Patent application number | Description | Published |
20110114963 | Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same - A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region. | 05-19-2011 |
20110220878 | Thin film transistor and method of manufacturing the same - A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions. | 09-15-2011 |
20110227078 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening. | 09-22-2011 |
20110227079 | THIN FILM TRANSISTOR, DISPLAY DEVICE THEREOF, AND MANUFACTURING METHOD THEREOF - A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern. | 09-22-2011 |
20110233529 | Substrate including thin film transistor, method of manufacturing the substrate, and organic light emitting display apparatus including the substrate - A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes. | 09-29-2011 |
20110248276 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ACTIVE LAYERS OF THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals. | 10-13-2011 |
20110248277 | METHOD OF CRYSTALIZING AMORPHOUS SILICON LAYER, METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME, AND THIN FILM TRANSISTOR USING THE MANUFACTURING METHOD - A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment. | 10-13-2011 |
20110300674 | Method of crystallizing silicon layer and method of forming a thin film transistor using the same - A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer. | 12-08-2011 |
20110312135 | Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor - A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer. | 12-22-2011 |
20120056187 | METHOD OF FORMING POLYCRYSTALLINE SILICON LAYER, AND THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE POLYCRYSTALLINE SILICON LAYER - A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor. | 03-08-2012 |
20120056189 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE USING THE SAME - A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer. | 03-08-2012 |
20120248466 | METAL ENCAPSULATING SHEET AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - A metal encapsulating sheet is configured to cover a display unit on a substrate and includes an insulating base film, and metal wirings on the base film for forming a current path between the display unit and a power supply, wherein connecting units of the metal wirings coupled to the power supply are outside a light-emitting region corresponding to the display unit. | 10-04-2012 |
20120262058 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMTTING DISPLAY APPARATUS AND ENCAPSULATION SHEET USED IN THE METHOD - A method of manufacturing an organic light-emitting display apparatus includes: preparing a substrate including a display unit and peripheral parts; forming a cutting line on an encapsulation sheet to correspond to a boundary line between the display unit and the peripheral parts, wherein a size of the encapsulation sheet corresponds to that of the substrate; adhering the substrate and the encapsulation sheet together; removing the peripheral parts of the substrate; and cutting the encapsulation sheet along the cutting line. According to the method, a step height is not generated between the substrate and the encapsulation sheet when cutting the substrate and thus cracks may be avoided. Accordingly, products may be stably produced. | 10-18-2012 |
20130122664 | METHOD OF MANUFACTURING SUBSTRATE INCLUDING THIN FILM TRANSISTOR - A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes. | 05-16-2013 |
20140045305 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening. | 02-13-2014 |
20140353627 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a first substrate, an anode electrode, a pixel defining layer, an organic light emitting layer, a multi-layered complex, a passivation insulating layer and a second substrate. The anode electrode is disposed on the first substrate. The pixel defining layer is disposed on the first substrate and defines a display region and a peripheral region thereon. The organic light emitting layer is disposed on and covers the anode electrode and the pixel defining layer, and is configured to generate light. The multi-layered complex is disposed on and covers the organic light emitting layer, and is configured to apply a current to the organic light emitting layer. The multi-layered complex includes a plurality of conducting layers laminated to each other. The passivation insulating layer is disposed on and covers the multi-layered complex. The second substrate is disposed on the passivation insulating layer and corresponds to the first substrate. | 12-04-2014 |