Sheng-Shian
Sheng-Shian Li, Yangmei Township TW
Patent application number | Description | Published |
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20110148252 | MEMS VIBRATING STRUCTURE USING A SINGLE-CRYSTAL PIEZOELECTRIC THIN-FILM LAYER HAVING DOMAIN INVERSIONS - The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate. | 06-23-2011 |
20130020279 | PLANARIZED SACRIFICIAL LAYER FOR MEMS FABRICATION - A method of forming a device is provided. The method includes providing a substrate, forming a sacrificial layer over the substrate, and forming a field layer around the sacrificial layer. After formation, both the sacrificial layer and the field layer are planarized. A component is then formed over the planarized sacrificial layer and the planarized field layer. The component has a first electrode and a second electrode and a single crystal wafer disposed between the first and second electrodes. The component includes anchors disposed substantially over the field layer. Once the component is formed, the sacrificial layer is released with an etchant having a selectivity for the sacrificial layer wherein a cavity is formed beneath the component. The cavity allows free movement within the cavity during operation of the device. The etchant does not release the field layer and the component so the field layer remains below the anchors. | 01-24-2013 |
Sheng-Shian Li, Taoyuan County TW
Patent application number | Description | Published |
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20140002200 | MICROMECHANICAL RESONATOR OSCILLATOR STRUCTURE AND DRIVING METHOD THEREOF | 01-02-2014 |
20140002201 | MEMS RESONATOR, MANUFACTORING METHOD THEREOF, AND SIGNAL PROCESSING METHOD USING MEMS RESONATOR | 01-02-2014 |
20140339953 | MEMS RESONATOR ACTIVE TEMPERATURE COMPENSATION METHOD AND THERMALLY-ACTUATED MEMS RESONATOR - A MEMS resonator active temperature compensation method is provided. The MEMS resonator active temperature compensation method includes: a MEMS resonator is provided, wherein a structural resistance of the MEMS resonator is varied with an environmental temperature; a structural resistance shift value is formed by a variation of the environmental temperature; an electrical circuit is provided, wherein the electrical circuit is electrically connected with the MEMS resonator for providing an adjustment mechanism to the MEMS resonator; and a compensation value is provided from the adjustment mechanism for controlling the structural resistance shift value. | 11-20-2014 |
Sheng-Shian Li, Hsinchu TW
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20150326199 | ACTIVE TYPE TEMPERATURE COMPENSATION RESONATOR STRUCTURE - An active type temperature compensation resonator structure is provided, including a resonant body and a temperature compensation element embedded in the resonant body for a compensation current to pass therethrough. The temperature compensation element has a specified temperature coefficient of resistance that reflects the temperature of the resonant body. The magnitude of the compensated current corresponds to the reflected temperature of the resonant body. With the active type temperature compensation resonator structure, the temperature of the resonant body can be accurately reacted by the specified temperature coefficient of resistance, such that the temperature compensation element, through which the compensated current passes, can dynamically correspond to the temperature of the resonant body and accurately provide the resonant body with temperature compensation. | 11-12-2015 |
Sheng-Shian Wu, Hsinchu City TW
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20140165380 | METHOD FOR FABRICATING EXHAUST GAS DECONTAMINATION REACTOR - A method for fabricating an exhaust gas decontamination reactor, which is an exhaust gas decontamination pipe or a exhaust gas decontamination honeycombed structure, comprises steps: respectively coating a cathode layer and an anode layer on an outer wall surface and an inner wall surface of a pipe; and forming an enclosed reducing environment inside an internal channel of the pipe. The method for fabricating an exhaust gas decontamination honeycombed structure comprises steps: respectively coating cathode layers and anode layers on first inner wall surfaces of first passages and second inner wall surfaces of second passages; and forming enclosed reducing environments inside the second passages. Then, the cathode layers function as reaction sites to decontaminate exhaust gas. The present invention needn't arrange a reducing-gas system in the reactor and thus can decrease the volume and fabrication cost thereof. | 06-19-2014 |
20140166477 | MULTILAYER-STRUCTURED EXHAUST GAS DECONTAMINATION REACTOR AND METHOD FOR FABRICATING THE SAME - A multilayer-structured exhaust gas decontamination reactor comprises a frame body, a front filter board, a rear filter board, and electrochemical-catalytic conversion units. The front and rear filter boards are respectively installed at an input end and an output end of the frame body and respectively include a plurality of electrochemical-catalytic conversion units that are arranged alternatively. The input end, the interconnection regions of the front and rear filter boards, and the output end jointly form a channel allowing the exhaust gas to flow. The electrochemical-catalytic conversion units of the invention are exposed to the channel to function as the reaction sides for decontaminating the exhaust gas. Thus, the invention does not need to use an additional reducing gas system, thereby can reduce the volume and lower production cost of the exhaust gas decontamination reactor. | 06-19-2014 |