Patent application number | Description | Published |
20080296701 | ONE-TIME PROGRAMMABLE READ-ONLY MEMORY - A one-time programmable read-only memory (OTP-ROM) including a substrate, a first doped region, a second doped region, a gate dielectric layer, a first gate and a second gate. The substrate is of a first conductive type. The first doped region and the second doped region are of a second conductive type and are separately disposed in the substrate. The gate dielectric layer is disposed on the substrate between the first doped region and the second doped region. The first gate and the second gate are disposed on the gate dielectric layer, respectively. The first gate is adjacent to the first doped region, while the second gate is adjacent to the second doped region. Here, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. | 12-04-2008 |
20080316660 | ELECTROSTATIC DISCHARGE AVOIDING CIRCUIT - An electrostatic discharge (ESD) avoiding circuit comprises an ESD detecting unit and a switch unit. The ESD detecting unit is coupled to a first conductive path for detecting whether the ESD happened or not. The switch unit is coupled between the first conductive path and a core circuit for switching whether the first conductive path is conducted to the core circuit or not according to a detection result of the ESD detecting unit. The ESD avoiding circuit can avoid an electrostatic current transmitting to the core circuit when the ESD is happened, and the ESD avoiding circuit can make the normal signal/voltage providing to the core circuit for operating when the ESD isn't happened. | 12-25-2008 |
20090039429 | SOI MOSFET DEVICE WITH REDUCED POLYSILICON LOADING ON ACTIVE AREA - Silicon-on-insulator (SOI) devices with reduced polysilicon loading on an active area uses at least one dielectric layer resistant to silicidation to separate at least one body contact region from source/drain regions, thus reducing gate capacitance and improving device performance. The SOI devices may be used in full depletion type transistors or partial depletion type transistors. | 02-12-2009 |
20090091870 | ESD AVOIDING CIRCUITS BASED ON THE ESD DETECTORS IN A FEEDBACK LOOP - When an electrostatic discharge event occurs to a connection pad of a chip, an electrostatic discharge detector layout in a feedback loop is able to detect an induced electrostatic discharge voltage for generating a control signal. A pass transistor can be turned off by the control signal for isolating the induced electrostatic discharge voltage, and the internal circuit of the chip can be protected from being damaged by the induced electrostatic discharge voltage. Furthermore, the designed circuit based on electrostatic discharge isolation technique for protecting the internal circuit of the chip is compatible with programmable circuits, and the connection pad can be furnished with burning signals or logic signals. | 04-09-2009 |
20090168280 | ELECTROSTATIC DISCHARGE AVOIDING CIRCUIT - An ESD avoiding circuit includes a first ESD protection unit, an ESD detection unit, a switch unit, and an RC filter unit. The first ESD protection unit transmits an ESD current between a first conducting path and a second conducting path. The ESD detection unit is coupled to the first conducting path. The ESD detection unit includes an input terminal, and an output terminal coupled to the first ESD protection unit for detecting an ESD and controlling the first ESD protection unit to conduct the ESD current according to a detection result. The switch unit is coupled between the first conducting path and a core circuit and conducts the first conducting path to the core circuit according to signals of the input terminal and the output terminal of the ESD detection unit. The RC filter unit couples a first voltage to the input terminal of the ESD detection unit. | 07-02-2009 |
20090283814 | SINGLE-POLY NON-VOLATILE MEMORY CELL - A non-volatile memory cell includes an ion well of a semiconductor substrate; a first half-transistor having a firs select gate, a first diffusion region in the ion well, and a first gate dielectric layer between the first select gate and the ion well; a second half-transistor disposed adjacent to the first half-transistor, wherein the second half-transistor has a second select gate spaced apart from the first select gate, a second diffusion region in the ion well, and a second gate dielectric layer between the second select gate and the ion well. The first and second half-transistors are mirror-symmetrical to each other. | 11-19-2009 |
20100002344 | HIGH VOLTAGE TOLERANCE CIRCUIT - A high voltage tolerance circuit includes a first transistor, a second transistor, a third transistor, and a latch-up device. The first transistor and the second transistor are controlled by a control signal. The gate of the third transistor is coupled to a ground through the first transistor. The gate of the third transistor is coupled to an I/O pad through the second transistor. The third transistor is coupled between a power supply and a node. The latch-up device is coupled between the node and the I/O pad. | 01-07-2010 |
20100006924 | ONE-TIME PROGRAMMABLE READ-ONLY MEMORY - A one-time programmable read-only memory (OTP-ROM) including a substrate, a first doped region, a second doped region, a third doped region, a first dielectric layer, a select gate, a second dielectric layer, a first channel, a second channel and a silicide layer is provided. The first doped region, the second doped region and the third doped region are disposed apart in a substrate. The first dielectric layer is disposed on the substrate between the first doped region and the second doped region. The select gate is disposed on the first dielectric layer. The second dielectric layer is disposed on the substrate between the second doped region and the third doped region. The silicide layer is disposed on the first doped region, the second doped region and the third doped region. The OTP-ROM stores data by a punch-through effect occurring between the second doped region and the third doped region. | 01-14-2010 |
20100073985 | METHOD FOR OPERATING ONE-TIME PROGRAMMABLE READ-ONLY MEMORY - A method for operating a one-time programmable read-only memory (OTP-ROM) is provided. The OTP-ROM comprises a first gate and a second gate respectively disposed on a gate dielectric layer between a first doped region and a second doped region on a substrate, wherein the first gate is adjacent to the first doped region and coupled to the first doped region, the second gate is adjacent to the second doped region, the first gate is electrically coupled grounded, and the OTP-ROM is programmed through a breakdown effect. The method comprises a step of programming the OTP-ROM under the conditions that a voltage of the second doped region is higher than a voltage of the first doped region, the voltage of the second gate is higher than a threshold voltage to pass the voltage of the second doped region, and the first doped region and the substrate are at a reference voltage. | 03-25-2010 |
20100123509 | PAD CIRCUIT FOR THE PROGRAMMING AND I/O OPERATIONS - A pad circuit includes a pad, a gate driving circuit, a voltage selection circuit, and an ESD detection/avoiding circuit. The gate driving circuit is used to discharge the ESD induced current. The ESD detection/avoiding circuit is used to isolate the ESD induced voltage. The voltage selection circuit selects a higher voltage from a power/ground terminal and the pad and outputs it to the gate driving circuit, so that the pad circuit can be used for the programming and 1/0 operations. | 05-20-2010 |
20100259858 | POWER SWITCH EMBEDDED IN ESD PAD - A driver circuit has a pad that may be utilized for programming a core circuit or receiving a data signal. A trace high circuit receives a pad voltage signal from the pad, and outputs a trace high voltage approximating a higher voltage of the pad voltage signal and the power supply voltage. A level shifter and a first inverter output a pull high control signal generated by inverting and level shifting a programming control signal. An ESD blocking circuit selectively blocks the pad voltage signal from reaching the core circuit depending on the pad voltage signal and the level-shifted programming control signal. A pull high circuit receives the pull high control signal and the power supply voltage, and outputs the power supply voltage to the core circuit when the pull high control signal is lower than the power supply voltage. | 10-14-2010 |
20110063762 | FLASH MEMORY CIRCUIT WITH ESD PROTECTION - A flash memory circuit with ESD protection includes a plurality of flash memory blocks, a pad, an ESD transistor, a pass transistor, and a gate driving circuit. The gate driving circuit has an inverter circuit for receiving a control voltage and outputting an output voltage, a resistor for receiving a pad voltage from the pad, and a capacitor for delaying a change in the control voltage. The ESD transistor is coupled to the pad, a power supply, and the output terminal of the inverter circuit. The pass transistor is coupled to one of the flash memory blocks and the pad, and is controlled by the output voltage. A well terminal of the pass transistor is coupled to the resistor for keeping the pass transistor turned off during electrostatic discharge through the pad. | 03-17-2011 |
20110235454 | High-voltage selecting circuit which can generate an output voltage without a voltage drop - A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time. | 09-29-2011 |
20110310514 | Electrostatic discharge protection circuit - An electrostatic discharge (ESD) protection circuit is coupled between a first terminal and a second terminal of an integrated circuit. The integrated circuit receives an input signal through the first terminal. The second terminal is coupled to a voltage source. The ESD protection circuit includes a PMOS transistor and a deep N-well NMOS transistor. When the static electricity is inputted to the first terminal, the static electricity flows to the voltage source through the corresponding parasitic diode and the corresponding parasitic bipolar transistor of the PMOS transistor and the deep N-well NMOS transistor. In addition, the input signal is not affected by the ESD protection circuit because the parasitic diodes of the PMOS transistor and the deep N-well NMOS transistor are reversely connected. Thus, the ESD protection circuit prevents the integrated circuit from being damaged by the static electricity and increases the operation voltage range of the input signal. | 12-22-2011 |