Patent application number | Description | Published |
20080230180 | Processing Equipment for Object to be Processed - Processing equipment for an object to be processed is provided with a process container, the internal of which can be evacuated, a gas introducing means for introducing a prescribed gas into the process container, a supporting table provided in the process container, a ring-shaped supporting part provided on the supporting table for supporting the object to be processed, a plurality of thermoelectric conversion elements provided on an upper plane of the supporting table on an inner side of the supporting part, an element storing space evacuating means for evacuating inside the element storing space formed by a lower plane of the object to be treated, which is supported by the supporting part, an upper plane of the supporting table and the supporting part. | 09-25-2008 |
20100038833 | ANNEALING APPARATUS - Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber | 02-18-2010 |
20100150534 | HEAT TREATING DEVICE - A heat treating device including a treatment room for accommodating therein a substrate, a plurality of light sources, which is disposed above the treatment room, for irradiating the substrate, a first reflector, whose inner surface is a reflective surface of a dome shape, for reflecting and directing a part of light emitted from each light source to the substrate, and a plurality of second reflectors, each of which is provided for each light source, for reflecting and focusing light emitted from each light source and directing it to the substrate. The reflective surface of each of the second reflectors is a part of a spheroidal surface or a curved surface approximate to it surrounding a first focal point in such a manner that the first focal point is formed at a position near each light source and a second focal point is formed on a side of the substrate. | 06-17-2010 |
20100164315 | PROCESSING APPARATUS - A rotary floater ( | 07-01-2010 |
20100314377 | ANNEALING DEVICE - Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin. | 12-16-2010 |
20110018651 | POWER COMBINER AND MICROWAVE INTRODUCTION MECHANISM - A power combiner | 01-27-2011 |
20110024407 | ANNEALING APPARATUS - An annealing apparatus is provided with a chamber | 02-03-2011 |
20110033175 | ANNEALING APPARATUS - An annealing apparatus includes heating sources | 02-10-2011 |
20110174778 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus performs a process on a substrate by using plasma. The plasma processing apparatus includes a processing chamber; a mounting table which is located in the processing chamber and on which a substrate is mounted; a gas shower head formed of a conductive material provided to face the mounting table and having at the bottom surface thereof a plurality of gas injection openings for supplying a processing gas into the processing chamber; an induction coil to which a high frequency current is supplied to generate an inductively coupled plasma in a region surrounding a space below the gas shower head; a negative voltage supplying unit for applying a negative DC voltage to the gas shower head to allow an electrical field, which is induced by the induction coil, to be drawn to a central portion of the processing region; and a unit for evacuating the processing chamber. | 07-21-2011 |
20110240222 | PLASMA PROCESSING APPARATUS - A gas shower head having many gas discharging ports formed on the lower surface is provided on the top wall of a processing container such that the gas shower head faces a placing table on which a substrate is to be placed, and the top wall of the processing container at the periphery of the gas shower head is composed of a dielectric material. A coil is provided on the dielectric material, and the phase of high frequency waves to be supplied to the gas shower head and the coil is adjusted so that the phase of the electrical field in a processing region above the substrate and the phase of the electrical field in the peripheral region surrounding the processing region are same or opposite to each other. | 10-06-2011 |
20120118504 | PROCESSING APPARATUS AND METHOD FOR OPERATING SAME - A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus. | 05-17-2012 |
20130168390 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof. | 07-04-2013 |
20130180661 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end. | 07-18-2013 |
20140339981 | ANTENNA FOR PLASMA GENERATION, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber. | 11-20-2014 |