Patent application number | Description | Published |
20080315114 | HIGH VOLTAGE INSULATOR FOR PREVENTING INSTABILITY IN AN ION IMPLANTER DUE TO TRIPLE-JUNCTION BREAKDOWN - A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum. | 12-25-2008 |
20120068081 | ION BEAM TUNING - A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin. | 03-22-2012 |
20120088035 | PLATEN CONTROL - A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed. | 04-12-2012 |
20130255577 | Method and Apparatus for Generating High Current Negative Hydrogen ION Beam - An apparatus to generate negative hydrogen ions includes an ion source operative to generate positive hydrogen ions, a first component to adjust positive molecular hydrogen ion species in the ion source, a second component to adjust extraction voltage for extraction of the positive molecular hydrogen ions from the ion source, and a charge exchange cell comprising charge exchange species to convert the extracted positive molecular hydrogen ions to negative hydrogen ions. The adjusted extraction voltage is effective to generate an ion energy to maximize negative ion current yield in the charge exchange cell based upon a product of extraction efficiency of the positive molecular hydrogen ions and a peak in charge exchange efficiency for converting a species of the positive molecular hydrogen ions to negative hydrogen ions through charge exchange between the extracted hydrogen ions and charge exchange species. | 10-03-2013 |
20130256526 | HYBRID ELECTROSTATIC LENS FOR IMPROVED BEAM TRANSMISSION - A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam. | 10-03-2013 |
20130256527 | HYBRID ELECTROSTATIC LENS FOR IMPROVED BEAM TRANSMISSION - A hybrid electrostatic lens is used to shape and focus an ion beam. The hybrid electrostatic lens comprises an Einzel lens defined by an elongated tube having a first and second ends and a first electrode disposed at the first end and a second electrode disposed at the second end. The elongated tube is configured to receive a voltage bias to create an electric field within the Einzel lens as the ion beam travels through the hybrid electrostatic lens. The hybrid electrostatic lens further includes a quadrupole lens having a first stage and a second stage, where each of the stages is defined by a plurality of electrodes turned 90° with respect to each other to define a pathway in the Z direction through the elongated tube. The Einzel lens focuses the ion beam and the quadrupole lens shapes the ion beam. | 10-03-2013 |
20140110596 | APPARATUS FOR TREATING ION BEAM - An ion beam scanning assembly includes a set of scanning electrodes defining a gap to accept an ion beam and scan the ion beam in a first plane, and a multipole electrostatic lens system comprising a plurality of electrodes arranged along a portion of a path of travel of the ion beam bounded by the pair of scanning electrodes, the multipole electrostatic lens system configured to shape the ion beam in a direction perpendicular to the first plane. | 04-24-2014 |
20140326179 | APPARATUS AND TECHNIQUES FOR CONTROLLING ION IMPLANTATION UNIFORMITY - A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold. | 11-06-2014 |