Shigihara, JP
Akinori Shigihara, Tochigi-Ken JP
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20100179431 | ULTRASOUND PROBE - The present invention provides an ultrasound probe in which bend of a tip part is fixed only in a state that it is not bent in a direction orthogonal to a direction in which ultrasonic waves are emitted from an ultrasound generation source. To be specific, the ultrasound probe includes: a rod-like tip part inserted into a body cavity; an ultrasound emitting part placed at the tip part to emit ultrasonic waves to a subject; a first bending part for bending the tip part in a direction substantially orthogonal to the emission direction; and a fixing part configured to, when the first bending part is not bending the tip part toward any side of the direction orthogonal to the emission direction, lock a rotation member of the first bending part and inhibit the first bending part from bending the tip part in the direction substantially orthogonal to the emission direction. | 07-15-2010 |
Hiromi Shigihara, Kawasaki-Shi JP
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20140175602 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Characteristics of a semiconductor device are improved. A semiconductor device has a laminated insulating film formed above a lower-layer inductor. This laminated insulating film includes a first polyimide film, and a second polyimide film formed on the first polyimide film and having a second step between the first polyimide film and the second polyimide film. An upper-layer inductor is formed on the laminated insulating film. Since such a laminated structure of the first and second polyimide films is adopted, the film thickness of the insulating film between the lower-layer and upper-layer inductors can be increased, so that withstand voltage can be improved. Further, the occurrence of a depression or peeling-off due to defective exposure can be reduced, and step disconnection of a Cu (copper) seed layer or a plating defect due to the step disconnection can also be reduced. | 06-26-2014 |
20150162395 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate having a main surface; a first insulating layer formed on the main surface and having a first main surface, the first main surface including a first region and a second region without the first area; a first coil formed on the first region of the first insulating layer; a plurality of first wirings formed on the second region of the first insulating layer; a second insulating layer formed on the first coil and on the first wirings, the second insulating layer having a second main surface; a third insulating layer formed on the second main surface above the first region of the first insulating layer and having a third main surface; and a second coil formed on the third main surface of the third insulating layer. | 06-11-2015 |
Hiromi Shigihara, Kanagawa JP
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20110304049 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. | 12-15-2011 |
20120235278 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM USING THE SAME - Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section | 09-20-2012 |
20140021618 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME - To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view. | 01-23-2014 |
Hiromi Shigihara, Hitachinaka JP
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20090315179 | SEMICONDUCTOR DEVICE HAVING SOLDER BUMPS PROTRUDING BEYOND INSULATING FILMS - A semiconductor device having projection electrodes with a narrow pad pitch, and a method of forming such semiconductor device, are provided. On a semiconductor wafer, a polyimide film, which does not cover each of a plurality of lands, is prepared between the respective lands which adjoin each other among the plurality of lands on the main surface of the semiconductor wafer. A soldering paste material is applied by a printing method, via a mask for printing, on each of a plurality of lands after polyimide film formation, and a solder bump is formed by performing heat curing of the soldering paste material after removing the mask for printing. The solder bump can be provided without generating an electric short circuit between bumps even in the case of a narrow pad pitch. | 12-24-2009 |
Hisao Shigihara, Kanagawa JP
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20110304049 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. | 12-15-2011 |
20120235278 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEM USING THE SAME - Adhesive strength between a rewiring and a solder bump is improved in a semiconductor integrated circuit device in which a bump electrode is connected to a land section of the rewiring. The land section | 09-20-2012 |
20140021618 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME - To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view. | 01-23-2014 |
Hisao Shigihara, Kawasaki-Shi JP
Patent application number | Description | Published |
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20140175602 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Characteristics of a semiconductor device are improved. A semiconductor device has a laminated insulating film formed above a lower-layer inductor. This laminated insulating film includes a first polyimide film, and a second polyimide film formed on the first polyimide film and having a second step between the first polyimide film and the second polyimide film. An upper-layer inductor is formed on the laminated insulating film. Since such a laminated structure of the first and second polyimide films is adopted, the film thickness of the insulating film between the lower-layer and upper-layer inductors can be increased, so that withstand voltage can be improved. Further, the occurrence of a depression or peeling-off due to defective exposure can be reduced, and step disconnection of a Cu (copper) seed layer or a plating defect due to the step disconnection can also be reduced. | 06-26-2014 |
20150162395 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate having a main surface; a first insulating layer formed on the main surface and having a first main surface, the first main surface including a first region and a second region without the first area; a first coil formed on the first region of the first insulating layer; a plurality of first wirings formed on the second region of the first insulating layer; a second insulating layer formed on the first coil and on the first wirings, the second insulating layer having a second main surface; a third insulating layer formed on the second main surface above the first region of the first insulating layer and having a third main surface; and a second coil formed on the third main surface of the third insulating layer. | 06-11-2015 |
Hisao Shigihara, Hitachinaka JP
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20090315179 | SEMICONDUCTOR DEVICE HAVING SOLDER BUMPS PROTRUDING BEYOND INSULATING FILMS - A semiconductor device having projection electrodes with a narrow pad pitch, and a method of forming such semiconductor device, are provided. On a semiconductor wafer, a polyimide film, which does not cover each of a plurality of lands, is prepared between the respective lands which adjoin each other among the plurality of lands on the main surface of the semiconductor wafer. A soldering paste material is applied by a printing method, via a mask for printing, on each of a plurality of lands after polyimide film formation, and a solder bump is formed by performing heat curing of the soldering paste material after removing the mask for printing. The solder bump can be provided without generating an electric short circuit between bumps even in the case of a narrow pad pitch. | 12-24-2009 |
Keita Shigihara, Toride-Shi JP
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20150284197 | BELT CONVEYANCE APPARATUS AND IMAGE FORMING APPARATUS - A belt conveyance apparatus includes a plurality of support rollers, an endless belt, a regulation portion configured to regulate a shift of the endless belt in a width direction, a regulation receiving member configured to contact the regulation portion to receive a regulation force by the regulation portion, and support members disposed on an upstream side, in a conveyance direction of the endless belt, of the support rollers provided with the regulation portion to oppose each other on an inner peripheral surface side and an outer peripheral surface side of the end portion side of the endless belt in the width direction, and configured to regulate a position of the regulation receiving member when the regulation receiving member enters a contact portion with the regulation portion. | 10-08-2015 |
Makoto Shigihara, Fukushima-Ken JP
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20080303652 | VALVE-INTEGRATED TRANSPONDER - A valve-integrated transponder includes an air valve and a casing that are integrated with each other, and is disposed within a tire. The casing houses a substrate having a detecting element mounted thereon, an inverse F antenna element, and a supporting member. The antenna element has a substantially line symmetrical shape where a pair of radiation conductors extend away from each other. A longitudinal direction of the substrate is substantially perpendicular to an axial direction of the air valve, and a lateral direction of the substrate is inclined relative to a well of a wheel rim. The two radiation conductors of the antenna element disposed on the substrate are inclined at a predetermined angle with respect to the substrate, so as to be disposed substantially in parallel to the well that extends at the inner side of the transponder as viewed in the radial direction of the tire. | 12-11-2008 |
20080303672 | VALVE-INTEGRATED TRANSPONDER - A valve-integrated transponder includes an air valve and a casing that are integrated with each other, and is disposed within a tire. The air valve is press-fitted to a valve hole in a wheel rim. The casing houses a substrate having a detecting element mounted thereon, an inverse F antenna element, a supporting member, and the like, and is provided with a partition-like reinforcement rib. The reinforcement rib extends along an extension of an axis of the air valve and is loosely fitted in a recessed slot of the supporting member. The antenna element supported by the supporting member has a substantially line symmetrical shape where a pair of radiation conductors symmetrically extend away from each other. | 12-11-2008 |
Masahiro Shigihara, Minato-Ku JP
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20100070839 | CYCLIC CODE PROCESSING CIRCUIT, NETWORK INTERFACE CARD, AND CYCLIC CODE PROCESSING METHOD | 03-18-2010 |
Seiji Shigihara, Kawasaki JP
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20100175037 | METHOD, APPARATUS, AND PROGRAM FOR CORRECTING HOLD ERROR - A hold error correction method for complicated large scale integration in a semiconductor is provided. Based on timing analyses, hold error path start point information including a set of a hold error amount at a start point and a minimum value in set-up margins for all data paths starting from the start point, and hold error path end point information including a set of a hold error amount at an end point and a minimum value in set-up margins for all data paths reaching the end point, in association with a failed hold error path, is obtained. The hold error path is classified based on whether the hold error is correctable according to the obtained information. The correctable hold error path is grouped based on a certain criterion. Finally, which of the start point and the end point a delay buffer is inserted into is determined per group. | 07-08-2010 |
Takanori Shigihara, Hyogo JP
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20080289971 | Ultrasonic Cleaning Method and Device - An ultrasonic cleaning method and an ultrasonic cleaning device are provided, which are capable of performing simultaneously cleaning and sterilization of medical appliances or the like, and which can also be used for washing hands for disinfection without any special waste water treatment. The ultrasonic cleaning method for cleaning an object to be cleaned by using an ultrasonic wave includes the steps of putting cleaning fluid and the object to be cleaned in a cleaning tank ( | 11-27-2008 |
Takayoshi Shigihara, Toyota-Shi JP
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20140319880 | VEHICLE BODY FRONT SECTION STRUCTURE - In a vehicle body front section structure according to the present invention, as well as a pair of left and right front side support portions and a pair of left and right rear side support portions that support a suspension member from the vehicle body, the suspension member is also coupled to a dash panel by coupling members. The coupling members are provided in the vehicle front-rear direction between the pair of left and right front side support portions and the pair of left and right rear side support portions, and provided in the vehicle width direction between the front side support portion and rear side support portion on the vehicle left side and the front side support portion and rear side support portion on the vehicle right side. | 10-30-2014 |
Takayoshi Shigihara, Toyota-Shi Aichi-Ken JP
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20150084376 | STRUCTURE OF FLOOR PANEL OF VEHICLE BODY - Disclosed is a structure of a floor panel which includes a rear floor panel that is provided in a vehicle body, and has a storage portion for a spare tire; a rear crossmember that is installed on a front side of the rear floor panel so as to extend in a lateral direction of the vehicle body, and is joined to the rear floor panel; a rear end panel that is installed on a rear side of the rear floor panel | 03-26-2015 |
Tomohiko Shigihara, Hagagun JP
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20140110054 | MANUFACTURING METHOD FOR COMPOSITE STRUCTURE - There is provided a manufacturing method for a composite structure that makes it possible to join a thermoplastic resin molding, which serves as a second member for reinforcement, while at the same time preventing the deformation of a first member to be reinforced. The second member contains magnetic substances in a portion thereof that is to be abutted on the first member. The second member is introduced into an induction heating unit and subjected to induction heating, thereby heating the abutting portion of the second member to join the second member to the first member. | 04-24-2014 |
Tomohiko Shigihara, Tochigi JP
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20100237536 | MOLD FOR IN-MOLD COATING AND IN-MOLD COATING METHOD - A mold for in-mold coating is provided that can ensure a space through which a coating material for performing in-mold coating flows. The mold for in-mold coating includes an undercut-shaped recess | 09-23-2010 |
20130059125 | MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF COMPOSITE STRUCTURAL MEMBER - A composite structural member made of a plate and a thermoplastic resin reinforcing member is manufactured by: continuously supplying the reinforcing member; cutting the reinforcing member; heating the reinforcing member; and pressing the heated reinforcing member to the plate. | 03-07-2013 |
Yoshihito Shigihara, Osaka JP
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20110288424 | HUMAN FATIGUE ASSESSMENT DEVICE AND HUMAN FATIGUE ASSESSMENT METHOD - A human fatigue assessment device capable of performing highly accurate fatigue assessment is provided. The human fatigue assessment device ( | 11-24-2011 |
20140180145 | HUMAN FATIGUE ASSESSMENT DEVICE AND HUMAN FATIGUE ASSESSMENT METHOD - A human fatigue assessment device capable of performing highly accurate fatigue assessment is provided. The human fatigue assessment device includes: a physiological signal measuring unit configured to measure a heartbeat or pulse wave of a user as a physiological signal; a feature value extracting unit configured to extract feature values each indicating amount of parasympathetic nerve activity and each obtained from the measured physiological signal measured; a storage unit in which the extracted feature values are stored; and a fatigue type determining unit configured to determine a type of fatigue of the user as to whether the fatigue of the user is due to a first work or due to a second work more monotonous than the first work, using the extracted feature values. | 06-26-2014 |
Yusuke Shigihara, Yasugi JP
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20140144199 | CLOSED-DIE FORGING METHOD AND METHOD OF MANUFACTURING FORGED ARTICLE - Provided are: a closed-die forging method capable of preventing a temperature decrease in a to-be-forged member during forging, easy temperature monitoring during forging, and causing cavity end portions of a die to be filled with the to-be-forged member; and a method of manufacturing a forged article using the closed-die forging method. The closed-die forging method, which involves placing a heated to-be-forged member on a lower die and hammer-forging the to-be-forged member with a reciprocating upper die, includes covering the whole of a portion of the to-be-forged member that contacts the lower die with a metal heat-insulation member prior to forging, except for at least a part of a portion that contacts an upper die during forging, and then forging the to-be-forged member integrally with the metal heat-insulation member. Preferably, the to-be-forged member is a superalloy and the metal heat-insulation member is stainless steel. Further preferably, the to-be-forged member is forged into a disk shape. The method of manufacturing a forged article includes heat-treating a forged material obtained by the closed-die forging method at temperatures not lower than recrystallization temperature. | 05-29-2014 |
Yusuke Shigihara, Yasugi-Shi JP
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20130298401 | MANUFACTURING METHOD FOR BLADE MATERIAL AND MANUFACTURING DEVICE FOR BLADE MATERIAL - Provided are a manufacturing method for a blade material and a manufacturing device for a blade material, by which a long blade material can be manufactured without using a large-sized press forging machine. A manufacturing method for a blade material, in which hot forging is sequentially performed by molds from the root side to a blade (vane) tip, wherein when a root-side portion is grasped and a material to be forged is restrained by a mold, twisting is performed on a region between the grasped portion and the restrained portion. A manufacturing method for a blade material, in which hot forging and twisting are repeated, is preferable, and a manufacturing method for a blade material, in which hot forging is performed while molds are sequentially changed, is more preferable. | 11-14-2013 |