Patent application number | Description | Published |
20080236661 | Solar cell - A solar cell is provided. The solar cell includes a substrate, at least one first photo-electric conversion unit, at least one second photo-electric conversion unit and a reflective layer. The first photo-electric conversion unit and the second-electric conversion unit are disposed on the substrate. The reflective layer is disposed between the first photo-electric conversion unit and the second photo-electric conversion unit. The reflective layer comprises a plurality of thin films having at least two kinds of refractive indices and alternately stacked. | 10-02-2008 |
20080237620 | LIGHT EMITTING DIODE APPARATUS - A light emitting diode apparatus includes a heat dissipating substrate, a composite layer, an epitaxial layer, a first electrode and a second electrode. The composite layer includes a reflective layer, a transparent conductive layer and a patterned insulating thermoconductive layer, which is disposed between the reflective layer and the transparent conductive layer. The composite layer is disposed between the heat dissipating substrate and the epitaxial layer and allows currents to concentrate to the reflective layer or the transparent conductive layer and then to be diffused evenly through the transparent conductive layer. The epitaxial layer includes a first semiconductor layer electrically connected with the first electrode, an active layer and a second semiconductor layer electrically connected with the second electrode. | 10-02-2008 |
20080283859 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed. | 11-20-2008 |
20080296598 | CURRENT SPREADING LAYER WITH MICRO/NANO STRUCTURE, LIGHT-EMITTING DIODE APPARATUS AND ITS MANUFACTURING METHOD - A light-emitting diode (LED) apparatus includes an epitaxial layer and a current spreading layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed on the first semiconductor layer of the epitaxial layer and has a micro/nano roughing structure layer and a transparent conductive layer. The micro/nano roughing structure layer has a plurality of hollow parts, and the transparent conductive layer covers a surface of the micro/nano roughing structure layer and is filled within the hollow parts. In addition, a manufacturing method of the LED apparatus and a current spreading layer with a micro/nano structure are also disclosed. | 12-04-2008 |
20090014738 | Light emitting diode devices and manufacturing method thereof - A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device. | 01-15-2009 |
20090014747 | MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS - A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield. | 01-15-2009 |
20090050909 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes an epitaxial layer and an etching mask layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The etching mask layer is disposed on the epitaxial layer and has a plurality of hollows. The second semiconductor layer includes a roughing structure. | 02-26-2009 |
20090072259 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed. | 03-19-2009 |
20090090930 | EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS - A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed. | 04-09-2009 |
20090152583 | LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer. | 06-18-2009 |
20090294790 | ELECTROLUMINESCENT DEVICE AND FABRICATION METHOD THEREOF - An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate. | 12-03-2009 |
20110285319 | LIGHT SOURCE MODULE - A light source module is provided. The light source module includes a full wave rectifier, a constant current output integrated circuit (IC) and at least one high operating voltage light emitting diode (HVLED) die coupled between the constant current output IC and a ground. The full wave rectifier generates a rectified signal according to an alternating current (AC) power. The constant current output IC outputs a constant current signal according to the rectified signal. A brightness of the HVLED die is determined by the constant current signal. | 11-24-2011 |
20110286210 | LED LIGHT SOURCE IN A SINGLE-PACKAGE FOR RAISING COLOR-RENDERING INDEX - A LED light source in a single package for raising the color-rendering index is provided. The LED light source comprises a substrate, at least one covering layer, a primary light source, and a secondary light source. The primary and the secondary light sources are formed on the substrate and coated with the at least one covering layer to provide a first output light and a second output light, respectively. The total output light is a mixed color of the first output light and the second output light. | 11-24-2011 |
20110300650 | LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF - A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed. | 12-08-2011 |
20120012882 | LIGHT EMITTING DIODE DEVICES AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device. | 01-19-2012 |
20120056223 | LED PACKAGE STRUCTURE AND PACKAGING METHOD THEREOF - A LED package structure includes a supporting substrate, a first electrically-conductive structure, a LED chip, an insulating layer and a second electrically-conductive structure. The supporting substrate includes a top surface, a bottom surface and a first channel. The first electrically-conductive structure is filled in the first channel and partially formed on the top and bottom surfaces of the supporting substrate. The LED chip is disposed over the supporting substrate. The insulating layer is formed over the supporting substrate and on bilateral sides of the LED chip. The insulating layer has a second channel corresponding to the first electrically-conductive structure. The second electrically-conductive structure is filled in the second channel and partially formed on the insulating layer, and connected with an electrode of the LED chip. The LED chip and the top and bottom surfaces of the supporting substrate are connected with each other through the first and second electrically-conductive structures. | 03-08-2012 |
20130271029 | ILLUMINATION APPARATUS AND METHOD FOR GENERATING WHITE LIGHT - An illumination apparatus includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. The light emitted from the third light-emitting device is selectively mixed with the light emitted from the first light-emitting device or the second light-emitting device to form a white light having a chromaticity coordinate point substantially located on a Black Body Locus. A color of the light emitted from the third light-emitting device is determined by linear relationships between chromaticity coordinate points corresponding to wavelengths of the lights emitted form the first light-emitting device and the second light-emitting device and corresponding to a color temperature of the white light. A method for generating a white light is also disclosed herein. | 10-17-2013 |
20130313587 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING MODULE THEREOF - A light emitting element including an epitaxy layer, at least one first electrode, at least one second electrode, a first bonding pad and a second bonding pad. The epitaxy layer includes in sequence a first semiconductor layer, an active layer and a second semiconductor layer, and the first semiconductor layer has an exposed portion exposed from the second semiconductor layer and the active layer. The first electrode is disposed at the exposed portion. The second electrode is disposed at the second semiconductor layer. The first bonding pad is connected with the first electrode. The second bonding pad is connected with the second electrode. Two light emitting elements with different structures and the light emitting module utilizing the light emitting elements mentioned above are also disclosed. | 11-28-2013 |
20130314894 | LIGHTING APPARATUS - A lighting apparatus includes a circuit board, at least one LED, an optical element, a lampshade and at least one fluorescent material. The LED is disposed on the circuit board. The optical element is disposed above the LED, and has at least one reflective surface so that light emitted from the LED to the optical element partially penetrates through and is partially reflected by the optical element. The lampshade covers the circuit board, the LED and the optical element. The fluorescent material is doped within the lampshade. | 11-28-2013 |
20140042455 | FIELD EFFECT TRANSISTOR DEVICE - A field effect transistor device is provided by the invention. The field effect transistor device includes: a substrate; a buffer layer, a channel layer, and a first barrier layer sequentially disposed on the substrate; a two-dimensional electron gas controlling layer disposed on the first barrier layer; a second barrier layer disposed on the two-dimensional electron gas controlling layer, wherein the second barrier layer has a recess passing through the second barrier layer; and a gate electrode filled into the recess and separated from the second barrier layer and the two-dimensional electron gas controlling layer by an insulating layer. | 02-13-2014 |