Patent application number | Description | Published |
20080230834 | Semiconductor apparatus having lateral type MIS transistor - A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor. | 09-25-2008 |
20090233565 | Receiving decive - A receiving device is provided capable of avoiding reception of unnecessary energy when a signal waveform actually changes on a receiving side. An impedance control circuit includes a sensing unit to sense one or more of a voltage, current, or power of a signal to be received by a receiving circuit. The impedance control unit varies an input impedance according to the change in the sensed one or more quantities so that the received signal will be reflected. Thus the excess energy of the signal is reflected and fed to any other receiving circuit achieving stable communications. | 09-17-2009 |
20090296830 | SIGNAL RECEIVER FOR RECEIVING DIFFERENTIAL SIGNAL VIA TRANSMISSION LINE - A signal receiver includes: a receiving circuit that receives a differential signal via a transmission line, which includes a pair of signal wires for transmitting the differential signal; and an impedance control circuit that controls an input impedance so as to reduce a common mode noise. The impedance control circuit includes a detection element for detecting at least one of a voltage, a current and an electric power of the common mode noise. The impedance control circuit controls the input impedance in accordance with change of the at least one of the voltages the current and the electric power of the common mode noise. | 12-03-2009 |
20100102857 | Switching circuit and driving circuit for transistor - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 04-29-2010 |
20100177829 | Receiving device including impedance control circuit and semiconductor device including impedance control circuit - A receiving device includes a receiving circuit and an impedance control circuit. The receiving circuit receives a signal transmitted through a communication line. The impedance control circuit is coupled with the receiving circuit and has a detecting part. The detecting part detects a physical value of the signal and the physical value includes at least one of a voltage, an electric current, and an electric power. The impedance control circuit changes an input impedance based on the detected value so that a ringing of the signal is reduced. | 07-15-2010 |
20110073904 | Semiconductor device having SOI substrate and method for manufacturing the same - A semiconductor device includes: a SOI substrate; a semiconductor element having first and second impurity layers disposed in an active layer of the SOI substrate, the second impurity layer surrounding the first impurity layer; and multiple first and second conductive type regions disposed in a part of the active layer adjacent to an embedded insulation film of the SOI substrate. The first and second conductive type regions are alternately arranged. The first and second conductive type regions have a layout, which corresponds to the semiconductor element. | 03-31-2011 |
20110084730 | TRANSMISSION APPARATUS FOR DIFFERENTIAL COMMUNICATION - A transmission apparatus for differential communication includes a driver bridge circuit and a pair of noise protection circuits. The driver bridge circuit includes four output devices that are independently connected between each of a pair of transmission lines and a power line or a ground line. Each noise protection circuit is provided to a corresponding transmission lines. Each noise protection circuit includes a ground potential detector and an impedance controller. The ground potential detector detects a potential of the corresponding transmission line with respect to the ground line. The impedance controller causes an impedance of the corresponding transmission line with respect to the ground line to become equal to an impedance of the other transmission line with respect to the ground line, when the detected potential becomes outside a predetermined potential range. | 04-14-2011 |
20110135014 | Transmission device for differential communication - In a transmission device for differential communication, a first cathode-side element part is coupled between a first communication line and a cathode-side power supply line, a second cathode-side element part is coupled between a second communication line and the cathode-side power supply line, a first anode-side element part is coupled between the first communication line and an anode-side power supply line, and a second anode-side element part is coupled between the second communication line and the anode-side power supply line. A driving portion drives the element parts based on transmission data input from an outside. A target potential generating portion generates target potentials of the element parts based on potentials of the first communication line and the second communication line. | 06-09-2011 |
20110210766 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 09-01-2011 |
20110291157 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR - A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer. | 12-01-2011 |
20110298446 | CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME - A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell. | 12-08-2011 |
20120061726 | LATERAL INSULATED-GATE BIPOLAR TRANSISTOR - A N-channel lateral insulated-gate bipolar transistor includes a semiconductor substrate, a drift layer, a collector region, a channel layer, an emitter region, a gate insulation film, a gate electrode, a collector electrode, an emitter electrode. The collector region includes a high impurity concentration region having a high impurity concentration and a low impurity concentration region having a lower impurity concentration than the high impurity concentration region. The collector electrode is in ohmic contact with the high impurity concentration region and in schottky contact with the low impurity concentration region. | 03-15-2012 |
20120139079 | DIODE - A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface. | 06-07-2012 |
20120182051 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 07-19-2012 |
20130075877 | SEMICONDUCTOR DEVICE HAVING LATERAL ELEMENT - A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×10 | 03-28-2013 |
20130168730 | SEMICONDUCTOR DEVICE HAVING LATERAL INSULATED GATE BIPOLAR TRANSISTOR - A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of the drift layer, a second conductivity type channel layer formed in the surface portion of the drift layer, a first conductivity type emitter region formed in a surface portion of the channel layer, and a hole stopper region formed in the drift layer and located between the collector region and the emitter region. Holes are injected from the collector region into the drift layer and flow toward the emitter region through a hole path. The hole stopper region blocks a flow of the holes and narrows the hole path to concentrate the holes. | 07-04-2013 |
20140048911 | LATERAL SEMICONDUCTOR DEVICE - A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other. | 02-20-2014 |
20140070271 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR - A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer. | 03-13-2014 |