Patent application number | Description | Published |
20100032839 | ELECTRODE STRUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Hb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-11-2010 |
20100200863 | ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THOSE - A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11. | 08-12-2010 |
20120028456 | ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-02-2012 |
20140230873 | THERMOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND HEAT RADIATION FIN - A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities. | 08-21-2014 |
20150101648 | THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION SYSTEM AND MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION ELEMENT - A thermoelectric conversion element includes a cable. The cable includes a first member extended in the axis direction of the cable, and a second member extended in the axis direction to cover at least a part of the outer face of the first member. One of the first and second members is a magnetic body. The other of the first and second members is a conductive body formed of material exhibiting a spin orbit coupling. | 04-16-2015 |
20150194587 | THERMOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD FOR SAME - A thermoelectric conversion element includes a thermoelectric conversion sheet possessing flexibility. The thermoelectric conversion sheet includes a magnetic layer, an electricity-generating layer that is formed on the magnetic layer so as to contact with the magnetic layer and that is formed of a material exhibiting spin orbit coupling, and a first electrode and a second electrode formed on the electricity-generating layer so as to contact with the electricity-generating layer. The first electrode and the second electrode extend in a longitudinal direction of the thermoelectric conversion sheet, and are separated from each other in a first direction perpendicular to the longitudinal direction. | 07-09-2015 |
20150236246 | THERMOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A thermoelectric conversion element includes a magnetic layer which has a component magnetized in an in-plane direction, an electromotive layer which includes a material with spin orbit coupling, and a spin injection layer. The spin injection layer is provided between the magnetic layer and the electromotive layer and magnetically coupled to both the magnetic layer and the electromotive layer. A magnetic moment per unit volume of the spin injection layer is smaller than the magnetic moment per unit volume of the magnetic layer. | 08-20-2015 |
20150303363 | THERMOELECTRIC CONVERSION ELEMENT, USE OF THE SAME, AND METHOD OF MANUFACTURING THE SAME - An object of the present invention is to provide a thermoelectric conversion element that can demonstrate satisfactory thermoelectric conversion performance, and also has flexibility or can be mounted on a surface having irregularities or a curved surface, a method of manufacturing such a thermoelectric conversion element, and a method of using such a thermoelectric conversion element. A thermoelectric conversion element according to the present invention includes a columnar crystal ferrite layer and an electromotive film formed on the columnar crystal ferrite layer. The electromotive film is configured to generate an electromotive force in an in-plane direction by an inverse spin Hall effect. Columnar crystal grains of the columnar crystal ferrite layer include a major axis a of not less than 200 nm and a minor axis b of not more than 500 nm where a>b. | 10-22-2015 |