Patent application number | Description | Published |
20110018067 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming a first and a second isolation insulating film to define a first, a second, a third and a fourth region, forming a first insulating film, implanting a first impurity of a first conductivity type through the first insulating film into the first, the second and the fourth region at a first depth, forming a second insulating film thinner than the first insulating film, implanting a second impurity of a second conductivity type through the second insulating film into the third region at a second depth in the semiconductor substrate, implanting a third impurity of the second conductivity type into the third region at a third depth shallower than the second depth, forming a first transistor of the first conductivity type in the third region, and forming a second transistor of the second conductivity type in the fourth region. | 01-27-2011 |
20110057253 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area. | 03-10-2011 |
20120038004 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A first insulating film is formed above a semiconductor substrate with a device isolation insulating film defining a device region, a gate electrode and source/drain region formed. The first insulating film is etched, leaving the first insulating film in a recess formed in an edge of the device isolation insulating film. A second insulating film applying a stress to the semiconductor substrate is formed after etching the first insulating film. | 02-16-2012 |
20120161230 | MOS TRANSISTOR AND FABRICATION METHOD THEREOF - A disclosed MOS transistor has a drain region offset from a gate electrode structure, wherein the gate electrode structure includes at least a first gate electrode and a second gate electrode such that the second gate electrode is located at the drain side of the first gate electrode and the second gate electrode is isolated from the first gate electrode by an insulation film, and wherein the first and second gate electrodes are formed respectively on a first gate insulation film and a second gate insulation film having an increased thickness as compared with the first gate insulation film. | 06-28-2012 |
20120273853 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area. | 11-01-2012 |
20120273896 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area. | 11-01-2012 |
20120276710 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area. | 11-01-2012 |
20130149827 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second width wider than the first width, and the first source/drain region has a first area and the second source/drain region has a second area larger than the first area. | 06-13-2013 |