Shiang-Yu
Shiang-Yu Chen, Hsinchu TW
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20120273883 | HIGH VOLTAGE DEVICES AND METHODS FOR FORMING THE SAME - A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is disposed over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is disposed over a second well region of a second dopant type. The first thickness is larger than the second thickness. An isolation structure is disposed between the gate dielectric structure and a drain region disposed within the first well region. A gate electrode is disposed over the gate dielectric structure. | 11-01-2012 |
Shiang-Yu Tsai, New Taipei City TW
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20130163127 | ESD PROTECTION CIRCUIT - An electrostatic discharge protection circuit includes an input node coupled to receive an input signal and an output node coupled to output the input signal to an internal circuit. A first inductor is coupled to the input node and to the output node, and a second inductor is coupled to the output node and to a first power supply node through a resistance. A plurality of protection devices are coupled to the first and second inductors and are disposed in parallel with each other. | 06-27-2013 |
Shiang-Yu Wang, Taipei TW
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20100117060 | Quantum dot infrared photodetector apparatus - The present invention is disclosed that a device capable of normal incident detection of infrared light to efficiently convert infrared light into electric signals. The device comprises a substrate, a first contact layer formed on the substrate, an active layer formed on the first contact layer, a barrier layer formed on the active layer and a second contact layer formed on the barrier layer, wherein the active layer comprises multiple quantum dot layers. | 05-13-2010 |