Patent application number | Description | Published |
20090073291 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 03-19-2009 |
20090295974 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF RESETTING THE SAME - A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance. | 12-03-2009 |
20100155787 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor. | 06-24-2010 |
20110069358 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 03-24-2011 |
20110157440 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 06-30-2011 |
20120113305 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF RESETTING THE SAME - A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance. | 05-10-2012 |
20120146100 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region. | 06-14-2012 |
20120281262 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 11-08-2012 |
20130187199 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type forming a pn-junction with the first semiconductor region, and a third semiconductor region of the first conductive type disposed on the second semiconductor region. In addition, a transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region of the second conductivity type, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region, disposed under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region. | 07-25-2013 |
20140106496 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view. | 04-17-2014 |