Patent application number | Description | Published |
20080220592 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PLANARIZATION METHOD - A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach. | 09-11-2008 |
20080224145 | Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof - A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr. | 09-18-2008 |
20110084197 | Solid-State Image Sensor - A pixel output line is provided for each of the pixels two-dimensionally arrayed in a pixel area. The pixel output lines are extended to a memory area, and a memory unit is connected to each of those lines. The memory unit includes a writing-side transistor, a reading-side transistor and a plurality of memory sections for holding signals for 104 image frames. A photocharge storage operation is simultaneously performed at all the pixels, and the thereby produced signals are outputted to the pixel output lines. In the memory unit, with the writing-side transistor in the ON state, the sampling transistor of a different memory section is sequentially turned on for each exposure cycle so as to sequentially hold a signal in the capacitor of each memory section. After a burst imaging operation is completed, all the pixel signals are sequentially read. Unlike CCDs, the present device does not simultaneously drive all gate loads, so that it can be driven at high speeds with low power consumption. Thus, the burst imaging can be performed at higher speeds than ever before. | 04-14-2011 |
20110085066 | Solid-State Image Sensor and Drive Method for the Same - A burst reading memory section ( | 04-14-2011 |
20120112255 | Solid-State Image Sensor - A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained. | 05-10-2012 |
20130320477 | METHOD OF ETCHING OF SOI SUBSTRATE, AND BACK-ILLUMINATED PHOTOELECTRIC CONVERSION MODULE ON SOI SUBSTRATE AND PROCESS OF MANUFACTURE THEREOF - A method of etching capable of rapidly and flatly performing wet etching on a Si substrate using fluonitric acid represented by HF(a)HNO | 12-05-2013 |
20140097510 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER AND SOLID-STATE IMAGING DEVICE - Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulator layer, and is smaller than a penetration depth of ultraviolet light. | 04-10-2014 |
20140256065 | ETCHING METHOD - There is provided an etching method. A temperature at a plurality of predetermined positions on an upper surface of an Si substrate is measured during the etching processing. The etching processing includes supplying an etching solution to the upper surface of the Si substrate. An exothermic reaction occurs in the etching processing. The upper surface is heated or cooled depending on the measured value. | 09-11-2014 |
20140291485 | SOLID-STATE IMAGING DEVICE - To remove reset noise in pixels while the circuit configuration is kept in low power consumption, a device includes pixels arranged in row and column directions, in which each of the pixels includes a charge-voltage conversion terminal for voltage-converting signal charges transferred from a photoelectric conversion element, and a first reset means for resetting a voltage at the charge-voltage conversion terminal; first signal lines, each of which is connected to the pixels in each column; a scanning means for selecting one row among others; and a second reset means for resetting voltages at the signal lines. In the device, on each selected row, by voltage signals at the charge-voltage conversion terminals and the converted voltage signals from the transferred signal charges are read out to and stored in the signal lines in a floating potential state, and then are output. | 10-02-2014 |
20140293105 | SOLID-STATE IMAGING DEVICE - Reset noise in pixels is removed. A solid-state imaging device includes pixels arranged in row and column directions, in which each of the pixels includes a charge-voltage conversion terminal for voltage-converting signal charges transferred from a photoelectric conversion element by a transfer means, and a first reset means for resetting a voltage at the charge-voltage conversion terminal; signal lines, each of which is connected to the pixels in each column; a scanning means for selecting one row among others; and constant current circuit elements for supplying constant current to the signal lines. In the device, within each selected row, each reset voltage at each charge-voltage conversion terminal and a converted voltage from transferred signal charges are read out to and stored in each signal line supplied with constant current by each constant current circuit element, and then output. | 10-02-2014 |
20140306344 | WIRING STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING WIRING STRUCTURE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided with a wiring structure. The wiring stracture has a damascene wiring structure including a metal wiring. The metal wiring is provided in direct contact with an upper surface of a barrier film (SiC(O, N) film) containing silicon (Si), carbon (C), and at least one of oxygen (O) and nitrogen (N) as constituent components. | 10-16-2014 |
20150048239 | PHOTODIODE ARRAY FOR SPECTROMETRIC MEASUREMENTS AND SPECTROMETRIC MEASUREMENT SYSTEM - A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO | 02-19-2015 |