selective wet cleaning step. S/D extension regions are formed in the substrate with the gate conductor as a mask. A first spacer is formed on the sidewall of the gate conductor and a portion of the first dielectric layer exposed by the first spacer is removed. S/D regions are formed in the substrate at both sides of the first spacer. A metal silicide layer is formed on the S/D regions. | 08-29-2013 |
20130234252 | INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME - An integrated circuit includes a substrate, a first semiconductor device, a second semiconductor device and an interlayer dielectric layer. At least one isolation structure has been formed in the he substrate so as to separate the substrate into a first active region and a second active region. The first semiconductor device disposed on the first active region of the substrate includes a first gate insulating layer and a poly-silicon gate stacked on the substrate sequentially. The second semiconductor device disposed on the second active region of the substrate includes a second gate insulating layer and a metal gate stacked on the substrate sequentially. The material of the second gate insulating layer is different from that of the first gate insulating layer. The thickness of the metal gate is greater than that of the poly-silicon gate. The interlayer dielectric layer is disposed on the substrate and covering the first semiconductor device. | 09-12-2013 |
20130280874 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes the following steps. At first, two gate stack layers are formed on a semiconductor substrate, and a material layer covering the gate stack layers is formed on the semiconductor substrate. Subsequently, a part of the material layer is removed to form a sacrificial layer between the gate stack layers, and a spacer at the opposite lateral sides of the gate stack layers. Furthermore, a patterned mask covering the gate stack layers and the spacer and exposing the sacrificial layer is formed, and the sacrificial layer is removed. | 10-24-2013 |
20130307049 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device includes the following steps. At first, a semiconductor substrate is provided. A gate stack layer is formed on the semiconductor substrate, and the gate stack layer further includes a cap layer disposed thereon. Furthermore, two first spacers surrounding sidewalls of the gate stack layer is further formed. Subsequently, the cap layer is removed, and two second spacers are formed on a part of the gate stack layer. Afterwards, a part of the first spacers and the gate stack layer not overlapped with the two second spacers are removed to form two gate stack structures. | 11-21-2013 |
20140091383 | SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is described. A stacked gate dielectric is formed over a substrate, including a first dielectric layer, a second dielectric layer and a third dielectric layer from bottom to top. A conductive layer is formed on the stacked gate dielectric and then patterned to form a gate conductor. The exposed portion of the third and the second dielectric layers are removed with a selective wet cleaning step. S/D extension regions are formed in the substrate with the gate conductor as a mask. A first spacer is formed on the sidewall of the gate conductor and a portion of the first dielectric layer exposed by the first spacer is removed. S/D regions are formed in the substrate at both sides of the first spacer. A metal silicide layer is formed on the S/D regions. | 04-03-2014 |
20140353739 | Semiconductor device and fabrication method thereof - A semiconductor device including a first gate structure and a second gate structure immediately adjacent to each other with a spacer therebetween. Line width of the top of the second gate structure is not less than that of the bottom thereof. A fabrication method thereof is also disclosed. A transient first gate structure and a temporary gate structure are formed by etching through a first hard mask. A second gate structure is formed between a first spacer and a second spacer opposite to each other and disposed respectively on the transient first gate structure and temporary gate structure. The second gate structure is covered with a second hard mask. An etch process is performed through a patterned photoresist layer to remove exposed first hard mask and temporary gate structure and to partially remove exposed portion of first hard mask and transient first gate structure to form the first gate structure. | 12-04-2014 |
20150024598 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is then deposited above the first poly layer of a first device in the first area and above the second poly layer in the second area. Afterwards, a first patterned passivation is formed on the nitride HM film in the first area to cover the nitride HM film and the first device, and a second patterned passivation is formed above the second poly layer in the second area. The second poly layer in the second area is defined by the second patterned passivation. | 01-22-2015 |
20150179748 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a patterned multi-layered dielectric film on a substrate; forming a patterned stack on the patterned multi-layered dielectric film so that an edge of the patterned multi-layered dielectric film is exposed from the patterned stack; forming a cover layer to cover a part of the substrate and expose the patterned stack and the exposed edge of the patterned multi-layered dielectric film; removing at least a part of the exposed edge of the patterned multi-layered dielectric film by using the cover layer and the patterned stack as an etching mask; and performing an ion implantation process by using the cover layer as an etching mask so as to form a doped region. | 06-25-2015 |
Patent application number | Description | Published |
20090214213 | MODULATION DEVICE FOR GENERATING OPTICAL SIGNAL WITH QUADRUPLE FREQUENCY AND METHOD THEREOF - The present invention discloses a modulation device for generating an optical signal with quadruple frequency and the modulation method thereof. The modulation device in the present invention utilizes a commercial integrated modulator, a RF signal generator and a phase shifter to generate an optical signal with quadruple frequency. When the RF signal generator generates a first modulation signal, and the phase shifter shifts the first modulation signal by 90 degrees to generate a second modulation signal, the integrated modulator is biased to transmit the optical signal in maximum value and to modulate the first and second modulation signal so as to generate a output optical signal with quadruple frequency. | 08-27-2009 |
20100008665 | Optical access system for dual service network - The present invention relates to an optical access system for dual service network, which mainly comprises an optical modulation device which is used to receive on-off keying (OOK) signal from cable network and radio frequency (RF) signal from wireless network, the optical modulation device then modulates the OOK signal and the RF signal to an optical signal and send out an output optical signal. Lastly, the output optical signal is being delivered to an optical receiving device through an optical fiber transmission channel, and the optical receiving device can access the OOK signal and RF signal from the output optical signal. In addition, the present invention does not require remote nodes (receiver side) to use any optical filter to discern on-off keying signal from cable network and RF signal from wireless network. The present invention can also apply to the field of wavelength-division multiplexing system. | 01-14-2010 |
20100008680 | Optical modulating device with frequency multiplying technique for electrical signals - The present invention relates to an optical modulating device with frequency multiplying technique for electrical signals, which primary comprises a mixer, which generates a mixed data signal from a first electrical signal and a second electrical signal. The mixed data signal is then received by a first phase shift device to have its phase shifted and becomes a first shifted signal. The first electrical signal is further received by a second phase shift device to have its phase shifted and becomes a second shifted signal. The present invention further comprises an integrated electro-optic modulator (Mach-Zehnder modulator), which is used to receive an input optical signal, the mixed data signal, the first shifted signal, the second shifted signal and the first electrical signal mentioned above, the integrated electro-optic modulator will then modulates the input optical signal into a frequency multiplying output optical signal that carries the first electrical signal and the second electrical signal. The present invention can carry and transmit amplitude shift keying signals and vector modulation signals, thereby provides a more advanced optical communication transmission service. | 01-14-2010 |
20100073763 | Adjustable optical signal delay module and method thereof - The present invention relates to an adjustable optical signal delay module, particularly to a module, which adjusts power of an amplified spontaneous emission generated by a semiconductor optical amplifier and reversely feeds the adjusted amplified spontaneous emission back to the semiconductor optical amplifier to vary a group refractive index of the semiconductor optical amplifier and delay the timing of an optical signal, whereby the present invention can replace the pump laser conventionally required by a CPO mechanism. In the present invention, the feedback optical loop comprises a variable optical attenuator, an optical filter, and optical circulators. An user can control the delay timing of optical signals via adjusting optical power in the feedback optical loop. The present invention can decrease the fabrication cost of an optical signal delay module and reduce the volume thereof. | 03-25-2010 |
20100104294 | Optical modulation device - The present invention discloses an optical modulation device, which comprises an electric signal generator generating an electric signal carrying a data signal; a first sinusoidal signal generator generating a first sinusoidal signal; an optical signal generator generating an input source optical signal; and an optoelectronic modulator(Mach-Zehnder modulator) receiving the input source optical signal, the electric signal and the first sinusoidal signal, biased to modify a transmission performance of the input source optical signal, modulating the input source optical signal with the electric signal and the first sinusoidal signal, and then sending out an output source optical signal carrying the electric signal and the first sinusoidal signal. The present invention realizes frequency multiplication, enables an optical signal to carry vector signals, and promotes the efficiency of broadband systems. | 04-29-2010 |