Shigeo Kondo
Shigeo Kondo, Saitama-Shi JP
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20120007163 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film. | 01-12-2012 |
20130148430 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device according to one embodiment includes: a cell array; and a data writing unit that repeatedly executes a write loop including a programming operation of applying a program voltage to a selected word line and a passage voltage to non-selected word lines during writing of data, in which, when a difference between the passage voltage used in an n-th write loop and the passage voltage used in an n+1-th write loop is expressed as ΔVn and when a condition of L06-13-2013 | |
20150187424 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device according to one embodiment includes: a cell array; and a data writing unit that repeatedly executes a write loop including a programming operation of applying a program voltage to a selected word line and a passage voltage to non-selected word lines during writing of data, in which, when a difference between the passage voltage used in an n-th write loop and the passage voltage used in an n+1-th write loop is expressed as ΔVn and when a condition of L07-02-2015 | |
Shigeo Kondo, Hirakata-Shi JP
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20140072883 | ELECTROCHEMICAL DEVICE - An electrochemical device manufactured using an electrode layer in which severe increase of electrode resistance is prevented and/or a solid electrolyte layer in which severe decrease of ion conductivity of a solid electrolyte is prevented is provided. The electrochemical device includes a pair of electrode layers, and a solid electrolyte layer provided between the pair of electrode layers, wherein at least one layer of the electrode layers and the solid electrolyte layer is composed of first particles each providing a function of the at least one layer, second particles and a binder which is composed of an organic polymer and binds the first and second particles, and wherein the at least one layer is formed from a mixture material containing the first particles and binder particles, each of the binder particles including the second particle and the binder carried on at least a part of a surface thereof. | 03-13-2014 |
20150086874 | ELECTROCHEMICAL DEVICE - An electrochemical device manufactured using an electrode layer in which severe increase of electrode resistance is prevented and/or a solid electrolyte layer in which severe decrease of ion conductivity of a solid electrolyte is prevented is provided. The electrochemical device includes a pair of electrode layers, and a solid electrolyte layer provided between the pair of electrode layers, wherein at least one layer of the electrode layers and the solid electrolyte layer is composed of first particles each providing a function of the at least one layer, second particles and a binder which is composed of an organic polymer and binds the first and second particles, and wherein the at least one layer is formed from a mixture material containing the first particles and binder particles, each of the binder particles including the second particle and the binder carried on at least a part of a surface thereof. | 03-26-2015 |
Shigeo Kondo, Mie-Ken JP
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20140140137 | NAND-TYPE NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a NAND-type non-volatile semiconductor storage includes a memory cell array and a control circuit. The memory cell array has a memory string in which more than one of memory cells are connected in series, a word line connected to more than one of memory cells, and a bit line connected to one end of the memory string. The control circuit performs a program operation, a verify operation, and a step-up operation in a program operation loop. The control circuit performs the program operation to apply a program voltage to the word line. The control circuit performs the verify operation after the program operation. The control circuit performs the step-up operation to program a memory cell judged to be insufficiently programmed at the verify-read operation using a step-up voltage. The control circuit sets the step-up voltage increasing, each time the step-up operation is performed. | 05-22-2014 |
Shigeo Kondo, Yokkaichi-Shi JP
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20150262693 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to embodiment comprises: a memory cell array configured to include word lines and memory strings, the memory strings having memory cells connected in series, the memory cells being connected to the word lines; and a control unit configured to execute a read sequence to read data page-by-page, the control unit, during the read sequence on a first page, executing a read operation by applying a first read-pass voltage to a second word line and reading data in the first page, and executing a re-read operation by applying a second read-pass voltage different from the first read-pass voltage to the second word line and reading data in a first cell in a case where data read from a first cell group in the first page coincides with a specific first reference pattern. | 09-17-2015 |